公开(公告)号：US5169408A

公开(公告)日：1992-12-08

申请号：US470871

申请日：1990-01-26

申请人： Rex L. Biggerstaff ,  Charles W. Skinner ,  Daniel J. Syverson ,  Mark L. Jenson ,  James G. Kegley

发明人： Rex L. Biggerstaff ,  Charles W. Skinner ,  Daniel J. Syverson ,  Mark L. Jenson ,  James G. Kegley

IPC分类号： H01L21/00

CPC分类号： H01L21/67023 ,  Y10S134/902 ,  Y10T29/41

摘要： A wafer processing apparatus including a head defining an etching chamber, the sidewall of the head being slidable along the base so that the sidewall and base will normally define an etch chamber; and the sidewall may be moved upwardly to open a discharge passage for rinsing water, and a deflecting surface for deflecting the rinsing water downwardly and draining the rinsing water from the passage. The housing is separable above the deflector ring to provide access to the wafer for inserting the wafer and replacing it.

摘要翻译： 一种晶片处理设备，包括限定蚀刻室的头部，所述头部的侧壁可沿所述底座滑动，使得所述侧壁和底座通常限定蚀刻室; 并且侧壁可以向上移动以打开用于冲洗水的排出通道，以及用于向下偏转冲洗水并将冲洗水从通道排出的偏转表面。 壳体在偏转环之上是可分离的，以提供对晶片的接近以插入晶片并进行更换。

公开(公告)号：US4897288A

公开(公告)日：1990-01-30

申请号：US168293

申请日：1988-03-15

申请人： Mark L. Jenson

发明人： Mark L. Jenson

IPC分类号： G11C11/15

CPC分类号： H01L43/12 ,  G11C11/15

摘要： A magnetic solid state device, such as a magnetoresistive memory cell, includes first and second layers of magnetoresistive material. The first and second layers are separated by a third layer which prevents exchange coupling between the magnetic dipoles of the first and second layers. The first, second and third layers are formed as a strip. A fourth layer of a resistive material, such as nitrogen doped tantalum, overlies the first layer. The fourth layer includes spaced, raised portions over which electrically conductive material, such as TiW, may be formed on top of the raised portions.

摘要翻译： 诸如磁阻存储单元的磁固态器件包括第一和第二层磁阻材料。 第一层和第二层被第三层隔开，其防止第一层和第二层的磁偶极之间的交换耦合。 第一，第二和第三层形成为条带。 诸如氮掺杂钽的电阻材料的第四层覆盖在第一层上。 第四层包括间隔开的凸起部分，导电材料，例如TiW，可以形成在凸起部分的顶部上。