摘要:
A fuel electrode catalyst includes: a solid solution of platinum (Pt) and molybdenum (Mo), a crystal structure of the solid solution being a face-centered cubic structure, and a component ratio of the molybdenum (Mo) in the solid solution being from 10 atom % (at %) to 20 atom % (at %), and a method for producing a fuel electrode catalyst, includes: generating platinum hydrate and molybdenum oxide from chloroplatinic acid (H2PtCl6) and sodium molybdate dihydrate (Na2MoO4.2H2O); reducing the platinum hydrate and the molybdenum oxide; and therewith solid-solving molybdenum (Mo) into platinum (Pt).
摘要:
An optical condenser device has light sources (10, 20) and an optical combiner (30). Each light source (10, 20) includes a semiconductor laser array (12, 22), a collimator lens (16, 26) and a beam converter (18, 28). The optical combiner (30) combines the beams from the light sources (10, 20). The spread of the beams in planes perpendicular to the direction of alignment of the active layers (14, 24) is restrained by the refraction of the collimator lenses (16, 26). The transverse sections of the respective beams are rotated by substantially 90° by the beam converters (18, 28). The spread of the beams in the direction of alignment of the active layers is thus restrained and crossing of adjacent beams becomes unlikely to occur.
摘要:
A semiconductor laser device 3 includes an n-type clad layer 13, an active layer 15, and a p-type clad layer 17. The p-type clad layer 17 has a ridge portion 9 that forms a waveguide 4 in the active layer 15. The waveguide 4 extends along a central axial line B that is curved at a substantially constant curvature (curvature radius R). In such a waveguide 4, of the light components that resonate inside the waveguide 4, light components of higher spatial transverse mode order are greater in loss. Laser oscillations of high-order transverse modes can thus be suppressed while maintaining laser oscillations of low-order transverse modes. A semiconductor laser device and a semiconductor laser device array, which can emit laser light of comparatively high intensity and with which high-order transverse modes can be suppressed, are thereby realized.
摘要:
The present invention relates to a semiconductor laser element and the like which can efficiently emit laser beams at a small emission angle using a simpler configuration. The semiconductor laser element has a structure where an n-type cladding layer, active layer and p-type cladding layer are sequentially laminated. The p-type cladding layer has a ridge portion for forming a refractive index type waveguide in the active layer. The ridge portion, at least the portion excluding the edges, extends in a direction crossing each normal line of both end faces of the refractive index type waveguide, which corresponds to the light emitting face and light reflecting face respectively, at an angle θ, which is equal to or less than the complementary angle θc of the total reflection critical angle on the side face of the refractive index type waveguide. The optical paths of light components which resonate in the refractive index type waveguide formed by the ridge portion having the above form are limited to optical paths where the lights are totally reflected on the side face of the refractive index type waveguide. In other words, the laser beams emitted from the light emitting end have a spatial horizontal single mode, and the waveguide width can be increased to further decrease the emission angle of the laser beams.
摘要:
An electrode membrane structure includes a solid electrolyte membrane of a polymer material, and a fuel electrode and an air electrode stacked on both sides of the solid electrolyte membrane. The fuel electrode is formed of an anode catalyst layer and a fuel electrode collector, and the air electrode is formed of a cathode catalyst layer and an air electrode collector. At the backside of the fuel electrode collector, a fuel tank is defined between a casing and a fuel holding film. The interior of the fuel tank is divided into a plurality of divisions by a partition to uniformly distribute liquid fuel to the fuel electrode. The liquid fuel (methanol) in the fuel tank is absorbed and held by the fuel holding film, is dispersed through the fuel holding film to the fuel electrode.
摘要:
A semiconductor is provided with: a silicon substrate 2a of a first conductivity type, including a first surface S1a and a second surface S2a; a silicon layer 4a of a second conductivity type, arranged on the first surface S1a of the silicon substrate 2a, including a third surface S3a opposite a junction surface with the silicon substrate 2a; a first electrode 12a arranged on the second surface S2a; a second electrode 14a arranged on the third surface S3a; and an argon added area 6a formed in a semiconductor area formed of the silicon substrate 2a and the silicon layer 4a. The argon added area 6a includes an area indicating an argon concentration of a minimum of 1×1018 cm−3 and a maximum of 2×1020 cm−3.
摘要:
The present invention relates to a semiconductor laser element and the like which can efficiently emit laser beams at a small emission angle using a simpler configuration. The semiconductor laser element has a structure where an n-type cladding layer, active layer and p-type cladding layer are sequentially laminated. The p-type cladding layer has a ridge portion for forming a refractive index type waveguide in the active layer. The ridge portion, at least the portion excluding the edges, extends in a direction crossing each normal line of both end faces of the refractive index type waveguide, which corresponds to the light emitting face and light reflecting face respectively, at an angle θ, which is equal to or less than the complementary angle θc of the total reflection critical angle on the side face of the refractive index type waveguide. The optical paths of light components which resonate in the refractive index type waveguide formed by the ridge portion having the above form are limited to optical paths where the lights are totally reflected on the side face of the refractive index type waveguide. In other words, the laser beams emitted from the light emitting end have a spatial horizontal single mode, and the waveguide width can be increased to further decrease the emission angle of the laser beams.
摘要:
An optical condenser device has light sources (10, 20) and an optical combiner (30). Each light source (10, 20) includes a semiconductor laser array stack (12, 22), collimator lenses (16, 26), and beam converters (18, 28). Since the optical combiner (30) combines the beams from one (12) of the stacks and the beams from the other (22), a laser beam with high optical density is generated. The optical combiner (30) has transmitting portions (32) and reflecting portions (34), each of which preferably has a strip-like shape elongated in the layering directions of the stacks (12, 22). In this case, the beams emitted from the active layers (14, 24) will be received and combined appropriately by the optical combiner (30) even if positional deviation of the active layers (14, 24) occurs.
摘要:
The present passively Q-switched laser comprises a condensing optical system for condensing a laser beam emitted from a laser light source onto the surface of the solid-state laser medium. The surface of a solid-state laser medium is disposed off the condensation position of the laser beam produced by the condensing optical system.
摘要:
In the first period from pumping start time T1 to time T2 in a laser light source 1, the power of pumping light L1 outputted from a pumping light source 41 so as to irradiate a laser medium 21 is at value P1 whereas the power of light L2 incident on a saturable absorber 30 after being emitted from the laser medium 21 is at an absorption saturation threshold or lower, which causes a resonator 10 to lower its Q-value, thereby suppressing the laser oscillation. Immediately before time T2, the power of light L2 is slightly lower than the absorption saturation threshold. In the second period subsequent to the first period, the power of light L2 is at value P2 greater than the above-mentioned value P1, whereas the power of light L2 exceeds the absorption saturation threshold, which causes the resonator 10 to increase its Q-value, whereby a mirror 12 outputs pulse laser light L3 to the outside.