公开(公告)号：US08487327B2

公开(公告)日：2013-07-16

申请号：US13484776

申请日：2012-05-31

申请人： Yohei Enya ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

发明人： Yohei Enya ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L33/00 ,  H01L29/04

CPC分类号： H01L21/02458 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2302/00

摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle with respect to a c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes GaN-based semiconductor layers. The reference axis is inclined at a first angle from the c-axis of the III-nitride semiconductor toward a first crystal axis, either the m-axis or a-axis. The reference axis is inclined at a second angle from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.

摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，其具有沿与第一参考平面垂直的第一参考平面延伸的第一表面，所述第一参考平面垂直于相对于III族氮化物的c轴以预定角度倾斜的参考轴 半导体和设置在支撑基体的主表面上的外延半导体区域。 外延半导体区域包括GaN基半导体层。 基准轴从III族氮化物半导体的c轴朝向第一晶轴倾斜第一角度，即m轴或a轴。 基准轴从III族氮化物半导体的c轴向第二晶轴倾斜第二角度，m轴和a轴的另一方倾斜。 外延半导体区域的最外表面的形态包括多个凹坑。 坑的坑密度不大于5×104cm-2。

公开(公告)号：US20130105762A1

公开(公告)日：2013-05-02

申请号：US13588746

申请日：2012-08-17

申请人： Takashi KYONO ,  Yohei ENYA ,  Masaki UENO

发明人： Takashi KYONO ,  Yohei ENYA ,  Masaki UENO

IPC分类号： H01L33/06 ,  H01L21/66 ,  H01L33/32

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3403 ,  H01S5/3404 ,  H01S5/34333 ,  H01S2304/04

摘要： A nitride semiconductor light-emitting device includes a support base and a diode structure. The support base has a primary surface of a hexagonal nitride semiconductor. The diode structure is provided on the primary surface of the support base. The diode structure includes a first conductivity type group-III nitride semiconductor layer provided on the primary surface of the support base, a light-emitting layer provided on the first conductivity type group-III nitride semiconductor layer, and a second conductivity type group-III nitride semiconductor layer provided on the light-emitting layer. The light-emitting layer has a multiple quantum well structure including first and second well layers and a barrier layer. The thickness of the barrier layer is 4.5 nm or less. The primary surface of the support base tilts at a tilt angle in the range of 50 to 80 degrees or 130 to 170 degrees from a c-plane of the hexagonal nitride semiconductor.

摘要翻译： 氮化物半导体发光器件包括支撑基底和二极管结构。 支撑基底具有六方氮化物半导体的主表面。 二极管结构设置在支撑基座的主表面上。 二极管结构包括设置在支撑基体的主表面上的第一导电型III族氮化物半导体层，设置在第一导电型III族氮化物半导体层上的发光层和第二导电类型III族 氮化物半导体层设置在发光层上。 发光层具有包括第一和第二阱层以及阻挡层的多量子阱结构。 阻挡层的厚度为4.5nm以下。 支撑基座的主表面以与六边形氮化物半导体的c面成50至80度或130至170度的倾斜角倾斜。

公开(公告)号：US08405066B2

公开(公告)日：2013-03-26

申请号：US12999987

申请日：2010-06-14

申请人： Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Takamichi Sumitomo ,  Masaki Ueno

发明人： Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Takamichi Sumitomo ,  Masaki Ueno

IPC分类号： H01L33/04

CPC分类号： H01L33/04 ,  H01L33/12

摘要： A nitride-based semiconductor light-emitting device having enhanced efficiency of carrier injection to a well layer is provided. The nitride-based semiconductor light-emitting device comprises a hexagonal gallium nitride-based semiconductor substrate 5, an n-type gallium nitride-based semiconductor region 7 disposed on the principal surface S1 of the substrate 5, a light-emitting layer 11 having a single-quantum-well structure disposed on the n-type gallium nitride-based semiconductor region 7, and a p-type gallium nitride-based semiconductor region 19 disposed on the light-emitting layer 11. The light-emitting layer 11 is disposed between the n-type gallium nitride-based semiconductor region 7 and the p-type gallium nitride-based semiconductor region 19. The light-emitting layer 11 includes a well layer 15 and barrier layers 13 and 17. The well layer 15 comprises InGaN. The principal surface S1 extends along a reference plane S5 tilting from a plane perpendicular to the c-axis of the hexagonal gallium nitride-based semiconductor at a tilt angle in a range of not less than 63 degrees and not more than 80 degrees or in a range of not less than 100 degrees and not more than 117 degrees.

