公开(公告)号：US08664688B2

公开(公告)日：2014-03-04

申请号：US12659911

申请日：2010-03-25

申请人： Takeshi Kamikawa ,  Masataka Ohta

发明人： Takeshi Kamikawa ,  Masataka Ohta

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/028 ,  H01S5/168 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/4031 ,  H01S2304/04

摘要： A nitride semiconductor light-emitting chip offers enhanced luminous efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip (nitride semiconductor light-emitting chip) has a nitride semiconductor substrate having a principal growth plane, and nitride semiconductor layers grown on the principal growth plane of the nitride semiconductor substrate. The principal growth plane of the GaN substrate is a plane having off-angles in both the a- and c-axis directions relative to an m plane, and the off-angle in the a-axis direction is larger than the off-angle in the c-axis direction.

摘要翻译： 氮化物半导体发光芯片由于改善的EL发射图案而提供增强的发光效率。 氮化物半导体激光器芯片（氮化物半导体发光芯片）具有主氮化物半导体衬底，其具有主生长面，氮化物半导体层在氮化物半导体衬底的主生长面上生长。 GaN衬底的主生长平面是在a轴和c轴方向上相对于m平面具有偏角的平面，并且在a轴方向上的偏离角大于偏离角度 c轴方向。

公开(公告)号：US20130161640A1

公开(公告)日：2013-06-27

申请号：US13727082

申请日：2012-12-26

申请人： Eiji Yamada ,  Takeshi Kamikawa ,  Masahiro Araki

发明人： Eiji Yamada ,  Takeshi Kamikawa ,  Masahiro Araki

IPC分类号： H01L29/06

CPC分类号： H01S5/32341 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32

摘要： A nitride semiconductor device is provided that prevents development of cracks, that has nitride semiconductor thin films with uniform thicknesses and good growth surface flatness, and is thus consistent in characteristics, and that can be fabricated at a satisfactory yield. In this nitride semiconductor device, the nitride semiconductor thin films are grown on a substrate having an off-angle between a direction normal to the surface of ridges and the crystal direction . This helps either reduce or intentionally promote diffusion or movement of the atoms or molecules of a source material of the nitride semiconductor thin films through migration thereof. As a result, a nitride semiconductor growth layer with good surface flatness can be formed, and thus a nitride semiconductor device with satisfactory characteristics can be obtained.

摘要翻译： 提供了防止具有均匀厚度的氮化物半导体薄膜和良好的生长面平坦度的裂纹的发展的氮化物半导体装置，因此具有一致的特性，并且可以以令人满意的产量制造。 在这种氮化物半导体器件中，氮化物半导体薄膜在垂直于脊表面的方向与晶体方向<0001>之间具有偏角的衬底上生长。 这有助于通过其移动来减少或有意地促进氮化物半导体薄膜的源材料的原子或分子的扩散或移动。 结果，可以形成具有良好表面平坦度的氮化物半导体生长层，因此可以获得具有令人满意的特性的氮化物半导体器件。

公开(公告)号：US20130043499A1

公开(公告)日：2013-02-21

申请号：US13572178

申请日：2012-08-10

申请人： Masataka Ohta ,  Takeshi Kamikawa

发明人： Masataka Ohta ,  Takeshi Kamikawa

IPC分类号： H01L33/60

CPC分类号： H01L33/483 ,  H01L33/507 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

摘要： A semiconductor light-emitting device (A) having a simple configuration whereby it is possible to easily and accurately confirm whether or not ultraviolet light is being emitted, the semiconductor light-emitting device comprising: a semiconductor light-emitting element (1) for emitting ultraviolet light in an ultraviolet or deep ultraviolet region; a cap part (6) having a through-hole (63) in the top part through which ultraviolet light passes and encircling the semiconductor light-emitting element (1); a translucent cover (7) for transmitting ultraviolet light, the translucent cover being disposed so as to hermetically close up the through-hole (63); and a UV-excited phosphor (8) which is excited by ultraviolet light and which emits visible light, the UV-excited phosphor being disposed inside the cap part (6).

摘要翻译： 一种半导体发光装置（A），其具有简单的结构，由此可以容易且准确地确认是否发出紫外线，该半导体发光装置包括：用于发射的半导体发光元件（1） 在紫外线或深紫外线区域的紫外线; 帽部分（6），其在所述顶部部分中具有通孔（63），紫外线穿过所述通孔（63）并围绕所述半导体发光元件（1）; 用于透射紫外光的半透明盖（7），所述半透明盖设置成气密地关闭通孔（63）; 和紫外线激发的荧光体（8），所述紫外线激发的荧光体被紫外线激发并发出可见光，所述紫外线激发荧光体设置在所述帽部（6）的内部。

公开(公告)号：US20130038938A1

公开(公告)日：2013-02-14

申请号：US13548756

申请日：2012-07-13

申请人： Toshiyuki Kawakami ,  Takeshi Kamikawa

发明人： Toshiyuki Kawakami ,  Takeshi Kamikawa

IPC分类号： G02B5/28 ,  H01S5/02 ,  G02B1/10

CPC分类号： G02B27/0006 ,  G02B1/10 ,  G02B1/105 ,  H01S5/005 ,  H01S5/02296 ,  H01S5/028 ,  H01S5/0282

摘要： An optical component emits or transmits laser light of a wavelength of 460 nm or less, and a first coating formed from a dielectric film is applied upon at least a part of the surface thereof, and a second coating B formed from a dielectric film containing a noble metal or platinum group element is applied upon the first coating.

