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131.发明申请ELECTRON BEAM PLASMA SOURCE WITH SEGMENTED BEAM DUMP FOR UNIFORM PLASMA GENERATION 有权电子束等离子体源用于均匀等离子体生成公开(公告)号：US20130098882A1
公开(公告)日：2013-04-25
申请号：US13595292
申请日：2012-08-27
申请人： Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
发明人： Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
IPC分类号： B23K15/00
CPC分类号： H01J37/3233 , G21K5/00 , H05H1/46 , H05H7/001
摘要： A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented beam dump that is profiled to promote uniformity in the electron beam-produced plasma.
摘要翻译： 通过电子束在工件处理室中产生等离子体的等离子体反应器具有电子束源和分段的束流，其形状是为了促进电子束产生的等离子体中的均匀性。
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132.发明申请OVERHEAD ELECTRON BEAM SOURCE FOR PLASMA ION GENERATION IN A WORKPIECE PROCESSING REGION 审中-公开用于工厂加工区域中等离子体生成的OVERHEAD电子束源公开(公告)号：US20130098873A1
公开(公告)日：2013-04-25
申请号：US13595655
申请日：2012-08-27
申请人： Kartik Ramaswamy , Kallol Bera , Kenneth S. Collins , Shahid Rauf
发明人： Kartik Ramaswamy , Kallol Bera , Kenneth S. Collins , Shahid Rauf
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01J37/32091 , H01J37/32541
摘要： A plasma reactor has a main chamber for processing a workpiece in a processing region bounded between an overhead ceiling and a workpiece support surface, the reactor having an overhead electron beam source that produces an electron beam flowing into the processing region through the ceiling of the main chamber.
摘要翻译： 等离子体反应器具有用于在位于顶棚顶板和工件支撑表面之间的加工区域内加工工件的主室，所述反应器具有塔顶电子束源，其产生通过主体的天花板流入处理区域的电子束 房间。
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133.发明申请E-BEAM PLASMA SOURCE WITH PROFILED E-BEAM EXTRACTION GRID FOR UNIFORM PLASMA GENERATION 审中-公开E-BEAM等离子体源，具有用于均匀等离子体生成的分布式电子束提取网公开(公告)号：US20130098552A1
公开(公告)日：2013-04-25
申请号：US13595252
申请日：2012-08-27
申请人： Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
发明人： Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
IPC分类号： C23F1/08
CPC分类号： H01J37/3233 , H01J2237/06366
摘要： A plasma, reactor that relies on an electron beam as a plasma source employs a profiled electron beam extraction grid in an electron beam source to improve uniformity.
摘要翻译： 依靠电子束作为等离子体源的等离子体反应器采用电子束源中的形状电子束提取栅格来改善均匀性。
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134.发明申请PLASMA REACTOR WITH PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF A SOURCE POWER OR BIAS POWER RF GENERATOR 有权具有等离子体负载阻抗的等离子体反应器通过同步电源或偏置功率射频发生器的同步调制进行工程过程公开(公告)号：US20090294062A1
公开(公告)日：2009-12-03
申请号：US12128963
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： C23C16/505 , C23F1/02
CPC分类号： H01J37/32935 , H01J37/32091 , H01J37/32183
摘要： In a plasma reactor employing source and bias RF power generators, plasma is stabilized against an engineered transient in the output of either the source or bias power generator by a compensating modulation in the other generator.
摘要翻译： 在采用源和偏压射频功率发生器的等离子体反应器中，等离子体通过在另一发生器中的补偿调制而在源极或偏置功率发生器的输出中的设计瞬态稳定。
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公开(公告)号：US08920597B2
公开(公告)日：2014-12-30
申请号：US13047052
申请日：2011-03-14
申请人： Kartik Ramaswamy , Igor Markovsky , Zhigang Chen , James D. Carducci , Kenneth S. Collins , Shahid Rauf , Nipun Misra , Leonid Dorf , Zheng John Ye
发明人： Kartik Ramaswamy , Igor Markovsky , Zhigang Chen , James D. Carducci , Kenneth S. Collins , Shahid Rauf , Nipun Misra , Leonid Dorf , Zheng John Ye
CPC分类号： H01J37/32091 , H01J37/32018 , H01J37/32082 , H01J37/32183 , H01J37/32541 , H01J37/32568 , H01J37/32577 , H01J37/32587 , H01J37/32596 , H01J37/3266 , H01J37/32715 , H01J37/32834
摘要： The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution.
摘要翻译： 本公开涉及一种通过具有折叠结构和对称功率分布的阻抗匹配同轴谐振器施加VHF功率的Capactively coupled等离子体源。
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136.发明授权公开(公告)号：US08878926B2
公开(公告)日：2014-11-04
申请号：US13236039
申请日：2011-09-19
IPC分类号： G01N25/72
CPC分类号： G01N25/72
摘要： Embodiments of the present invention provide methods and apparatus for analyzing thermal properties of bonding materials within a composite structure. One embodiment of the present invention provides an apparatus for analyzing thermal property of a bonding material within a structure. The apparatus comprises a structure support having a supporting surface configured to support the structure, a heat source configured to direct a heat flux to the structure supported by the supporting surface of the structure support, and a camera facing the structure supported on the structure support and configured to capture thermal images of the structure supported on the structure support.
