公开(公告)号：US07968864B2

公开(公告)日：2011-06-28

申请号：US12390036

申请日：2009-02-20

申请人： Katsushi Akita ,  Hitoshi Kasai ,  Takashi Kyono ,  Kensaku Motoki

发明人： Katsushi Akita ,  Hitoshi Kasai ,  Takashi Kyono ,  Kensaku Motoki

IPC分类号： H01L29/74 ,  H01L31/111

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/32 ,  H01S5/34333

摘要： A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well structure is formed in such a way as to have an emission peak wavelength of 410 nm or more. The thickness of a well layer is 4 nm or more, and 10 nm or less. The well layer is composed of InXGa1-XN (0.15≦X

摘要翻译： 提供III族氮化物发光器件。 具有量子阱结构的有源层在氮化镓基半导体区域的基底面上生长。 量子阱结构形成为具有410nm以上的发光峰值波长。 阱层的厚度为4nm以上，10nm以下。 阱层由InXGa1-XN（0.15＆nlE; X <1，其中X是应变组成）组成。 氮化镓基半导体区域的基面相对于六边形系统的{0001}面或{000-1}面以15度以上且85度以下的倾斜角度倾斜 III族氮化物。 该范围内的基面是半极性平面。

公开(公告)号：US07943943B2

公开(公告)日：2011-05-17

申请号：US11818024

申请日：2007-06-12

申请人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

发明人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32

摘要： To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.

摘要翻译： 为了提供使用可以通过高效发光获得高功率发光的氮化物半导体的发光器件及其制造方法，该发光器件包括GaN衬底和包括InAlGaN四元合金的发光层 在GaN衬底的第一主表面的一侧。

公开(公告)号：US07687822B2

公开(公告)日：2010-03-30

申请号：US11727425

申请日：2007-03-27

申请人： Youichi Nagai ,  Makoto Kiyama ,  Takao Nakamura ,  Takashi Sakurada ,  Katsushi Akita ,  Koji Uematsu ,  Ayako Ikeda ,  Koji Katayama ,  Susumu Yoshimoto

发明人： Youichi Nagai ,  Makoto Kiyama ,  Takao Nakamura ,  Takashi Sakurada ,  Katsushi Akita ,  Koji Uematsu ,  Ayako Ikeda ,  Koji Katayama ,  Susumu Yoshimoto

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/20 ,  H01L33/382 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2924/2076 ,  H01L2224/05599 ,  H01L2924/00011 ,  H01L2224/45099

摘要： In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.

摘要翻译： 为了提供具有简单结构并因此可以容易地制造并且可以长期稳定地提供高发光效率的发光器件，发光器件在第一主表面侧包括n型氮化物半导体层 的氮化物半导体衬底，比在第一主表面侧的n型氮化物半导体层更远离氮化物半导体衬底设置的p型氮化物半导体层，以及放置在n型氮化物半导体层和 在第一主表面侧的p型氮化物半导体层。 氮化物半导体衬底的电阻率为0.5Ω·cm·cm·cm以下，p型氮化物半导体层一侧被下降，使得从氮化物半导体衬底的第二主表面与第一 主表面。

公开(公告)号：US20090026440A1

公开(公告)日：2009-01-29

申请号：US11659002

申请日：2006-04-25

申请人： Takashi Kyono ,  Katsushi Akita ,  Hideki Hirayama

发明人： Takashi Kyono ,  Katsushi Akita ,  Hideki Hirayama

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/06

摘要： A nitride semiconductor light-emitting element 11 is one for generating light containing a wavelength component in an ultraviolet region. The nitride semiconductor light-emitting element 11 has an active region 17 including InX1AlY1Ga1-X1-Y1N well layers 13 (1>X1>0 and 1>Y1>0) and InX2AlY2Ga1-X2-Y2N barrier layers 15 (1>X2>0 and 1>Y2>0). An energy gap difference Eg1 between the InX1AlY1Ga1-X1-Y1N well layers 13 and the InX2AlY2Ga1-X2-Y2N barrier layers 15 is not less than 2.4×10−20 J nor more than 4.8×10−20 J.

摘要翻译： 氮化物半导体发光元件11是用于产生包含紫外线区域中的波长分量的光的氮化物半导体发光元件。 氮化物半导体发光元件11具有InX1AlY1Ga1-X1-Y1N阱层13（1> X1> 0和Y1> Y1> 0）和InX2AlY2Ga1-X2-Y2N势垒层15（1> X2> 0）的有源区17 和1> Y2> 0）。 InX1AlY1Ga1-X1-Y1N阱层13和InX2AlY2Ga1-X2-Y2N势垒层15之间的能隙差Eg1不小于2.4×10-20J，也不大于4.8×10-20JJ。

公开(公告)号：US20080076199A1

公开(公告)日：2008-03-27

申请号：US11979873

申请日：2007-11-09

申请人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

发明人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06

摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGAN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.

