Semiconductor device with (110)-oriented silicon
    131.
    发明授权
    Semiconductor device with (110)-oriented silicon 有权
    具有(110)取向硅的半导体器件

    公开(公告)号:US08101500B2

    公开(公告)日:2012-01-24

    申请号:US12174030

    申请日:2008-07-16

    IPC分类号: H01L21/30

    摘要: A method of forming a semiconductor device on a heavily doped P-type (110) semiconductor layer over a metal substrate includes providing a first support substrate and forming a P-type heavily doped (110) silicon layer overlying the first support substrate. At least a top layer of the first support substrate is removable by a selective etching process with respect to the P-type heavily doped (110) silicon layer. A vertical semiconductor device structure is formed in and over the (110) silicon layer. The vertical device structure includes a top metal layer and is characterized by a current conduction in a direction. The method includes bonding a second support substrate to the top metal layer and removing the first support substrate using a mechanical grinding and a selective etching process to expose a surface of the P-type heavily doped (110) silicon layer and to allow a metal layer to be formed on the surface.

    摘要翻译: 在金属衬底上的重掺杂P型(110)半导体层上形成半导体器件的方法包括提供第一支撑衬底并形成覆盖在第一支撑衬底上的P型重掺杂(110)硅层。 至少第一支撑衬底的顶层可通过相对于P型重掺杂(110)硅层的选择性蚀刻工艺而移除。 在(110)硅层中和上方形成垂直半导体器件结构。 垂直装置结构包括顶部金属层,其特征在于沿<110>方向的电流传导。 该方法包括使用机械研磨和选择性蚀刻工艺将第二支撑衬底接合到顶部金属层并去除第一支撑衬底,以暴露P型重掺杂(110)硅层的表面并允许金属层 在表面上形成。

    THREE-DIMENSIONAL SEMICONDUCTOR DEVICE STRUCTURES AND METHODS
    132.
    发明申请
    THREE-DIMENSIONAL SEMICONDUCTOR DEVICE STRUCTURES AND METHODS 有权
    三维半导体器件结构与方法

    公开(公告)号:US20110298047A1

    公开(公告)日:2011-12-08

    申请号:US13212175

    申请日:2011-08-18

    申请人: Qi Wang

    发明人: Qi Wang

    IPC分类号: H01L21/768 H01L27/088

    摘要: A three-dimensional semiconductor device includes a first semiconductor device, a second semiconductor device, and a patterned conductive layer disposed between the first and the second semiconductor devices. The first semiconductor device has a first plurality of terminals on a front side of the first semiconductor device and a first metal substrate on its back side, wherein one of the first plurality of terminals in the first semiconductor device is electrically coupled to the first metal substrate. The second semiconductor device has a second plurality of terminals on a front side of the second semiconductor device and a second metal substrate on its back side, wherein the second semiconductor device further includes a second metal substrate on its back side. The patterned conductive layer includes a plurality of conductive regions. Each of the conductive regions is bonded to a conductor coupled to one of the first plurality of terminals and another conductor coupled to one of the second plurality of terminals.

    摘要翻译: 三维半导体器件包括第一半导体器件,第二半导体器件和设置在第一和第二半导体器件之间的图案化导电层。 第一半导体器件在第一半导体器件的前侧具有第一多个端子,在其背面具有第一金属基板,其中第一半导体器件中的第一多个端子中的一个电连接到第一金属基板 。 第二半导体器件在第二半导体器件的前侧具有第二多个端子,在其后侧具有第二金属基板,其中第二半导体器件在其后侧还包括第二金属基板。 图案化导电层包括多个导电区域。 每个导电区域被结合到耦合到第一多个端子中的一个的导体和耦合到第二多个端子中的一个的另一个导体。

    HIGH SENSITIVITY, SOLID STATE NEUTRON DETECTOR
    133.
    发明申请
    HIGH SENSITIVITY, SOLID STATE NEUTRON DETECTOR 有权
    高灵敏度,固态中性探测器

    公开(公告)号:US20110284755A1

    公开(公告)日:2011-11-24

    申请号:US13146780

    申请日:2009-01-30

    IPC分类号: G01T3/08 H01L21/28

    摘要: An apparatus (200) for detecting slow or thermal neutrons (160) including an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel. The neutron conversion layer (860) may be deposited on the contact pixels (830) such as with use of inkjet printing of nanoparticle ink.

