公开(公告)号：US07411178B2

公开(公告)日：2008-08-12

申请号：US10913541

申请日：2004-08-09

Applicant: Haruyoshi Ono

Inventor： Haruyoshi Ono

IPC: H01J7/24 ,  G01J3/46

CPC classification number: G01J3/02 ,  G01J3/0256 ,  G01J3/0286 ,  G01J3/0291 ,  G01J9/00

Abstract: A wavelength measuring device includes: a light receiving element that receive light to be measured; a temperature controller that maintains the light receiving element at different temperatures; and a calculation unit that determines the wavelength of the light to be measured, based on the outputs of the light receiving elements.

Abstract translation: 波长测量装置包括：受光元件，其接收要测量的光; 温度控制器，其将光接收元件保持在不同的温度; 以及计算单元，其基于光接收元件的输出来确定待测光的波长。

公开(公告)号：US20080174357A1

公开(公告)日：2008-07-24

申请号：US12018420

申请日：2008-01-23

Applicant: Hajime MATSUDA

Inventor： Hajime MATSUDA

IPC: H03K17/687

CPC classification number: H03K17/102 ,  H01L29/4238 ,  H03K17/693 ,  H04B1/48

Abstract: A semiconductor device having a switch includes a first FET connected to a terminal and a second FET of a stage following that of the first FET. The gate width of the first FET is greater than that of the second FET. A sum of lengths of a source electrode and a drain electrode of the first FET in a direction perpendicular to the gate width of the first FET is smaller than a sum of lengths of a source electrode and a drain electrode of the second FET in a direction perpendicular to the gate width of the second FET.

Abstract translation: 具有开关的半导体器件包括连接到端子的第一FET和与第一FET相邻的阶段的第二FET。 第一FET的栅极宽度大于第二FET的栅极宽度。 在与第一FET的栅极宽度垂直的方向上，第一FET的源电极和漏电极的长度的和小于第二FET的源电极和漏极的长度方向的和 垂直于第二FET的栅极宽度。

公开(公告)号：US20080121934A1

公开(公告)日：2008-05-29

申请号：US11944953

申请日：2007-11-26

Applicant: Keita MATSUDA

Inventor： Keita MATSUDA

IPC: H01L29/778 ,  H01L21/338

CPC classification number: H01L29/2003 ,  H01L29/47 ,  H01L29/66462 ,  H01L29/66848 ,  H01L29/7786 ,  H01L29/812

Abstract: A semiconductor device includes: a nitride semiconductor layer including a channel layer, a Schottky electrode that contacts the nitride semiconductor layer and contains indium, and an ohmic electrode that contacts the channel layer. The nitride semiconductor layer includes a layer that contacts the Schottky electrode and contains AlGaN, InAlGaN or GaN. The Schottky electrode that contains indium includes one of an indium oxide layer and an indium tin oxide layer.

Abstract translation: 半导体器件包括：包括沟道层的氮化物半导体层，与氮化物半导体层接触并包含铟的肖特基电极和与沟道层接触的欧姆电极。 氮化物半导体层包括接触肖特基电极并含有AlGaN，InAlGaN或GaN的层。 包含铟的肖特基电极包括氧化铟层和氧化铟锡层中的一种。

公开(公告)号：US20080026497A1

公开(公告)日：2008-01-31

申请号：US11826085

申请日：2007-07-12

Applicant: Akira Furuya

Inventor： Akira Furuya

IPC: H01L21/00

CPC classification number: H01L33/0095 ,  H01L33/20 ,  H01L33/22

Abstract: A manufacturing method of a light-emitting element includes emitting a laser light to a division region for separating a light-emitting element formed on a substrate, physically dividing the substrate along the division region, and removing a surface layer on at least one of the side faces of the substrate that is exposed by the dividing of the substrate.

Abstract translation: 发光元件的制造方法包括将激光发射到用于分离形成在基板上的发光元件的分割区域，沿着分割区域物理地分割基板，以及去除至少一个 通过基板的分割曝光的基板的侧面。

公开(公告)号：US07316510B2

公开(公告)日：2008-01-08

申请号：US10895988

申请日：2004-07-22

Applicant: Haruyoshi Ono ,  Hidemitsu Sugawara

Inventor： Haruyoshi Ono ,  Hidemitsu Sugawara

IPC: G02B6/36

CPC classification number: G02B6/4237 ,  G02B6/4204 ,  G02B6/4225 ,  G02B6/4226

Abstract: An optical axis adjusting method for adjusting a tilt angle of an optical axis in two regions optically coupled in a holding member includes the steps of: roughly adjusting the optical axis by irradiating a first region on the holding member with a laser beam; and finely adjusting the optical axis by irradiating a second region on the holding member with a laser beam. One of the two regions is set as a reference point. The first region is located closer to the reference point, while the second region is located further from the reference point.

