公开(公告)号：US20110109861A1

公开(公告)日：2011-05-12

申请号：US12831793

申请日：2010-07-07

申请人： Ock Soo Son ,  Won Hee Lee ,  Soo Young Choi ,  Dong Hae Suh

发明人： Ock Soo Son ,  Won Hee Lee ,  Soo Young Choi ,  Dong Hae Suh

IPC分类号： G02F1/1343 ,  H01L33/60

CPC分类号： G02F1/136209 ,  G02F1/133707 ,  G02F2001/134372 ,  G02F2203/02

摘要： Provided is a liquid crystal display including a transparent pixel electrode and a transparent common electrode in a pixel region to drive liquid crystals. The transparent common electrode includes a plurality of slits and is configured to open at least a portion of a switching device to connect unit pixels, the slits have an angle of 5 to 10° with respect to a gate line, and a rubbing direction of a liquid crystal layer is substantially parallel to a gate direction. Therefore, it is possible to provide the liquid crystal display capable of removing factors decreasing an aperture ratio, preventing light from leaking, and further improving internal reflection.

摘要翻译： 提供一种在像素区域中包括透明像素电极和透明公共电极以驱动液晶的液晶显示器。 透明公共电极包括多个狭缝，并且被配置为打开开关装置的至少一部分以连接单位像素，所述狭缝相对于栅极线具有5至10°的角度，并且 液晶层基本上平行于栅极方向。 因此，可以提供能够去除降低开口率的因素的液晶显示器，防止光泄漏，并进一步改善内部反射。

公开(公告)号：US20100311249A1

公开(公告)日：2010-12-09

申请号：US12794756

申请日：2010-06-06

申请人： JOHN M. WHITE ,  Carl Sorensen ,  Robin Tiner ,  Beom Soo Park ,  Soo Young Choi

发明人： JOHN M. WHITE ,  Carl Sorensen ,  Robin Tiner ,  Beom Soo Park ,  Soo Young Choi

IPC分类号： H01L21/46 ,  C23C16/455 ,  C23C16/00 ,  C23C16/513 ,  C23C16/30 ,  C23C14/00 ,  H05H1/24 ,  C23C16/56

CPC分类号： C23C16/45565 ,  C23C16/45591 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449

摘要： Embodiments of the disclosure generally provide a method and apparatus for processing a substrate in a vacuum process chamber. In one embodiment a vacuum process chamber is provided that includes a chamber body and lid disposed on the chamber body. A blocker plate is coupled to the lid and bounds a staging plenum therewith. A gas distribution plate is coupled to the lid. The gas distribution plate separates a main plenum defined between the gas distribution plate and the blocker plate from a process volume defined within the chamber body. The gas distribution plate and the blocker plate define a spacing gradient therebetween which influences mixing of gases within the main plenum.

摘要翻译： 本公开的实施例通常提供用于在真空处理室中处理衬底的方法和装置。 在一个实施例中，提供真空处理室，其包括设置在室主体上的室主体和盖。 阻挡板联接到盖子并且与其分隔起来。 气体分配板联接到盖子上。 气体分配板将限定在气体分配板和阻挡板之间的主增压室与室主体内限定的过程体积分开。 气体分配板和阻挡板限定了它们之间的间隔梯度，其影响主增压室内气体的混合。

公开(公告)号：US20100196626A1

公开(公告)日：2010-08-05

申请号：US12700484

申请日：2010-02-04

申请人： Soo Young Choi ,  Robin L. Tiner ,  Shinichi Kurita ,  John M. White ,  Carl A. Sorensen ,  Jeffrey A. Kho ,  Suhail Anwar ,  Makoto Inagawa ,  Gaku Furuta

发明人： Soo Young Choi ,  Robin L. Tiner ,  Shinichi Kurita ,  John M. White ,  Carl A. Sorensen ,  Jeffrey A. Kho ,  Suhail Anwar ,  Makoto Inagawa ,  Gaku Furuta

IPC分类号： C23C16/509

CPC分类号： C23C16/5096 ,  C23C16/4585 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32568 ,  H01L21/67069

摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.

摘要翻译： 描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。 该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。 该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径，耦合到腔室的底部的RF器件和 电极或其组合。

公开(公告)号：US20100184290A1

公开(公告)日：2010-07-22

申请号：US12686483

申请日：2010-01-13

申请人： Sam H. Kim ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

发明人： Sam H. Kim ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

IPC分类号： H01L21/28

CPC分类号： H01L21/68742 ,  H01L21/6831

摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.