    摘要翻译: 一种用于检测包括作为氢化非晶硅p-i-n二极管结构的α粒子检测层(240)的慢或热中子(160)的装置(200)。 该装置包括底部金属触点(220)和顶部金属触点(250),二极管结构(240)位于两个触点(220,250)之间,以便于检测α粒子(170)。 装置(200)包括由含有硼-10同位素的材料形成的中子转换层(230)。 顶部接触(250)被像素化,每个接触像素延伸到或靠近设备的边缘以促进电接触。 接触像素具有细长体以允许它们跨越装置表面(242)延伸,每个像素具有小的表面积,以基于连接到每个像素的电流尖峰检测电路或放大器匹配电容。 中子转换层(860)可以沉积在接触像素(830)上,例如使用纳米颗粒油墨的喷墨印刷。

    System and Method for Matching Targeted Advertisements for Video Content Delivery
    134.
    发明申请
    System and Method for Matching Targeted Advertisements for Video Content Delivery 有权
    用于匹配视频内容传送的目标广告的系统和方法

    公开(公告)号:US20110185381A1

    公开(公告)日:2011-07-28

    申请号:US12958102

    申请日:2010-12-01

    IPC分类号: H04N7/025

    摘要: In accordance with an embodiment, a method of matching video content to advertising content includes electronically receiving a video content metadata from a content provider, and matching the video content metadata to advertising content metadata of a global list of advertisements. The video content metadata corresponds to video content being sent to a user device and includes at least one keyword. Furthermore, the advertising content metadata corresponds to advertising content and includes at least one keyword. Matching the video content metadata to advertising content metadata includes comparing the at least one keyword of the video content metadata to the at least one keyword of the advertising content metadata.

    摘要翻译: 根据实施例,将视频内容与广告内容相匹配的方法包括从内容提供商电子地接收视频内容元数据,并且将视频内容元数据与全球广告列表的广告内容元数据相匹配。 视频内容元数据对应于被发送到用户设备的视频内容,并且包括至少一个关键字。 此外,广告内容元数据对应于广告内容,并且包括至少一个关键字。 将视频内容元数据与广告内容元数据相匹配包括将视频内容元数据的至少一个关键字与广告内容元数据的至少一个关键字进行比较。

    Method of secure communication between endpoints
    135.
    发明授权
    Method of secure communication between endpoints 有权
    端点之间安全通信的方法

    公开(公告)号:US07934088B2

    公开(公告)日:2011-04-26

    申请号:US11587562

    申请日:2005-03-31

    申请人: Qi Wang

    发明人: Qi Wang

    摘要: The method of secure communication between the endpoints is used for the secret communication between endpoints locating in different gatekeeper management area, and the method includes: in the process of the caller endpoint calling the callee endpoint, the home gatekeeper of the callee endpoint generates the share secret key between the caller endpoint and the callee endpoint; the secure communication process is performed between the caller endpoint and the callee endpoint according to the share secret key. According to the secure communication method between the endpoints, the invention makes that secret communication mechanism between the endpoints locating the different gatekeeper management area has better expansibility and higher efficiency.

    摘要翻译: 端点之间的安全通信方法用于定位在不同网守管理区域的端点之间的秘密通信,该方法包括:在主叫端点呼叫被叫端点的过程中,被叫方端点的归属网守产生共享 主叫端点和被叫终端之间的秘密密钥; 根据共享秘密密钥在呼叫者端点和被叫方端点之间执行安全通信处理。 根据端点之间的安全通信方式,本发明使定位不同网守管理区域的端点之间的秘密通信机制具有更好的可扩展性和更高的效率。

    Generating laser pulses of prescribed pulse shapes programmed through combination of separate electrical and optical modulators
    137.
    发明授权
    Generating laser pulses of prescribed pulse shapes programmed through combination of separate electrical and optical modulators 有权
    通过单独的电和光调制器的组合产生规定脉冲形状的激光脉冲

    公开(公告)号:US07813389B2

    公开(公告)日:2010-10-12

    申请号:US12268203

    申请日:2008-11-10

    IPC分类号: H01S3/30 H01S3/10 H01S3/13

    摘要: A programmable laser pulse combines electrical modulation of the pulse frequency and optical modulation of the pulse shape to form laser pulses of prescribed pulse shapes. A prescribed pulse shape features high peak power and low average power. The laser system disclosed also allows for power-scaling and nonlinear conversions to other (shorter or longer) wavelengths. The system provides an economical reliable alternative to using a laser source with high repetition rates to achieve shaped pulses at a variety of wavelengths. The combinatorial scheme disclosed is inherently more efficient than existing subtractive methods.