摘要翻译： 提供了一种具有提高载流子注入阱层效率的氮化物基半导体发光器件。 氮化物系半导体发光元件包括六方晶系氮化镓系半导体基板5，配置在基板5的主面S1上的n型氮化镓系半导体区域7，发光层11具有 设置在n型氮化镓系半导体区域7上的单量子阱结构以及配置在发光层11上的p型氮化镓系半导体区域19.发光层11配置在 n型氮化镓基半导体区域7和p型氮化镓基半导体区域19.发光层11包括阱层15和势垒层13和17.阱层15包括InGaN。 主表面S1沿着垂直于六方晶系氮化镓基半导体的c轴的平面倾斜的参考平面S5延伸，倾斜角度在不小于63度且不大于80度的范围内，或者在 范围不小于100度且不大于117度。

公开(公告)号：US08304793B2

公开(公告)日：2012-11-06

申请号：US12836117

申请日：2010-07-14

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takashi Kyono ,  Takao Nakamura

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takashi Kyono ,  Takao Nakamura

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/22 ,  H01S5/3054 ,  H01S5/3202

摘要： A III-nitride semiconductor optical device has a support base comprised of a III-nitride semiconductor, an n-type gallium nitride based semiconductor layer, a p-type gallium nitride based semiconductor layer, and an active layer. The support base has a primary surface at an angle with respect to a reference plane perpendicular to a reference axis extending in a c-axis direction of the III-nitride semiconductor. The n-type gallium nitride based semiconductor layer is provided over the primary surface of the support base. The p-type gallium nitride based semiconductor layer is doped with magnesium and is provided over the primary surface of the support base. The active layer is provided between the n-type gallium nitride based semiconductor layer and the p-type gallium nitride based semiconductor layer over the primary surface of the support base. The angle is in the range of not less than 40° and not more than 140°. The primary surface demonstrates either one of semipolar nature and nonpolar nature. The p-type gallium nitride based semiconductor layer contains carbon as a p-type dopant. A carbon concentration of the p-type gallium nitride based semiconductor layer is not less than 2×1016 cm−3, and the carbon concentration of the p-type gallium nitride based semiconductor layer is not more than 1×1019 cm−3.

摘要翻译： III族氮化物半导体光学器件具有由III族氮化物半导体，n型氮化镓系半导体层，p型氮化镓系半导体层和有源层构成的支撑基体。 支撑基座具有相对于垂直于在III族氮化物半导体的c轴方向上延伸的参考轴线的参考平面成一定角度的主表面。 n型氮化镓基半导体层设置在支撑基体的主表面上。 p型氮化镓基半导体层掺杂有镁并且设置在载体基体的主表面上。 有源层设置在支撑基体的主表面上的n型氮化镓基半导体层和p型氮化镓基半导体层之间。 该角度在不小于40°且不大于140°的范围内。 主要表面表现出半极性和非极性之一。 p型氮化镓系半导体层含有碳作为p型掺杂剂。 p型氮化镓系半导体层的碳浓度为2×1016cm-3以上，p型氮化镓系半导体层的碳浓度为1×1019cm-3以下。

公开(公告)号：US20120184057A1

公开(公告)日：2012-07-19

申请号：US13366748

申请日：2012-02-06

申请人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Takamichi SUMITOMO ,  Masaki UENO ,  Takatoshi IKEGAMI ,  Koji KATAYAMA ,  Takao NAKAMURA

发明人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Takamichi SUMITOMO ,  Masaki UENO ,  Takatoshi IKEGAMI ,  Koji KATAYAMA ,  Takao NAKAMURA

IPC分类号： H01L21/301

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0287 ,  H01S5/1085 ,  H01S5/16 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/3213 ,  H01S5/34333 ,  H01S2301/14

摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, where the semipolar primary surface includes a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, where the laser structure includes a substrate and a semiconductor region, and the semiconductor region is formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively.