Abstract translation: 用于调节光学耦合在保持构件中的两个区域中的光轴的倾斜角的光轴调节方法包括以下步骤：通过用激光束照射保持构件上的第一区域来大致调节光轴; 并通过用激光束照射保持构件上的第二区域来微调光轴。 两个地区之一被设定为参考点。 第一区域更靠近参考点，而第二区域位于比参考点更远的位置。

公开(公告)号：US20070279823A1

公开(公告)日：2007-12-06

申请号：US11806331

申请日：2007-05-31

Applicant: Tsuneo Tokumitsu ,  Hideki Tango ,  Osamu Anegawa

Inventor： Tsuneo Tokumitsu ,  Hideki Tango ,  Osamu Anegawa

IPC: H02H1/00

CPC classification number: H01P5/028 ,  H01L2224/49175 ,  H01L2924/1423 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01P5/08 ,  H01L2924/00

Abstract: An electronic device includes a first transmission line, a second transmission line and a ground-coupling portion. The first transmission line is composed of a first signal line transmitting a given high frequency wave signal and a first ground. The second transmission line is composed of a second signal line transmitting the high frequency wave signal and a second ground. The ground-coupling portion couples the first ground and the second ground. A phase difference between the high frequency wave signals at both ends of the ground-coupling portion is substantially integral multiple of 180 degrees.

Abstract translation: 电子设备包括第一传输线，第二传输线和接地耦合部分。 第一传输线由发送给定高频波信号的第一信号线和第一接地组成。 第二传输线由传输高频波信号的第二信号线和第二接地组成。 接地耦合部分耦合第一接地和第二接地。 接地部分两端的高频波信号之间的相位差基本上是180度的整数倍。

公开(公告)号：US20070267653A1

公开(公告)日：2007-11-22

申请号：US11751292

申请日：2007-05-21

Applicant: Yoshihiro YONEDA ,  Yuji KOYAMA

Inventor： Yoshihiro YONEDA ,  Yuji KOYAMA

IPC: H01L31/00

CPC classification number: H01L31/1075 ,  H01L31/0304 ,  H01L31/03529 ,  Y02E10/544

Abstract: A semiconductor light-receiving device includes: a first conduction layer of a first conduction type; a light absorption layer provided on the first conduction layer; a multiplication layer provided on the light absorption layer; a window layer provided on the multiplication layer, the window layer being undoped or having the first conduction type; and a second conduction region provided in the window layer by impurity diffusion, the second conduction region having a band gap wider than that of the light absorption layer and having a second conduction type different from the first conduction type. The following condition is satisfied: X/W≧(M−1)2/(2M) where W is a film thickness from a lower surface of the light absorption layer and an upper surface of the multiplication layer, X is a film thickness of the second conduction region, and M is a multiplication factor.

Abstract translation: 一种半导体光接收装置，包括：第一导电类型的第一导电层; 设置在所述第一导电层上的光吸收层; 设置在光吸收层上的倍增层; 设置在所述乘法层上的窗口层，所述窗口层未掺杂或具有所述第一导电类型; 以及通过杂质扩散设置在窗口层中的第二导电区域，所述第二导电区域具有比光吸收层宽的带隙，并且具有不同于第一导电类型的第二导电类型。 满足以下条件：<？in-line-formula description =“In-line Formulas”end =“lead”？> X / W> =（M-1） ^{2 /（2M） <？in-line-formula description =“In-line Formulas”end =“tail”？>其中W是从光吸收层的下表面和倍增层的上表面的膜厚度，X是膜 第二导电区域的厚度，M是倍增因子。}

公开(公告)号：US20070263694A1

公开(公告)日：2007-11-15

申请号：US11616530

申请日：2006-12-27

Applicant: Takuya FUJII

Inventor： Takuya FUJII

IPC: H01S5/00 ,  H01S3/08 ,  H01S3/04

CPC classification number: H01S5/125 ,  H01S5/0265 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/06256 ,  H01S5/1057 ,  H01S5/106 ,  H01S5/1064 ,  H01S5/1209 ,  H01S5/1212 ,  H01S5/1221 ,  H01S5/1231 ,  H01S5/124 ,  H01S5/1246

Abstract: A semiconductor laser has first and second diffractive grating regions. The first diffractive grating region has segments, has a gain, and has first discrete peaks of a reflection spectrum. The second diffractive grating region has segments combined to each other, and has second discrete peaks of a reflection spectrum. Each segment has a diffractive grating and a space region. Pitches of the diffractive grating are substantially equal to each other. A wavelength interval of the second discrete peaks is different from that of the first discrete peaks. A part of a given peak of the first discrete peaks is overlapped with that of the second discrete peaks when a relationship between the given peaks of the first discrete peaks and the second discrete peaks changes. A first segment located in the first diffractive grating region or the second diffractive grating region has an optical length shorter or longer than the other segments of the first diffractive grating region and the second diffractive grating region by odd multiple of half of the pitch of the diffractive grating of the first diffractive grating region.

Abstract translation: 半导体激光器具有第一和第二衍射光栅区域。 第一衍射光栅区具有段，具有增益，并且具有反射光谱的第一离散峰。 第二衍射光栅区域具有彼此组合的段，并具有反射光谱的第二离散峰。 每个段具有衍射光栅和空间区域。 衍射光栅的间距基本相等。 第二离散峰的波长间隔与第一离散峰的波长间隔不同。 当第一离散峰和第二离散峰的给定峰之间的关系发生变化时，第一离散峰的给定峰的一部分与第二离散峰的一部分重叠。 位于第一衍射光栅区域或第二衍射光栅区域中的第一段具有比第一衍射光栅区域和第二衍射光栅区域的其他区段更短或更长的光学长度，其中衍射的间距的一半的奇数倍 第一衍射光栅区域的光栅。

公开(公告)号：US20070245188A1

公开(公告)日：2007-10-18

申请号：US11730254

申请日：2007-03-30

Applicant: Haruyoshi Ono

Inventor： Haruyoshi Ono

IPC: G01R31/28

CPC classification number: G01R31/2851

Abstract: A testing system includes: a plurality of test applying portions that operate a test device to make an output signal from the test device; a plurality of testing portions that test the output of the test device; and a switch portion that switches the output signal between the test applying portions and the testing portions. The testing portions each have a test information portion that outputs test item information which includes a test capability of the testing portion, and have a test performing portion that receives the output signal from the test applying portion which is selected under the test item information through the switch portion, and performs a test under a designated test item.

Abstract translation: 测试系统包括：多个测试应用部分，其操作测试设备以产生来自测试设备的输出信号; 测试所述测试装置的输出的多个测试部分; 以及切换部，其将测试施加部和测试部之间的输出信号切换。 测试部分各自具有测试信息部分，其输出包括测试部分的测试能力的测试项目信息，并且具有测试执行部分，其接收来自测试应用部分的输出信号，该测试应用部分通过测试项目信息被选择 开关部分，并在指定的测试项目下执行测试。

公开(公告)号：US20070230522A1

公开(公告)日：2007-10-04

申请号：US11727959

申请日：2007-03-29

Applicant: Tsutomu Ishikawa

Inventor： Tsutomu Ishikawa

IPC: H01S3/04

CPC classification number: H01S5/0612 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/125

Abstract: An optical semiconductor device has a heater, an optical waveguide layer, a first electrode and a second electrode. The heater is provided on a first semiconductor region and has more than one heater segment coupled or separated to each other. The optical waveguide layer is provided in the first semiconductor region and receives heat from the heater. The first electrode is coupled to a connecting point of the heater segments adjacent to each other. The second electrodes are electrically common and are coupled to other ends of the heater segments in opposite side of the connecting point respectively.

Abstract translation: 光学半导体器件具有加热器，光波导层，第一电极和第二电极。 加热器设置在第一半导体区域上，并且具有多个彼此耦合或分离的加热器段。 光波导层设置在第一半导体区域中并且从加热器接收热量。 第一电极耦合到彼此相邻的加热器段的连接点。 第二电极是电气公共的，并且分别耦合到加热器段的连接点的相对侧的另一端。