摘要翻译： 半导体光产生装置包括发光区域3，第一Al 1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5和第二层 Al x X2 Ga 1-X2 N半导体（0 <= X2 <= 1）层7.在该半导体光产生装置中，光产生区3由III 氮化物半导体，并且包括InAlGAN半导体层。 第一Al X1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5掺杂有诸如镁的p型掺杂剂，并且是 设置在发光区域3上。第二Al X2 X2 Ga 1-X2 N半导体层7的p型浓度比第一Al X1 < 第一Al 2 N 2 Ga 1-X 2 N半导体（0 <= X2 <= 1 / 1）层7设置在发光区域3和第一Al 1 N 1 Ga 1-X1 N半导体层5之间。

公开(公告)号：US07294867B2

公开(公告)日：2007-11-13

申请号：US11032230

申请日：2005-01-11

申请人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

发明人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

IPC分类号： H01L33/00 ,  H01L29/24

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06

摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGaN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.

摘要翻译： 半导体光产生装置包括发光区域3，第一Al X1 X 1 Ga 1-X1 N半导体（0 <= X 1 <= 1）层5和 第二Al x X2 Ga 1-X2 N半导体（0 <= X 2 <= 1）层7。 在该半导体发光元件中，发光区域3由III族氮化物半导体构成，具有InAlGaN半导体层。 第一Al X1 X1＆lt; 1-X1＆gt; N半导体（0 <= X 1 <= 1）层5掺杂有诸如镁的p型掺杂剂，以及 设置在发光区域3上。 第二Al X2 X2 Ga 1-X2 N半导体层7的p型浓度比第一Al X1 Ga 1 -X1 N半导体层5。 第二Al X2 X2 Ga 1-X2 N半导体（0 <= X 2 <= 1）层7设置在发光区3和第一Al _{X1 1-X1 N半导体层5。}

公开(公告)号：US09129808B2

公开(公告)日：2015-09-08

申请号：US13583179

申请日：2011-10-03

申请人： Kei Fujii ,  Katsushi Akita ,  Takashi Ishizuka

发明人： Kei Fujii ,  Katsushi Akita ,  Takashi Ishizuka

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  H01L21/02 ,  C30B25/18 ,  C30B29/40 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/18 ,  B82Y20/00

CPC分类号： H01L21/0262 ,  B82Y20/00 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02387 ,  H01L21/02392 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02549 ,  H01L31/035236 ,  H01L31/105 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： Provided are an epitaxial wafer, a photodiode, and the like that include an antimony-containing layer and can be efficiently produced such that protruding surface defects causing a decrease in the yield can be reduced and impurity contamination causing degradation of the performance can be suppressed.The production method includes a step of growing an antimony (Sb)-containing layer on a substrate 1 by metal-organic vapor phase epitaxy using only metal-organic sources; and a step of growing, on the antimony-containing layer, an antimony-free layer including a window layer 5, wherein, from the growth of the antimony-containing layer to completion of the growth of the window layer, the growth is performed at a growth temperature of 425° C. or more and 525° C. or less.

摘要翻译： 提供包括含锑层的外延晶片，光电二极管等，并且可以有效地制造，从而可以减少导致产率降低的突出表面缺陷，并且可以抑制导致性能下降的杂质污染。 该制造方法包括仅使用金属有机源的金属有机气相外延，在基板1上生长含锑（Sb）层的工序; 以及在含锑层上生长包含窗口层5的无锑层的步骤，其中，从含锑层的生长到窗口层的生长完成，生长在 生长温度为425℃以上且525℃以下。

公开(公告)号：US08822977B2

公开(公告)日：2014-09-02

申请号：US13806585

申请日：2011-06-15

申请人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Hideaki Nakahata ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

发明人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Hideaki Nakahata ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

IPC分类号： H01L29/06 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0304 ,  B82Y20/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/18 ,  H01L31/1844 ,  Y02E10/544

摘要： A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 μm and 2.0 μm. The ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6.