摘要翻译： 本发明的实施例提供了用于分析复合结构内的接合材料的热性能的方法和装置。 本发明的一个实施例提供一种用于分析结构内的接合材料的热性能的装置。 该装置包括：结构支撑件，其具有构造成支撑该结构的支撑表面;热源，其构造成将热通量引导到由结构支撑件的支撑表面支撑的结构;以及面向支撑在结构支撑上的结构的照相机， 被配置为捕获支持在结构支撑上的结构的热图像。
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137.发明授权Efficient and accurate method for real-time prediction of the self-bias voltage of a wafer and feedback control of ESC voltage in plasma processing chamber 有权用于实时预测晶圆的自偏压和等离子体处理室中ESC电压的反馈控制的高效准确的方法公开(公告)号：US08313664B2
公开(公告)日：2012-11-20
申请号：US12623243
申请日：2009-11-20
申请人： Zhigang Chen , Shahid Rauf , Walter R. Merry , Leonid Dorf , Kartik Ramaswamy , Kenneth S. Collins
发明人： Zhigang Chen , Shahid Rauf , Walter R. Merry , Leonid Dorf , Kartik Ramaswamy , Kenneth S. Collins
IPC分类号： G01L21/30
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/3299 , H01L21/6833
摘要： In a plasma reactor having an electrostatic chuck, wafer voltage may be determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage may be used to accurately control the DC wafer clamping voltage.
摘要翻译： 在具有静电卡盘的等离子体反应器中，可以使用基于偏置输入的传输线特性的先前确定的常数，在偏置输入处的RF测量来确定晶片电压，并且该晶片电压可用于精确地控制DC晶片钳位电压 。
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138.发明申请公开(公告)号：US20120069174A1
公开(公告)日：2012-03-22
申请号：US13236039
申请日：2011-09-19
IPC分类号： H04N7/18
CPC分类号： G01N25/72
摘要： Embodiments of the present invention provide methods and apparatus for analyzing thermal properties of bonding materials within a composite structure. One embodiment of the present invention provides an apparatus for analyzing thermal property of a bonding material within a structure. The apparatus comprises a structure support having a supporting surface configured to support the structure, a heat source configured to direct a heat flux to the structure supported by the supporting surface of the structure support, and a camera facing the structure supported on the structure support and configured to capture thermal images of the structure supported on the structure support.
摘要翻译： 本发明的实施例提供了用于分析复合结构内的接合材料的热性能的方法和装置。 本发明的一个实施例提供一种用于分析结构内的接合材料的热性能的装置。 该装置包括：结构支撑件，其具有构造成支撑该结构的支撑表面;热源，其构造成将热通量引导到由结构支撑件的支撑表面支撑的结构;以及面向支撑在结构支撑上的结构的照相机， 被配置为捕获支持在结构支撑上的结构的热图像。
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139.发明授权Method of plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator 有权通过不匹配的低功率RF发生器的同步调制，设计瞬变的等离子体负载阻抗调谐方法公开(公告)号：US08002945B2
公开(公告)日：2011-08-23
申请号：US12129024
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： C23F1/00
CPC分类号： H01J37/32146 , H01J37/32091 , H01J37/321 , H01J37/32183 , H01J37/32935
摘要： A method is provided in plasma processing of a workpiece for stabilizing the plasma against engineered transients in applied RF power, by modulating an unmatched low power RF generator in synchronism with the transient.
摘要翻译： 提供了一种用于通过与瞬态同步调制不匹配的低功率RF发生器的工件的等离子体处理中的方法来稳定等离子体以应用RF功率中的设计瞬变的方法。
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公开(公告)号：US20100248488A1
公开(公告)日：2010-09-30
申请号：US12711061
申请日：2010-02-23
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32165 , H01J37/32706
摘要： Radial distribution of etch rate is controlled by controlling the respective duty cycles of pulsed VHF source power applied to the ceiling and pulsed HF or MF bias power on the workpiece. Net average electrical charging of the workpiece is controlled by providing an electronegative process gas and controlling the voltage of a positive DC pulse on the workpiece applied during pulse off times of the pulsed VHF source power.
摘要翻译： 通过控制施加到天花板的脉冲VHF源功率和工件上的脉冲HF或MF偏置功率的相应占空比来控制蚀刻速率的径向分布。 通过提供电负性处理气体并控制在脉冲VHF源功率的脉冲关闭期间施加的工件上的正DC脉冲的电压来控制工件的净平均充电。
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