摘要:
A plasma processing apparatus includes a chamber (20) and a target (25) above the chamber (20). The surface of the target (25) contacts the processing area of the chamber (20). The chamber (20) includes an insulating sub-chamber (21) and a first conductive sub-chamber (22), which are superposed. The first conductive sub-chamber (22) is provided under the insulating sub-chamber (21). The insulating sub-chamber (21) is made of insulating material, and the first conductive sub-chamber (22) is made of metal material. A Faraday shield component (10) which is made of metal material or insulating material electroplated with conductive coatings and includes at least one slit is provided in the insulating sub-chamber (21). An inductance coil (13) surrounds the exterior of the insulating sub-chamber (21). The problem about the wafer contamination due to particles formed on the surface of the coil during the sputtering process can be solved by using the plasma processing apparatus.
摘要:
The embodiment of the present disclosure discloses a method and apparatus for detecting frequency deviation of a clock. The method includes: counting the clock to be detected to acquire current counting information; filtering the current counting information to acquire filtered data; and acquiring the frequency deviation of the clock to be detected from the filtered data. According to the embodiments of the present disclosure, the detection accuracy of frequency deviation is improved by filtering the counting information acquired by counting the clock to be detected, and appropriately increasing an amount of information after the filtering, so as to perceive the occurrence of any abnormal dithering, and avoid neglecting of any abnormal condition in periodic or aperiodic queries.
摘要:
A user's downlink component carriers DL-CCs are divided into groups. An aperiodic CQI/PMI report is triggered by signaling (for example one bit). There is a pattern that maps the signaled trigger to a particular DL-CC within a group of DL-CCs that are configured for a user equipment UE, and that mapped particular DL-CC is determined to be the subject of the aperiodic report. In various embodiments the pattern is implicit and points to the DL-CC for which an aperiodic report has not been sent for more than a threshold time interval; or to the DL-CC for which resources have not been allocated for a periodic report; or to every DL-CC in the group that are activated for the user equipment. Examples are detailed for apparatus, method and computer program from the perspective of the network and from the perspective of the UE.
摘要:
Methods, apparatuses and related computer program product for control information signaling. It is disclosed a method/apparatus comprising predetermining, specifically for each of a plurality of terminals, a transmission mode in correspondence with a predetermined second control information format, transmitting, in a first predetermined portion of a set of control channel candidates, a first control information format of a first size, defining, based on the second control information format, a scheduling grant format of a second size different from the first size to be applied on a second predetermined portion of the set of control channel candidates, equating the first size so as to match with the second size, and transmitting, in the second predetermined portion, the equated first control information; and a method/apparatus comprising monitoring, in the first and second predetermined portions, reception of the first control information format, upon reception of a configuration message relating to the transmission mode, continuing the monitoring and monitoring reception of the scheduling grant format.
摘要:
A solar cell includes a semiconductor substrate, a doping layer, a quantum well layer, a first passivation layer, a second passivation layer, a first electrode and a second electrode. The semiconductor substrate has a front surface and a back surface, and the front surface of the semiconductor substrate includes nano-rods. The doping layer covers the surface of the nano-rods. The electrode layers cover the doping layer. The quantum well layer having at least one first doping region and at least one second doping region is disposed on the semiconductor substrate. The quantum well layer includes polycrystalline silicon germanium (Si1-xGex). The first passivation layer and the second passivation layer cover the first and the second doping regions of the quantum well layer, respectively. The first electrode and the second electrode are electrically connected to the first doping region and the second doping region of the quantum well layer, respectively.
摘要:
There is provided a method including performing frequency domain acknowledgement/negative acknowledgement (ACK/NAK) bundling across component carriers within a user equipment reception bandwidth; generating a bundled ACK/NAK value corresponding to at least one code word on the basis of the performed ACK/NAK bundling; and including information relating to the generated bundled ACK/NAK value and the number of detected downlink grants within the user equipment reception bandwidth in an ACK/NAK resource to be transmitted on an uplink control channel.
摘要:
A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the quantum well structure, a first electrode formed on the p-type semiconductor, and a second electrode formed on at least a portion of the n-type semiconductor layer. Each quantum well structure includes an InxGa1-xN quantum well layer, an InyGa1-yN barrier layer (x>0.3 or x=0.3), and InzGa1-zN quantum dots, where x
摘要翻译:白色发光二极管包括n型半导体层,在n型半导体层上形成的一个或多个量子阱结构,形成在量子阱结构上的p型半导体层,形成在p型半导体层上的第一电极, 和形成在n型半导体层的至少一部分上的第二电极。 每个量子阱结构包括In x Ga 1-x N量子阱层,In y Ga 1-y N势垒层(x> 0.3或x = 0.3)和In x Ga 1-z N量子点,其中x
摘要:
A kind of growth method of Fe3N, and the growth is in the MOCVD system, including following process: 1). the surface nitridation of sapphire substrate would be made; 2). pump in carrier gas N2, ammonia and organic gallium sources, and grow low temperature GaN buffer on substrate; 3). the temperature would be raised and grow the GaN supporting layer; 4). pump in FeCp2 as Fe sources, then grow Fe3N on the GaN supporting layer; the Fe3N granular films and the Fe3N single crystal films could be obtained. The invention realizes growing high quality Fe3N film. According to the problem of growing material with difficulty, the problems are solved by controlling and adjusting the conditions for the flux of organic gallium source and iron source, growth temperature, growth time, the flux of ammonia, and mole ratio of N and Ga. In the invention, the method is easy, the growth process could be controlled, and thus the growth method and the process control of growth technology have advancement.
摘要:
A method for interactive delivery of multimedia content includes accepting interactive multimedia content encoded in a multiplexed data stream, the stream includes segments that at least some include control data for presentation of the content. The method also includes receiving requests from one or more terminals, at least some of the requests identifies particular segments of the multiplexed data stream, and transmitting identified segments of the multiplexed data stream to the terminals in response to the received requests.
摘要:
Methods for preparing improved Panax Notoginseng saponin fraction from a Sanchi extract and its use in pharmaceutical compositions for treating or preventing a blood circulation disorder.