摘要翻译： 光学部件发射或透射波长为460nm以下的激光，并且在其表面的至少一部分上施加由电介质膜形成的第一涂层，并且将第二涂层B由包含 贵金属或铂族元素在第一次涂覆时施加。

公开(公告)号：US08367441B2

公开(公告)日：2013-02-05

申请号：US13200357

申请日：2011-09-23

申请人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

发明人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

IPC分类号： H01L21/00

CPC分类号： H01L29/7787 ,  B82Y20/00 ,  H01L29/2003 ,  H01L29/7786 ,  H01L33/44 ,  H01S5/028 ,  H01S5/22 ,  H01S5/34333

摘要： Example embodiments herein relate to a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminum nitride crystal or an aluminum oxynitride crystal.

摘要翻译： 本发明的实施例涉及包括形成在发光部分并且包括氮化铝晶体或氮氧化铝晶体的涂膜的氮化物半导体发光器件，以及制造氮化物半导体发光器件的方法。 还提供了一种氮化物半导体晶体管器件，其包括与氮化物半导体层接触并包括氮化铝晶体或氮氧化铝晶体的氮化物半导体层和栅极绝缘膜。

公开(公告)号：US08319235B2

公开(公告)日：2012-11-27

申请号：US11785981

申请日：2007-04-23

申请人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

发明人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/028 ,  H01S5/221 ,  H01S5/2231

摘要： A nitride semiconductor light-emitting device including a coating film and a reflectance control film successively formed on a light-emitting portion, in which the light-emitting portion is formed of a nitride semiconductor, the coating film is formed of an aluminum oxynitride film or an aluminum nitride film, and the reflectance control film is formed of an oxide film, as well as a method of manufacturing the nitride semiconductor light-emitting device are provided.

摘要翻译： 一种氮化物半导体发光器件，包括依次形成在发光部分上的发光部分的涂覆膜和反射控制膜，其中发光部分由氮化物半导体形成，所述涂膜由氮氧化铝膜或 氮化铝膜，反射率控制膜由氧化膜形成，以及制造氮化物半导体发光器件的方法。

公开(公告)号：US07968898B2

公开(公告)日：2011-06-28

申请号：US11713761

申请日：2007-03-05

申请人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

发明人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

IPC分类号： H01L33/00

CPC分类号： H01L29/7787 ,  B82Y20/00 ,  H01L29/2003 ,  H01L29/7786 ,  H01L33/44 ,  H01S5/028 ,  H01S5/22 ,  H01S5/34333

摘要： Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminium nitride crystal or an aluminum oxynitride crystal.

摘要翻译： 提供了一种氮化物半导体发光器件，其包括形成在发光部分并且包括氮化铝晶体或氮氧化铝晶体的涂膜，以及制造氮化物半导体发光器件的方法。 还提供了一种氮化物半导体晶体管器件，其包括与氮化物半导体层接触并包括氮化铝晶体或氮氧化铝晶体的氮化物半导体层和栅极绝缘膜。

公开(公告)号：US20110042646A1

公开(公告)日：2011-02-24

申请号：US12805848

申请日：2010-08-20

申请人： Masataka Ohta ,  Takeshi Kamikawa

发明人： Masataka Ohta ,  Takeshi Kamikawa

IPC分类号： H01L29/12 ,  H01L29/20 ,  H01L21/20

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/16152 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0217 ,  H01S5/02212 ,  H01S5/028 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3407 ,  H01S2304/04 ,  H01L2924/00014

摘要： A nitride semiconductor chip allows enhancement of luminous efficacy. The nitride semiconductor laser chip (nitride semiconductor chip) has a GaN substrate, which has a principal growth plane, and an active layer, which is formed on the principal growth plane of the GaN substrate and which has a quantum well structure including a well layer and a barrier layer. The principal growth plane is a plane having an off angle in the a-axis direction relative to the m plane. The barrier layer is formed of AlGaN, which is a nitride semiconductor containing Al.

摘要翻译： 氮化物半导体芯片可以提高发光效率。 氮化物半导体激光器芯片（氮化物半导体芯片）具有主要生长面的GaN衬底和形成在GaN衬底的主生长平面上并且具有包括阱层的量子阱结构的有源层 和阻挡层。 主生长面是相对于m面在a轴方向上具有偏角的平面。 阻挡层由AlGaN构成，AlGaN是含有Al的氮化物半导体。

公开(公告)号：US20110007770A1

公开(公告)日：2011-01-13

申请号：US12923334

申请日：2010-09-15

申请人： Masahumi Kondou ,  Takeshi Kamikawa ,  Yoshinobu Kawaguchi

发明人： Masahumi Kondou ,  Takeshi Kamikawa ,  Yoshinobu Kawaguchi

IPC分类号： H01S5/323

CPC分类号： H01S5/028 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/0281 ,  H01S5/0282 ,  H01S5/2231 ,  H01S5/34333

摘要： An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.

摘要翻译： 在具有氮化物III-V族化合物半导体层的氮化物半导体激光棒的光谐振器的面上放置六方晶的粘附层，并且在该粘合层上铺设小面涂层。 以这种方式，获得其中将小面涂层铺设在粘合层上的结构。

公开(公告)号：US07692200B2

公开(公告)日：2010-04-06

申请号：US12314062

申请日：2008-12-03

申请人： Takeshi Kamikawa ,  Yoshika Kaneko ,  Kensaku Motoki

发明人： Takeshi Kamikawa ,  Yoshika Kaneko ,  Kensaku Motoki

IPC分类号： H01L33/00

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02636 ,  H01S5/2201 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconductor layer or substrate has a trench region deeper than the low defect density region. Thus by digging the trench in the defect concentration region, the growth detection is uniformized, and the surface planarity is improved. The uniformity of the characteristic in the wafer surface leads to improvement of the yield.