    摘要翻译: 可编程激光脉冲组合脉冲频率的电调制和脉冲形状的光调制形成规定脉冲形状的激光脉冲。 规定的脉冲形状具有高峰值功率和低平均功率。 所公开的激光系统还允许对其它(更短或更长)波长进行功率缩放和非线性转换。 该系统提供了使用具有高重复率的激光源实现各种波长的成形脉冲的经济可靠的替代方案。 所公开的组合方案固有地比现有的减法方法更有效。

    ORYZA SATIVA LTP PROMOTERS USEFUL FOR MODULATING GENE EXPRESSION IN PLANTS
    138.
    发明申请
    ORYZA SATIVA LTP PROMOTERS USEFUL FOR MODULATING GENE EXPRESSION IN PLANTS 审中-公开
    ORYZA SATIVA LTP促进剂用于调节植物中的基因表达

    公开(公告)号:US20100197498A1

    公开(公告)日:2010-08-05

    申请号:US12684100

    申请日:2010-01-07

    CPC分类号: C12N15/8227 C12N15/8235

    摘要: The present invention provides non-coding regulatory element polynucleotide molecules isolated from the lipid transfer protein (LTP) gene of Oryza sativa and useful for expressing transgenes in plants. The invention further discloses compositions, polynucleotide constructs, transformed host cells, transgenic plants and seeds containing the Oryza sativa regulatory polynucleotide sequences, and methods for preparing and using the same.

    摘要翻译: 本发明提供从Oryza sativa的脂质转移蛋白(LTP)基因分离的非编码调节元件多核苷酸分子,并且可用于在植物中表达转基因。 本发明还公开了组合物,多核苷酸构建体,转化的宿主细胞,转基因植物和含有水稻调节多核苷酸序列的种子,以及制备和使用该方法。

    Bandgap engineered MOS-gated power transistors
    139.
    发明授权
    Bandgap engineered MOS-gated power transistors 有权
    带隙工程MOS门控功率晶体管

    公开(公告)号:US07755137B2

    公开(公告)日:2010-07-13

    申请号:US11245995

    申请日:2005-10-07

    申请人: Gary Dolny Qi Wang

    发明人: Gary Dolny Qi Wang

    IPC分类号: H01L29/76

    摘要: Devices, methods, and processes that improve immunity to transient voltages and reduce parasitic impedances. Immunity to unclamped inductive switching events is improved. For example, a trench-gated power MOSFET device having a SiGe source is provided, where the SiGe source reduces parasitic npn transistor gain by reducing hole current in the body or well region, thereby decreasing the likelihood of a latch-up condition. A body tie on this device can also be eliminated to reduce transistor cell size. A trench-gated power MOSFET device having a SiGe body or well region is also provided. A SiGe body reduces hole current when the body diode is turned on, thereby reducing reverse recovery power losses. Device characteristics are also improved. For example, parasitic gate impedance is reduced through the use of a poly SiGe gate, and channel resistance is reduced through the use of a SiGe layer near the device's gate.

    摘要翻译: 提高对瞬态电压的抗扰度并减少寄生阻抗的器件,方法和过程。 提高对松开感应开关事件的抗扰度。 例如,提供了具有SiGe源的沟槽门控功率MOSFET器件,其中SiGe源通过减少主体或阱区中的空穴电流来降低寄生npn晶体管增益,从而降低闩锁状态的可能性。 也可以消除该器件上的身体接合以减少晶体管电池尺寸。 还提供了具有SiGe体或阱区的沟槽栅功率MOSFET器件。 当体二极管导通时,SiGe体减小空穴电流,从而降低反向恢复功率损耗。 设备特性也得到改善。 例如,通过使用多晶硅栅极减少寄生栅极阻抗,并且通过在器件栅极附近使用SiGe层来减小沟道电阻。

    GENERATING LASER PULSES OF PRESCRIBED PULSE SHAPES PROGRAMMED THROUGH COMBINATION OF SEPARATE ELECTRICAL AND OPTICAL MODULATORS
    140.
    发明申请
    GENERATING LASER PULSES OF PRESCRIBED PULSE SHAPES PROGRAMMED THROUGH COMBINATION OF SEPARATE ELECTRICAL AND OPTICAL MODULATORS 有权
    通过单独电气和光学调制器的组合生成规定的脉冲形状的激光脉冲

    公开(公告)号:US20100118899A1

    公开(公告)日:2010-05-13

    申请号:US12268203

    申请日:2008-11-10

    IPC分类号: H01S3/10

    摘要: A programmable laser pulse combines electrical modulation of the pulse frequency and optical modulation of the pulse shape to form laser pulses of prescribed pulse shapes. A prescribed pulse shape features high peak power and low average power. The laser system disclosed also allows for power-scaling and nonlinear conversions to other (shorter or longer) wavelengths. The system provides an economical reliable alternative to using a laser source with high repetition rates to achieve shaped pulses at a variety of wavelengths. The combinatorial scheme disclosed is inherently more efficient than existing subtractive methods.

    摘要翻译: 可编程激光脉冲组合脉冲频率的电调制和脉冲形状的光调制形成规定脉冲形状的激光脉冲。 规定的脉冲形状具有高峰值功率和低平均功率。 所公开的激光系统还允许对其它(更短或更长)波长进行功率缩放和非线性转换。 该系统提供了使用具有高重复率的激光源实现各种波长的成形脉冲的经济可靠的替代方案。 所公开的组合方案固有地比现有的减法方法更有效。