摘要翻译： 一种制造III族氮化物半导体激光器件的方法包括：制备具有半极性主表面的衬底，其中半极性主表面包括六边形III族氮化物半导体; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括基板和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在形成基板产品之后，形成第一和第二端面; 以及分别在第一和第二端面上形成用于氮化物半导体激光器件的光腔的第一和第二电介质多层膜。

公开(公告)号：US08183071B2

公开(公告)日：2012-05-22

申请号：US12539887

申请日：2009-08-12

申请人： Katsushi Akita ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura

发明人： Katsushi Akita ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01S2304/04

摘要： In step S106, an InXGa1-XN well layer is grown on a semipolar main surface between times t4 and t5 while a temperature in a growth furnace is maintained at temperature TW. In step S107, immediately after completion of the growth of the well layer, the growth of a protective layer covering the main surface of the well layer is initiated at temperature TW. The protective layer is composed of a gallium nitride-based semiconductor with a band gap energy that is higher than that of the well layer and equal to or less than that of a barrier layer. In step S108, the temperature in the furnace is changed from temperatures TW to TB before the barrier layer growth. The barrier layer composed of the gallium nitride-based semiconductor is grown on the protective layer between times t8 and t9 while the temperature in the furnace is maintained at temperature TB.

摘要翻译： 在步骤S106中，在时间t4〜t5的半极性主面上生长InXGa1-XN阱层，而生长炉内的温度保持在温度TW。 在步骤S107中，在阱层生长完成之后，在温度TW下开始覆盖阱层主表面的保护层的生长。 保护层由氮化镓系半导体构成，带隙能量高于阱层的带隙能量，并且等于或小于势垒层的带隙能量。 在步骤S108中，在阻挡层生长之前，炉中的温度从温度TW变为TB。 由氮化镓系半导体构成的阻挡层在时刻t8〜t9的保护层上生长，同时炉内的温度保持在温度TB。

公开(公告)号：US20120086015A1

公开(公告)日：2012-04-12

申请号：US13243516

申请日：2011-09-23

申请人： Takashi KYONO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

发明人： Takashi KYONO ,  Yusuke YOSHIZUMI ,  Yohei ENYA ,  Katsushi AKITA ,  Masaki UENO ,  Takamichi SUMITOMO ,  Takao NAKAMURA

IPC分类号： H01L29/20

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device includes a group III nitride semiconductor supporting base, a GaN based semiconductor region, an active layer, and a GaN semiconductor region. The primary surface of the group III nitride semiconductor supporting base is not any polar plane, and forms a finite angle with a reference plane that is orthogonal to a reference axis extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region, grown on the semipolar primary surface, includes a semiconductor layer of, for example, an n-type GaN based semiconductor doped with silicon. A GaN based semiconductor layer of an oxygen concentration of 5×1016 cm−3 or more provides an active layer, grown on the primary surface, with an excellent crystal quality.

摘要翻译： 提供具有优异表面形态的具有氮化镓基半导体膜的III族氮化物半导体器件。 III族氮化物光半导体器件包括III族氮化物半导体支撑基底，GaN基半导体区域，有源层和GaN半导体区域。 III族氮化物半导体支撑基体的主表面不是任何极性平面，并且与与在III族氮化物半导体的c轴方向上延伸的参考轴正交的参考平面形成有限角度。 在半极性主表面上生长的GaN基半导体区域包括例如掺杂有硅的n型GaN基半导体的半导体层。 氧浓度为5×1016cm-3以上的GaN系半导体层能够提供在主表面生长的活性层，其结晶质量优异。

公开(公告)号：US20120080659A1

公开(公告)日：2012-04-05

申请号：US13279005

申请日：2011-10-21

申请人： Masaki UENO ,  Yohei Enya ,  Takashi Kyono ,  Katsushi Akita ,  Yusuke Yoshizumi ,  Takamichi Sumitomo ,  Takao Nakamura

发明人： Masaki UENO ,  Yohei Enya ,  Takashi Kyono ,  Katsushi Akita ,  Yusuke Yoshizumi ,  Takamichi Sumitomo ,  Takao Nakamura

IPC分类号： H01L33/04

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L33/18 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3407 ,  H01S2301/173 ,  H01S2304/04

摘要： In the nitride based semiconductor optical device, the strained well layers extend along a reference plane tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. A gallium nitride based semiconductor layer is adjacent to a light-emitting layer with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer and the gallium nitride based semiconductor layer.