摘要翻译： 本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。 当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。 气袋可导致基板上的不均匀沉积。 因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。 在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。 通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

公开(公告)号：US20100151688A1

公开(公告)日：2010-06-17

申请号：US12634921

申请日：2009-12-10

申请人： Young Jin Choi ,  Gaku Furuta ,  Soo Young Choi ,  Beom Soo Park

发明人： Young Jin Choi ,  Gaku Furuta ,  Soo Young Choi ,  Beom Soo Park

IPC分类号： H01L21/3065 ,  H01L21/302

CPC分类号： C23C16/4583 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32733 ,  H01L21/68742

摘要： Embodiments disclosed herein generally include methods of ensuring uniform deposition on a substrate. The smallest gap between a portion of the substrate and the substrate support upon which the substrate rests may lead to uneven deposition of material or ‘thin spots’ on the substrate. Large area substrates, due to their size, are susceptible to numerous gaps at random locations. By inducing an electrostatic charge on the substrate prior to placing the substrate onto the substrate support, the substrate may be placed generally flush against the substrate support. The electrostatic charge on the substrate creates an attraction between the substrate and substrate support to pull substantially the entire surface of the substrate into contact with the substrate support. Material may then be substantially uniformly deposited on the substrate while reducing ‘thin spots’.

摘要翻译： 本文公开的实施例通常包括确保在基底上均匀沉积的方法。 衬底的一部分和衬底支撑物之间的最小间隙可能导致材料的不均匀沉积或衬底上的“薄点”。 由于其大尺寸，大面积基板在随机位置易受许多间隙的影响。 通过在将衬底放置在衬底支撑件上之前在衬底上引起静电电荷，衬底可以放置在与衬底支撑件相对齐齐的位置。 衬底上的静电电荷在衬底和衬底支撑件之间产生吸引力，以基本上将衬底的整个表面拉到与衬底支撑件接触。 然后可以将材料基本均匀地沉积在衬底上，同时减少“薄点”。

公开(公告)号：US20090315030A1

公开(公告)日：2009-12-24

申请号：US12486435

申请日：2009-06-17

申请人： Soo Young Choi ,  Jriyan Jerry Chen ,  Tae Kyung Won ,  Dong-Kil Yim

发明人： Soo Young Choi ,  Jriyan Jerry Chen ,  Tae Kyung Won ,  Dong-Kil Yim

IPC分类号： H01L31/0376 ,  H01L21/20 ,  H01L31/18

CPC分类号： H01L21/02532 ,  G02F1/1362 ,  G02F2001/13312 ,  G02F2201/58 ,  G06F3/0412 ,  G06F3/0421 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/0262 ,  H01L27/1214 ,  H01L27/1446 ,  H01L31/022466 ,  H01L31/03762 ,  H01L31/153 ,  H01L31/202 ,  Y02E10/548

摘要： Embodiments of the present invention relate to methods for depositing an amorphous film that may be suitable for using in a NIP photodiode in display applications. In one embodiment, the method includes providing a substrate into a deposition chamber, supplying a gas mixture having a hydrogen gas to silane gas ratio by volume greater than 4 into the deposition chamber, maintaining a pressure of the gas mixture at greater than about 1 Torr in the deposition chamber, and forming an amorphous silicon film on the substrate in the presence of the gas mixture, wherein the amorphous silicon film is configured to be an intrinsic-type layer in a photodiode sensor.

摘要翻译： 本发明的实施例涉及用于沉积非晶膜的方法，所述方法适用于显示器应用中的NIP光电二极管。 在一个实施例中，该方法包括将衬底提供到沉积室中，将具有氢气的硅烷气体比例大于4的硅烷气体的气体混合物供应到沉积室中，将气体混合物的压力保持在大于约1托 在所述沉积室中，并且在所述气体混合物的存在下在所述衬底上形成非晶硅膜，其中所述非晶硅膜被配置为光电二极管传感器中的本征型层。

公开(公告)号：US20090238734A1

公开(公告)日：2009-09-24

申请号：US12407766

申请日：2009-03-19

申请人： Gaku Furuta ,  David Atchley ,  Soo Young Choi ,  John M. White

发明人： Gaku Furuta ,  David Atchley ,  Soo Young Choi ,  John M. White

IPC分类号： B01J19/08 ,  B21B23/00

CPC分类号： C23C16/4581

摘要： The present invention generally provides apparatus for supporting a large area substrate in a plasma reactor. One embodiment, a substrate support for using in a plasma reactor includes an electrically conductive body has a top surface with a plurality of roll-formed indents.