摘要翻译： 提供了一种光电检测器和制造该光检测器的方法，其中从包括1.3μm到长波长侧的短波长侧的近红外区域抑制了灵敏度的变化。 光检测器在InP衬底上包括II型多量子阱结构的吸收层，其包括GaAsSb层和InGaAs层的重复结构，并且在包括1.3μm和2.0μm的波长的近红外区域中具有灵敏度 。 在1.3μm波长下的灵敏度与2.0μm波长下的灵敏度之比不小于0.5但不大于1.6。

公开(公告)号：US20130313521A1

公开(公告)日：2013-11-28

申请号：US14000187

申请日：2012-02-03

申请人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

发明人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

IPC分类号： H01L31/0352

CPC分类号： H01L31/035209 ,  B82Y20/00 ,  C30B25/183 ,  C30B29/40 ,  C30B29/42 ,  C30B29/68 ,  H01L31/035236 ,  H01L31/109 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： An object of the present invention is to provide, for example, a photodiode that can have sufficiently high sensitivity in a near-infrared wavelength range of 1.5 μm to 1.8 μm and can have a low dark current. A photodiode (10) according to the present invention includes a buffer layer (2) positioned on and in contact with an InP substrate (1), and an absorption layer (3) positioned on and in contact with the buffer layer, wherein the absorption layer includes 50 or more pairs in which a first semiconductor layer 3a and a second semiconductor layer 3b constitute a single pair, the first semiconductor layer 3a having a bandgap energy of 0.73 eV or less, the second semiconductor layer 3b having a larger bandgap energy than the first semiconductor layer 3a, and the first semiconductor layer 3a and the second semiconductor layer 3b constitute a strain-compensated quantum well structure and each have a thickness of 1 nm or more and 10 nm or less.

摘要翻译： 本发明的一个目的是提供例如在1.5μm至1.8μm的近红外波长范围内具有足够高灵敏度的光电二极管，并且可以具有低暗电流。 根据本发明的光电二极管（10）包括位于InP衬底（1）上并与InP衬底（1）接触的缓冲层（2）和位于缓冲层上并与缓冲层接触的吸收层（3），其中吸收 层包括50个或更多对，其中第一半导体层3a和第二半导体层3b构成单对，第一半导体层3a的带隙能为0.73eV以下，第二半导体层3b的带隙能量比 第一半导体层3a，第一半导体层3a和第二半导体层3b构成应变补偿量子阱结构，并且各自具有1nm以上且10nm以下的厚度。

公开(公告)号：US08415180B2

公开(公告)日：2013-04-09

申请号：US13318039

申请日：2010-03-01

申请人： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Shinsuke Fujiwara ,  Hideaki Nakahata

发明人： Shin Hashimoto ,  Katsushi Akita ,  Kensaku Motoki ,  Shinsuke Fujiwara ,  Hideaki Nakahata

IPC分类号： H01L21/00

CPC分类号： C23C16/0227 ,  C23C16/0272 ,  C23C16/303 ,  C30B25/183 ,  C30B29/406 ,  H01L33/007

摘要： Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S105, a buffer layer 13 comprised of a Group III nitride such as GaN, AlGaN, or AlN is grown at 600 Celsius degrees on a primary surface 11a of a gallium oxide substrate 11. After the growth of the buffer layer 13, while supplying a gas G2, which contains hydrogen and nitrogen, into a growth reactor 10, the gallium oxide substrate 11 and the buffer layer 13 are exposed to an atmosphere in the growth reactor 11 at 1050 Celsius degrees. A Group III nitride semiconductor layer 15 is grown on the modified buffer layer. The modified buffer layer includes, for example, voids. The Group III nitride semiconductor layer 15 can be comprised of GaN and AlGaN. When the Group III nitride semiconductor layer 15 is formed of these materials, excellent crystal quality is obtained on the modified buffer layer 14.

摘要翻译： 本发明提供一种制造晶片产品的方法，该晶片产品包括在氧化镓衬底上生长的有源层并且能够提高发光强度。 在步骤S105中，在氧化镓衬底11的主表面11a上以600摄氏度生长由诸如GaN，AlGaN或AlN的III族氮化物构成的缓冲层13.在缓冲层13生长之后，同时 将含有氢和氮的气体G2供给到生长反应器10中，将氧化镓衬底11和缓冲层13在生长反应器11中的气氛中以1050摄氏度暴露。 在改性缓冲层上生长III族氮化物半导体层15。 改性缓冲层包括例如空隙。 III族氮化物半导体层15可以由GaN和AlGaN构成。 当由这些材料形成III族氮化物半导体层15时，在改性缓冲层14上获得优异的晶体质量。