摘要翻译： 在基于氮化物的半导体光学器件中，应变阱层沿着从与c轴方向延伸的参考轴正交的平面以倾斜角α倾斜的参考平面延伸。 氮化镓基半导体层与具有负的压电场的发光层相邻，并且具有比阻挡层的带隙大的带隙。 阱层中的压电场的方向指向从n型层到p型层的方向，并且氮化镓基半导体层中的压电场沿着从p型层的方向 到n型层。 因此，价带，而不是导带，在发光层和氮化镓基半导体层之间的界面处有下沉。

公开(公告)号：US20120008660A1

公开(公告)日：2012-01-12

申请号：US13211858

申请日：2011-08-17

申请人： Kei FUJII ,  Masaki UENO ,  Katsushi AKITA ,  Takashi KYONO ,  Yusuke YOSHIZUMI ,  Takamichi SUMITOMO ,  Yohei ENYA

发明人： Kei FUJII ,  Masaki UENO ,  Katsushi AKITA ,  Takashi KYONO ,  Yusuke YOSHIZUMI ,  Takamichi SUMITOMO ,  Yohei ENYA

IPC分类号： H01S5/343 ,  H01L33/04 ,  B82Y20/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3404 ,  H01S2304/04

摘要： Provided is a III-nitride semiconductor laser allowing for provision of a low threshold with use of a semipolar plane. A primary surface 13a of a semiconductor substrate 13 is inclined at an angle of inclination AOFF in the range of not less than 50 degrees and not more than 70 degrees toward the a-axis direction of GaN with respect to a reference plane perpendicular to a reference axis Cx along the c-axis direction of GaN. A first cladding layer 15, an active layer 17, and a second cladding layer 19 are provided on the primary surface 13a of the semiconductor substrate 13. The well layers 23a of the active layer 17 comprise InGaN. A polarization degree P in the LED mode of emission from the active layer of the semiconductor laser that reaches lasing is not less than −1 and not more than 0.1. The polarization degree P of the III-nitride semiconductor laser is defined by P=(I1−I2)/(I1+I2), using an electric field component I1 in the X1 direction and an electric field component I2 in the X2 direction of light in the LED mode.

摘要翻译： 提供了允许使用半极性平面提供低阈值的III族氮化物半导体激光器。 半导体基板13的主表面13a相对于垂直于参考的参考平面朝向a轴方向的不小于50度且不超过70度的范围内以倾斜角AOFF倾斜 沿着C轴方向的C x轴。 在半导体衬底13的主表面13a上设置第一覆层15，有源层17和第二覆层19.有源层17的阱层23a包括InGaN。 来自激光器的半导体激光器的有源层的发光LED的偏振度P不小于-1且不大于0.1。 III族氮化物半导体激光器的偏振度P通过使用X1方向的电场分量I1和X2方向的电场分量I2由P =（I1-I2）/（I1 + I2）定义 在LED模式下。

公开(公告)号：US08071986B2

公开(公告)日：2011-12-06

申请号：US11659002

申请日：2006-04-25

申请人： Takashi Kyono ,  Katsushi Akita ,  Hideki Hirayama

发明人： Takashi Kyono ,  Katsushi Akita ,  Hideki Hirayama

IPC分类号： H01L27/15

CPC分类号： H01L33/32 ,  H01L33/06

摘要： A nitride semiconductor light-emitting element 11 is one for generating light containing a wavelength component in an ultraviolet region. The nitride semiconductor light-emitting element 11 has an active region 17 including InX1AlY1Ga1-X1-Y1N well layers 13 (1>X1>0 and 1>Y1>0) and InX2AlY2Ga1-X2-Y2N barrier layers 15 (1>X2>0 and 1>Y2>0). An energy gap difference Eg1 between the InX1AlY1Ga1-X1-Y1N well layers 13 and the InX2AlY2Ga1-X2-Y2N barrier layers 15 is not less than 2.4×10−20 J nor more than 4.8×10−20 J.

摘要翻译： 氮化物半导体发光元件11是用于产生包含紫外线区域中的波长分量的光的氮化物半导体发光元件。 氮化物半导体发光元件11具有InX1AlY1Ga1-X1-Y1N阱层13（1> X1> 0和Y1> Y1> 0）和InX2AlY2Ga1-X2-Y2N势垒层15（1> X2> 0）的有源区17 和1> Y2> 0）。 InX1AlY1Ga1-X1-Y1N阱层13和InX2AlY2Ga1-X2-Y2N势垒层15之间的能隙差Eg1不小于2.4×10-20J，也不大于4.8×10-20J。