公开(公告)号：US09200368B2

公开(公告)日：2015-12-01

申请号：US13207227

申请日：2011-08-10

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： C23C16/455 ,  C23C16/34 ,  C23C16/509 ,  H01J37/32

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US09123707B2

公开(公告)日：2015-09-01

申请号：US13214161

申请日：2011-08-20

申请人： Soo Young Choi

发明人： Soo Young Choi

IPC分类号： H01L21/314 ,  H01L21/318 ,  H01L21/316 ,  H01L29/49 ,  C23C16/30 ,  C23C16/40 ,  H01J37/32 ,  H01L29/45 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L27/12

CPC分类号： H01L29/4908 ,  C23C16/308 ,  C23C16/402 ,  H01J37/32357 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L27/1248 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78693

摘要： Embodiments of the disclosure generally provide methods of forming a hydrogen free silicon containing layer in TFT devices. The hydrogen free silicon containing layer may be used as a passivation layer, a gate dielectric layer, an etch stop layer, or other suitable layers in TFT devices, photodiodes, semiconductor diode, light-emitting diode (LED), or organic light-emitting diode (OLED), or other suitable display applications. In one embodiment, a method for forming a hydrogen free silicon containing layer in a thin film transistor includes supplying a gas mixture comprising a hydrogen free silicon containing gas and a reacting gas into a plasma enhanced chemical vapor deposition chamber, wherein the hydrogen free silicon containing gas is selected from a group consisting of SiF4, SiCl4, Si2Cl6, and forming a hydrogen free silicon containing layer on the substrate in the presence of the gas mixture.

摘要翻译： 本公开的实施方案通常提供在TFT器件中形成无氢硅含量层的方法。 不含氢的含硅层可用作TFT器件，光电二极管，半导体二极管，发光二极管（LED）或有机发光二极管中的钝化层，栅极介电层，蚀刻停止层或其他合适的层 二极管（OLED）或其他合适的显示应用。 在一个实施例中，在薄膜晶体管中形成无氢硅含量层的方法包括将包含无氢硅的气体和反应气体的气体混合物供应到等离子体增强化学气相沉积室中，其中含有 气体选自由SiF 4，SiCl 4，Si 2 Cl 6组成的组，并且在气体混合物的存在下在衬底上形成无氢的含硅层。

公开(公告)号：USD713200S1

公开(公告)日：2014-09-16

申请号：US29430967

申请日：2012-08-31

申请人： Gaku Furuta ,  John M. White ,  Robin L. Tiner ,  Suhail Anwar ,  Soo Young Choi

设计人： Gaku Furuta ,  John M. White ,  Robin L. Tiner ,  Suhail Anwar ,  Soo Young Choi

公开(公告)号：US08795793B2

公开(公告)日：2014-08-05

申请号：US12254742

申请日：2008-10-20

申请人： Soo Young Choi ,  John M. White ,  Robert I. Greene

发明人： Soo Young Choi ,  John M. White ,  Robert I. Greene

IPC分类号： H05H1/24 ,  C23C16/00 ,  C23C16/455

CPC分类号： C23C16/45559 ,  B05B1/005 ,  C23C16/4405 ,  C23C16/45565 ,  H01J37/3244

摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. At least one of the gas passages has a right cylindrical shape for a portion of its length extending from the upstream side and a coaxial conical shape for the remainder length of the diffuser plate, the upstream end of the conical portion having substantially the same diameter as the right cylindrical portion and the downstream end of the conical portion having a larger diameter. The gas distribution plate is relatively easy to manufacture and provides good chamber cleaning rate, good thin film deposition uniformity and good thin film deposition rate. The gas distribution plate also has the advantage of reduced chamber cleaning residues on the diffuser surface and reduced incorporation of the cleaning residues in the thin film being deposited.

