摘要:
When an obstacle on either of the two sides of a vehicle is detected, the future position of the vehicle after a prescribed time is predicted. When the future predicted vehicle position reaches a prescribed lateral position in the width direction of the lane, control start is determined such that obstacle avoiding control is carried out to prevent the approach of the vehicle to the obstacle. When an intention of the driver to enter the lane of the obstacle is detected, the start timing for obstacle avoiding control is shortened.
摘要:
The present invention provides a solid-state imaging device including a pad capable of reducing inferior connection with an external terminal. The solid-state imaging device includes a first substrate provided, on its front face, with photoelectric conversion elements, a first wiring structure, a second substrate provided, on its front face, with at least a part of peripheral circuits, and a second wiring structure. The first substrate, the first wiring structure, the second wiring structure, and the second substrate are provided in this order. The first wiring structure includes a wiring layer including wirings made mainly of copper. The second wiring structure includes a wiring layer including wirings made mainly of copper. Wirings made mainly of copper in the wiring layer in the first wiring structure are bonded with wirings made mainly of copper in the wiring layer in the second wiring structure. The solid-state imaging device includes a pad formed of a conductive element made mainly of aluminum.
摘要:
One of disclosed embodiments provides a photoelectric conversion device, comprising a member including a first surface configured to receive light, and a second surface opposite to the first surface, and a plurality of photoelectric conversion portions aligned inside the member in a depth direction from the first surface, wherein at least one of the plurality of photoelectric conversion portions other than the photoelectric conversion portion positioned closest to the first surface includes, on a boundary surface thereof with the member, unevenness having a difference in level larger than a difference in level of unevenness of the photoelectric conversion portion positioned closest to the first surface, and wherein the boundary surface having the unevenness is configured to localize or resonate light incident on the member from a side of the first surface around the boundary surface having the unevenness.
摘要:
A solid-state image pickup device according to the present invention is a backside-illuminated solid-state image pickup device that includes a plurality of pixels each having a photoelectric conversion portion. A p-type semiconductor region 110 in which holes are collected is disposed on the front side of a PD substrate 101. An n-type semiconductor region 119 is disposed below the p-type semiconductor region 110 on the back side of the PD substrate 101. The n-type semiconductor region 119 contains arsenic as a principal impurity. The photoelectric conversion portion includes the p-type semiconductor region 110 and the n-type semiconductor region 119.
摘要:
An inkjet printing apparatus which enables printing with high print quality is provided. For that purpose, a pair of airflow guides are provided at intermediate positions between each adjacent two of the printing heads arrayed in a travelling direction of a carriage, the pair of the airflow guides respectively located right and left in a direction perpendicular to the travelling direction of the carriage.
摘要:
A solid-state imaging apparatus comprises first accumulation units, of which number is n, holding a digital value of n-bits output from a counter, second accumulation units, of which number is n, holding the digital value of n-bits transferred from the first accumulation units, of which number is n, and an A/D converter writing the digital value of n-bits from the counter based on an image signal generated by pixels into the first accumulation units, of which number is n, wherein correspondingly to each column of the pixels, the first accumulation unit of m-th bit (1≦m≦n) and the second accumulation unit of m-th bit (1≦m≦n) are arranged and paired, and the pairs of which number is n are arranged in a direction along the column of pixels.
摘要:
In the case that a vehicle 1 is making a reverse movement, a control section 4 sets a braking control operation distance according to an angle formed by the vehicle 1's proceeding direction and an extending direction of a road on which an approaching vehicle is traveling. With this, a braking control is implemented at a delayed timing in a scene where the following possibility is high: the driver wishes to end the reverse movement operation as early as possible when a space for allowing the approaching vehicle to pass by is not present at the back of the vehicle 1. Thereby, the cumbersomeness or discomfort which may be felt by the driver with respect to the braking control can be decreased.
摘要:
A photoelectric conversion apparatus includes a plurality of photoelectric conversion elements configured to convert incident light to electric carriers, an amplifier MOS transistor shared by the plurality of photoelectric conversion elements, a plurality of floating diffusions connected to the gate electrode of the amplifier MOS transistor, and a plurality of transfer MOS transistors arranged corresponding to the respective photoelectric conversion elements, each of the transfer MOS transistors transferring electric carriers from corresponding one of the photoelectric conversion elements to corresponding one of the floating diffusions. In such a photoelectric conversion apparatus, at least two of the floating diffusions are electrically connected to each other with a wiring line included in the same wiring layer as the gate electrode of the amplifier MOS transistor.
摘要:
A solid-state imaging apparatus, controlling a potential on a semiconductor substrate for an electronic shutter operation, includes: a first semiconductor region of the first conductivity type for forming a photoelectric conversion region; a second semiconductor region of the first conductivity type, formed separately from the photoelectric conversion region, for accumulating carriers; a third semiconductor region of a second conductivity type arranged under the second semiconductor region, for operating as a potential barrier; a fourth semiconductor region of the second conductivity type extending between the first semiconductor region and the semiconductor substrate, and between the third semiconductor region and the semiconductor substrate; and a first voltage supply portion for supplying a voltage to the third semiconductor region; wherein the first voltage supply portion includes a fifth semiconductor region of the second conductivity type arranged in the pixel region, and a first electrode connected to the fifth semiconductor region.
摘要:
A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion.