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公开(公告)号：US11945195B2
公开(公告)日：2024-04-02
申请号：US17431108
申请日：2020-02-25
Applicant: TOYO SEIKAN GROUP HOLDINGS, LTD.
Inventor： Shunya Nangou , Shinpei Okuyama , Misato Kawanishi , Keisuke Takayama
IPC: B32B27/08 , B32B7/12 , B32B27/36 , C09D7/65 , C09D133/02 , C09J7/29 , C09J7/38 , C23C14/10 , C23C16/40 , C23C16/50 , H10K50/844
CPC classification number: B32B27/08 , B32B7/12 , B32B27/36 , C09D7/65 , C09D133/02 , C09J7/29 , C09J7/38 , C23C14/10 , C23C16/401 , C23C16/50 , B32B2255/10 , B32B2255/20 , B32B2255/205 , B32B2307/7246 , B32B2307/732 , C09J2203/326 , C09J2301/16 , C09J2400/123 , C09J2433/006 , C09J2467/006 , C09J2475/00 , H10K50/844
Abstract: A water barrier laminate including inorganic barrier and water-trapping layers alternately arranged in order from the side facing the device to the outer side: a first inorganic barrier layer, a first water-trapping layer, a second inorganic barrier layer, a second water-trapping layer and a third inorganic barrier layer. A water-permeable underlying plastic layer is provided on one side of these inorganic barrier layers; a distance L1a between the first water-trapping layer and the first inorganic barrier layer and a distance L2a between the second water-trapping layer and the second barrier satisfy formulas (1) and (2):
L1a
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公开(公告)号：US20240105445A1
公开(公告)日：2024-03-28
申请号：US18470878
申请日：2023-09-20
Applicant: Tokyo Electron Limited
Inventor： Issei TAKEYASU , Tadahiro ISHIZAKA
CPC classification number: H01L21/02271 , C23C16/06 , C23C16/405 , C23C16/52 , H01L21/67167 , H01L21/6838
Abstract: A film forming method includes: preparing, on a stage, a substrate having an insulating layer in which a recess defined by an upper portion, a side wall portion, and a bottom portion is formed, and a tungsten layer exposed from the bottom portion of the recess; removing a tungsten oxide film, which has been formed by oxidizing the tungsten layer at the bottom portion, by supplying TiCl4 gas to at least the bottom portion of the recess; and embedding a ruthenium film in the recess after removing the tungsten oxide film.
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公开(公告)号：US20240103442A1
公开(公告)日：2024-03-28
申请号：US18533303
申请日：2023-12-08
Applicant: PATEK PHILIPPE SA GENEVE
Inventor： Sylvain JEANNERET
CPC classification number: G04B17/066 , C23C14/08 , C23C16/401 , G04B17/22 , G04B17/227 , G04D3/00
Abstract: Disclosed is a support member for supporting a wafer during a heat treatment of the wafer. The support member includes a support plate and spacers and retaining elements carried by the support plate. The spacers serve to maintain a gap between the support plate and the wafer. The retaining elements serve to prevent the wafer from moving horizontally. The support plate may be made of silicon, quartz or silicon carbide. The spacers and the retaining elements may be fixed to the support plate by bayonet-type connections.
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94.发明公开
公开(公告)号：US20240102159A1
公开(公告)日：2024-03-28
申请号：US17766467
申请日：2020-07-15
Applicant: SHIN-ETSU CHEMICAL CO., LTD.
Inventor： Hiroshi HASHIGAMI
IPC: C23C16/448 , C01G15/00 , C23C16/40 , C30B25/14 , C30B29/16
CPC classification number: C23C16/4486 , C01G15/00 , C23C16/40 , C30B25/14 , C30B29/16
Abstract: A method for producing a gallium precursor, including, a step of preparing a solvent comprising an aqueous solution containing an acid and/or an alkali, a step of immersing gallium in the solvent, a step of making the gallium immersed in the solvent fine, and a step of dissolving the fined gallium. This provides a method for producing a gallium precursor with high quality and highly productive.
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公开(公告)号：US11935759B2
公开(公告)日：2024-03-19
申请号：US16866497
申请日：2020-05-04
Applicant: LOTUS APPLIED TECHNOLOGY, LLC
Inventor： Eric R. Dickey
IPC: C23C16/34 , C23C16/40 , C23C16/455 , C23C16/503 , H01L21/02 , H01L21/441
CPC classification number: H01L21/441 , C23C16/34 , C23C16/401 , C23C16/402 , C23C16/45542 , C23C16/45553 , C23C16/503 , H01L21/0228
Abstract: Atomic layer deposition (ALD) methods and barrier films are disclosed. A method of performing ALD includes placing a substrate proximal an electrode coupled to a power supply, exposing the substrate to an oxygen-containing gas or a nitrogen-containing gas at or below 0.8 Torr, and applying, with the power supply, a voltage to the electrode of at least 700 Volts to induce a plasma state in the oxygen-containing gas or the nitrogen-containing gas proximal the substrate. High quality barrier films can be made with the methods.