摘要翻译： 本发明通常提供用于在等离子体反应器中支撑大面积基板的装置。 一个实施例中，用于在等离子体反应器中使用的衬底支撑件包括导电体，其具有具有多个辊形凹口的顶表面。

公开(公告)号：US07514936B2

公开(公告)日：2009-04-07

申请号：US11925893

申请日：2007-10-27

申请人： Suhail Anwar ,  Remegio Manacio ,  Chung-Hee Park ,  Dong-Kil Yim ,  Soo Young Choi

发明人： Suhail Anwar ,  Remegio Manacio ,  Chung-Hee Park ,  Dong-Kil Yim ,  Soo Young Choi

IPC分类号： G01N27/62

CPC分类号： G01R31/1254

摘要： Method and apparatus for detecting or suppressing electrical arcing or other abnormal change in the electrical impedance of a load connected to a power source. Preferably the load is a plasma chamber used for manufacturing electronic components such as semiconductors and flat panel displays. Arcing is detected by monitoring one or more sensors. Each sensor either responds to a characteristic of the electrical power being supplied by an electrical power source to the plasma or is coupled to the plasma chamber so as to respond to an electromagnetic condition within the chamber. Arcing is suppressed by reducing the power output for a brief period. Then the power source increases its power output, preferably to its original value. If the arcing resumes, the power source repeats the steps of reducing and then restoring the power output.

摘要翻译： 用于检测或抑制连接到电源的负载的电阻抗的电弧或其他异常变化的方法和装置。 优选地，负载是用于制造诸如半导体和平板显示器的电子部件的等离子体室。 通过监视一个或多个传感器来检测电弧。 每个传感器或者响应于由电源提供给等离子体的电力的特性，或者耦合到等离子体室，以便对室内的电磁条件作出响应。 通过在短时间内减少功率输出来抑制电弧。 然后电源增加其功率输出，最好提高到其原始值。 如果电弧恢复，则电源重复减少然后恢复功率输出的步骤。

公开(公告)号：US20090000551A1

公开(公告)日：2009-01-01

申请号：US12204717

申请日：2008-09-04

申请人： Soo Young Choi ,  Tae Kyung Won ,  John M. White

发明人： Soo Young Choi ,  Tae Kyung Won ,  John M. White

IPC分类号： C23C16/54

CPC分类号： C23C16/24 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32449

摘要： Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes.

摘要翻译： 提供了具有由气体分配板产生的流动梯度的方法和装置。 在一个实施例中，该方法和装置特别适用于但不限于沉积太阳能电池应用的硅膜。 用于沉积用于太阳能电池应用的均匀膜的设备包括处理室和设置在处理室中的四边形气体分配板，并且具有由四个侧面分开的至少四个角。 气体分配板还包括通过气体分配板形成的第一多个扼流圈，位于角部的第一多个扼流圈，以及通过气体分配板形成的第二多个扼流圈，沿着侧面设置的第二多个扼流圈 在所述角区域之间的所述气体分配板中，所述第一多个扼流器具有比所述第二多个扼流圈更大的流动阻力。

公开(公告)号：US20080268175A1

公开(公告)日：2008-10-30

申请号：US12082554

申请日：2008-04-11

申请人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

发明人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

IPC分类号： C23C16/448

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/5096 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/3185 ,  H01L29/4908 ,  H01L29/66765

摘要： We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4/NH3/N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.

摘要翻译： 我们已经发现，向包含SiH 4 N，NH 3和N 2的前体气体组合物中加入H 2 N 2， 在通过PECVD沉积在衬底上的a-SiN x H：H膜的衬底表面上改善湿蚀刻速率和湿蚀刻速率均匀性是有效的。 湿蚀刻速率是膜密度的指示。 通常，湿蚀刻速率越低，膜越致密。 向SiH 4 N 3 / NH 3 / N 2 N前体气体组合物中加入H 2 O没有显着增加 衬底表面沉积膜厚度的变化。 跨过衬底的膜的均匀性使得能够生产具有25,000cm 2以上的表面积的平板显示器。