摘要翻译： 提供了用于在处理室中分配气体的气体分配板的实施例。 在一个实施例中，气体分配板包括具有上游侧和下游侧的扩散板和通过扩散板的上游侧和下游侧之间的多个气体通道。 气体通道中的至少一个具有从上游侧延伸的一部分长度的右圆柱形状，并且对于扩散板的剩余长度为同轴圆锥形，锥形部分的上游端具有与 锥形部分的右圆柱形部分和下游端具有较大的直径。 气体分配板相对容易制造，提供良好的室清洁率，良好的薄膜沉积均匀性和良好的薄膜沉积速率。 气体分配板还具有减小扩散器表面上的室清洁残留物的优点，并且减少了沉积在薄膜中的清洁残余物的结合。

公开(公告)号：US08721791B2

公开(公告)日：2014-05-13

申请号：US13163241

申请日：2011-06-17

申请人： Robin L. Tiner ,  Soo Young Choi ,  Qunhua Wang ,  Jrjyan Jerry Chen

发明人： Robin L. Tiner ,  Soo Young Choi ,  Qunhua Wang ,  Jrjyan Jerry Chen

IPC分类号： C23C16/455 ,  H01J37/32

CPC分类号： B05B1/005 ,  C23C16/45565 ,  H01J37/3244

摘要： Embodiments of the present invention generally provide apparatus and methods for supporting a gas distribution showerhead in a processing chamber. In one embodiment, a gas distribution showerhead for a vacuum chamber is provided. The gas distribution showerhead comprises a body having a first side and a second side opposite the first side, and a plurality of gas passages formed through the body, the gas passages comprising a first bore formed in the first side that is fluidly coupled to a second bore formed in the second side by a restricting orifice, and a suspension feature formed in the first bore of at least one of the gas passages.

摘要翻译： 本发明的实施例通常提供用于在处理室中支撑气体分配喷头的装置和方法。 在一个实施例中，提供了一种用于真空室的气体分配喷头。 所述气体分配喷头包括具有第一侧和与所述第一侧相对的第二侧的主体和穿过所述主体形成的多个气体通道，所述气体通道包括形成在所述第一侧中的第一孔，所述第一孔流体地联接到第二侧 通过限制孔形成在第二侧中的孔，以及形成在至少一个气体通道的第一孔中的悬挂特征。

公开(公告)号：USD680946S1

公开(公告)日：2013-04-30

申请号：US29353504

申请日：2010-01-09

申请人： Suhail Anwar ,  John M. White ,  Soo Young Choi ,  Gaku Furuta ,  Shinichi Kurita ,  Carl Sorenson ,  Robin L. Tiner

设计人： Suhail Anwar ,  John M. White ,  Soo Young Choi ,  Gaku Furuta ,  Shinichi Kurita ,  Carl Sorenson ,  Robin L. Tiner

公开(公告)号：US08430961B2

公开(公告)日：2013-04-30

申请号：US12205363

申请日：2008-09-05

申请人： Beom Soo Park ,  Young Jin Choi ,  Robin L. Tiner ,  Sam H. Kim ,  Soo Young Choi ,  John M. White ,  Dong-Kil Yim

发明人： Beom Soo Park ,  Young Jin Choi ,  Robin L. Tiner ,  Sam H. Kim ,  Soo Young Choi ,  John M. White ,  Dong-Kil Yim

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： C23C16/45502 ,  C23C16/4401

摘要： The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.

摘要翻译： 本发明通常包括一种用于将处理气体的流动引导离开室壁和狭缝阀开口的方法和装置。 通过控制处理室内的处理气体的流动路径，可以减少在室壁上和狭缝阀开口内的不期望的沉积。 通过减少狭缝阀开口中的沉积，可能会降低剥落。 通过减少室壁上的沉积，可以增加室清洁之间的时间。 因此，引导处理室内的处理气体的流动可以增加衬底生产量。

