Photoresist composition, preparation method thereof and method for forming a pattern during semiconductor processing using the photoresist composition
    121.
    发明授权
    Photoresist composition, preparation method thereof and method for forming a pattern during semiconductor processing using the photoresist composition 有权
    光致抗蚀剂组合物及其制备方法以及在使用光致抗蚀剂组合物的半导体处理期间形成图案的方法

    公开(公告)号:US06503682B1

    公开(公告)日:2003-01-07

    申请号:US09539524

    申请日:2000-03-30

    IPC分类号: G03F7023

    CPC分类号: G03F7/0236

    摘要: A positive photoresist composition having improved sensitivity and resolution, a method of making the composition, and a method for forming a pattern during semiconductor processing using the composition are disclosed. The photoresist composition includes: (i) a photosensitive material obtained by mixing a first photosensitive compound represented by formula (1) and a second photosensitive compound represented by formulae (2a) or (2b); (ii) a resin; and (iii) a solvent. The invention enables the formation of patterns with an exceptional profile due to a high degree of sensitivity and resolution of the photoresist composition.

    摘要翻译: 公开了具有改进的灵敏度和分辨率的正性光致抗蚀剂组合物,制备组合物的方法,以及使用该组合物在半导体加工期间形成图案的方法。 光致抗蚀剂组合物包括:(i)通过将由式(1)表示的第一光敏化合物和由式(2a)或(2b)表示的第二感光性化合物混合而获得的感光材料; (ii)树脂; 和(iii)溶剂。 由于光致抗蚀剂组合物的高灵敏度和分辨率,本发明能够形成具有特殊外形的图案。