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公开(公告)号：US11932941B1
公开(公告)日：2024-03-19
申请号：US17564472
申请日：2021-12-29
Inventor： Jeffrey Crutchfield
IPC: C23C16/40 , C23C16/455 , C23C16/46 , F27B5/04
CPC classification number: C23C16/45559 , C23C16/46 , F27B5/04
Abstract: In various aspects, a preheater, a directed flow chemical vapor infiltration/chemical vapor deposition (CVI/CVD) furnace, and/or an installation jig are described. In one example, a preheater includes a central inlet; a circuitous gas flow path downstream of the central inlet; a plenum section downstream of the circuitous gas flow path; and an outlet diffuser plate defining a plurality of apertures fluidly configured to couple the preheater to a furnace working zone, wherein the outlet diffuser plate is downstream of the plenum section, wherein the circuitous gas flow path is fluidly coupled to the plenum section by an outer circumferential slot opening.
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97.发明公开
公开(公告)号：US20240084446A1
公开(公告)日：2024-03-14
申请号：US18465787
申请日：2023-09-12
Applicant: ASM IP Holding, B.V.
Inventor： Iordan Iordanov , Christiaan Werkhoven , Loke Yuen Wong , Ivo Johannes Raaijmakers , Osama Khalil
IPC: C23C16/40 , C23C16/32 , C23C16/34 , C23C16/455 , C23C16/458
CPC classification number: C23C16/40 , C23C16/325 , C23C16/34 , C23C16/45553 , C23C16/458
Abstract: A reaction chamber component for use in a deposition apparatus for depositing a layer of a first material on a substrate is provided. The component may have a base material being partially coated with a liner of the first material. The component may have a protective layer of a second material different than the first material on top of the liner of the first material to protect the component. This may be useful during a removal process for removing a parasitic coating of the same first material deposited during use of the reaction chamber component.
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公开(公告)号：US11915914B2
公开(公告)日：2024-02-27
申请号：US18051097
申请日：2022-10-31
Applicant: Tokyo Electron Limited
Inventor： Sena Fujita , Hiroki Murakami
IPC: C23C16/08 , C23C16/34 , C23C16/40 , C23C16/455 , C23C16/505 , C23C16/52 , H01J37/32 , H01L21/02 , H01L21/32
CPC classification number: H01J37/32449 , C23C16/08 , C23C16/34 , C23C16/405 , C23C16/45529 , C23C16/45536 , C23C16/45542 , C23C16/505 , C23C16/52 , H01L21/02112 , H01L21/02274 , H01L21/0228 , H01L21/32
Abstract: A film forming method includes: preparing a substrate having a surface on which a first film containing boron and a second film made of a material different from that of the first film are formed; supplying a raw material gas, which contains halogen and an element X other than halogen, to the surface of the substrate; and supplying a plasmarized reaction gas, which contains oxygen, to the surface of the substrate, wherein a third film as an oxide film of the element X is selectively formed on the second film with respect to the first film by alternately supplying the raw material gas and the plasmarized reaction gas.
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99.发明公开
公开(公告)号：US20240035163A1
公开(公告)日：2024-02-01
申请号：US18482472
申请日：2023-10-06
Applicant: Carl Zeiss SMT GmbH
Inventor： Felix LANGE , Alexandra PAZIDIS , Marcel HAERTLING , Alexander WIEGAND
IPC: C23C16/48 , G02B5/08 , C23C16/513 , C23C16/52 , C23C16/40
CPC classification number: C23C16/482 , G02B5/0891 , C23C16/486 , C23C16/513 , C23C16/52 , C23C16/40
Abstract: The disclosed techniques relate to a method for depositing at least one layer composed of an ionically bonded solid on a substrate, comprising the following steps: converting a coating material to the gas phase and depositing the coating material converted to the gas phase on the substrate. The layer is irradiated with UV/VIS light during the deposition. The disclosed techniques also relate to an apparatus for implementing the disclosed method and optical elements and devices created using the disclosed method.
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公开(公告)号：US20240035151A1
公开(公告)日：2024-02-01
申请号：US18222587
申请日：2023-07-17
Applicant: Applied Materials, Inc.
Inventor： Rand Haddadin , Kunal Bhatnagar , Mohith Verghese , Jose Alexandro Romero , Aniruddh Shekhawat
CPC classification number: C23C16/06 , C23C16/045 , C23C16/40
Abstract: Methods for selective deposition are described herein. The methods include depositing an oxide on a first portion of a substrate surface selected from the group consisting of a metal surface, a metal nitride surface and a metal silicide surface. The methods further comprise selectively depositing a molybdenum film on a second portion of the substrate surface that does not have the oxide deposited thereon.