公开(公告)号：US20130087783A1

公开(公告)日：2013-04-11

申请号：US13630901

申请日：2012-09-28

申请人： Qunhua Wang ,  Weijie Wang ,  Young Jin Choi ,  Seon-Mee Cho ,  Yi Cui ,  Beom Soo Park ,  Soo Young Choi

发明人： Qunhua Wang ,  Weijie Wang ,  Young Jin Choi ,  Seon-Mee Cho ,  Yi Cui ,  Beom Soo Park ,  Soo Young Choi

IPC分类号： H01L21/316 ,  H01L21/31 ,  H01L29/786

CPC分类号： H01L21/31 ,  C23C16/24 ,  C23C16/345 ,  C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/02675 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/7869 ,  H01L2021/775

摘要： Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.

摘要翻译： 本公开的实施例通常提供在TFT器件中形成含硅层的方法。 硅可用于在LTPS TFT中形成有源沟道，或者用作栅极介电层，钝化层或甚至蚀刻停止层中的元素。 通过气相沉积工艺沉积含硅层，由此惰性气体如氩气与硅前体一起引入。 惰性气体起到驱除弱的，悬挂的硅 - 氢键或硅 - 硅键的作用，使得强硅硅或硅 - 氧键保留以形成基本上不含氢的含硅层。

公开(公告)号：US20130068161A1

公开(公告)日：2013-03-21

申请号：US13538389

申请日：2012-06-29

申请人： John M. White ,  Suhail Anwar ,  Jozef Kudela ,  Carl A. Sorensen ,  Tae K. Won ,  Seon-Mee Cho ,  Soo Young Choi ,  Beom Soo Park ,  Benjamin M. Johnston

发明人： John M. White ,  Suhail Anwar ,  Jozef Kudela ,  Carl A. Sorensen ,  Tae K. Won ,  Seon-Mee Cho ,  Soo Young Choi ,  Beom Soo Park ,  Benjamin M. Johnston

IPC分类号： C23C16/455 ,  B05B1/14

CPC分类号： C23C16/455 ,  C23C16/45578 ,  C23C16/4587 ,  C23C16/511 ,  C23C16/513 ,  C23C16/54

摘要： An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle.

摘要翻译： 一种用于将气体引入处理室的装置，包括一个或多个具有气体注入孔的气体分配管，所述气体分配管的尺寸更大，数量更多，和/或在气体导入管的部分处更靠近在一起，其中较大的气体导通通过 需要喷气孔。 具有较大气体注入孔的外管可围绕每个气体分配管。 气体分配管可以流体连接到真空前级管线，以便于在处理循环结束时从气体分配管中除去气体。

公开(公告)号：US08385166B2

公开(公告)日：2013-02-26

申请号：US12017657

申请日：2008-01-22

申请人： Soo Young Choi

发明人： Soo Young Choi

IPC分类号： G11B5/09

CPC分类号： G11B5/59627

摘要： A method to compensate repeatable run out of a hard disk drive apparatus includes receiving a write or read command to write or read data with respect to a disk having an inner diameter (ID) area, a middle diameter (MD) area, and an outer diameter (OD) area which are preset, determining a present position of a magnetic head and a position where the magnetic head writes or read data, stopping an operation of at least one of RRO compensators for RRO components of particular frequencies when the present position of the magnetic head is the ID area and the position where the magnetic head writes or reads the data is the MD area or OD area of the disk, and performing data writing or reading by performing seeking and settling of the magnetic head.

摘要翻译： 一种用于补偿硬盘驱动装置可重复耗尽的方法包括：接收写入或读取命令，以相对于具有内径（ID）区域，中间直径（MD）区域和外部区域的盘的数据写入或读取数据 预定的直径（OD）区域，确定磁头的当前位置和磁头写入或读取数据的位置，当当前位置的RRO分量的至少一个RRO补偿器对于特定频率的RRO分量的操作停止时， 磁头是ID区域，磁头写入或读取数据的位置是磁盘的MD区域或OD区域，并且通过执行磁头的寻找和稳定来执行数据写入或读取。