公开(公告)号：US20130193308A1

公开(公告)日：2013-08-01

申请号：US13724244

申请日：2012-12-21

Applicant: Arizona Board of Regents, a body corporate of the State of Arizona, acting for and on behalf of Arizona State

Inventor： Oray Orkun Cellek ,  Yong-Hang Zhang

IPC: H01L27/146 ,  H01L27/144

CPC classification number: H01L27/14621 ,  H01L27/144 ,  H01L31/02019 ,  H01L31/1013 ,  H01L31/105 ,  H01L31/109

Abstract: Multi-band photodetectors can be formed by series connecting unipolar and, optionally, bipolar semiconductor structures, each having different photodetection bands. Under default mode of operation, the detector with highest resistance and lowest current will be the current limiting device and will be the active photodetector. When the active photodetector is illuminated with strong light in its own detection band it will be optically biased. This active photodetector will no longer be the highest resistance device, and the next photodetector will be the active photodetector. Repeating this operation pattern, allows switching photodetection bands of the multi-band photodetector. The resistances, dark current and photocurrent of the devices should be engineered to have proper switching. Moreover, the illuminating surface, and photodetector placement should be optimized for proper light biasing. The current passing through the device will always be equal to the current of the active photodetector.

Abstract translation: 多波段光电检测器可以通过串联连接单极和可选地双极半导体结构形成，每个具有不同的光电检测带。 在默认工作模式下，具有最高电阻和最低电流的检测器将是限流装置，并将作为有源光电检测器。 当有源光电探测器在其自身的检测带中用强光照射时，它将被光学偏置。 该有源光电检测器将不再是最高电阻器件，下一个光检测器将是有源光电检测器。 重复该操作模式，允许多频带光电探测器的开关光电检测带。 设备的电阻，暗电流和光电流应设计为具有适当的开关。 此外，应优化照明表面和光电检测器放置以适当的光偏置。 通过器件的电流将始终等于有源光电检测器的电流。

公开(公告)号：US20130153752A1

公开(公告)日：2013-06-20

申请号：US13711467

申请日：2012-12-11

Applicant: CANON KABUSHIKI KAISHA

Inventor： Katsuhito Sakurai

IPC: H01L27/144 ,  H02J4/00

CPC classification number: H01L27/144 ,  H01L27/14605 ,  H01L27/14612 ,  H01L27/1464 ,  H02J4/00 ,  H04N5/3575 ,  H04N5/3658 ,  H04N5/3742 ,  H04N5/378 ,  Y10T307/707

Abstract: An electronic device according to one or more embodiments of the invention comprises a plurality of first output lines and a plurality of current to voltage convertors. Current signals from a plurality of signal sources are output to the first output lines. Each of the current to voltage convertors are electrically connected to a corresponding one of the first output lines. The current to voltage convertor includes a first amplification unit. An offset reduction unit in a subsequent stage of the current to voltage convertor is provided for each of the first output lines.

Abstract translation: 根据本发明的一个或多个实施例的电子设备包括多个第一输出线和多个电流到电压转换器。 来自多个信号源的电流信号被输出到第一输出线。 每个电流到电压转换器电连接到相应的一个第一输出线。 电流到电压转换器包括第一放大单元。 为每个第一输出线提供电流对电压转换器的后续级中的偏移减小单元。

公开(公告)号：US08405115B2

公开(公告)日：2013-03-26

申请号：US12361426

申请日：2009-01-28

Applicant: Arkadii V. Samoilov ,  Albert Bergemont ,  Chiung-C. Lo ,  Prashanth Holenarsipur ,  James Patrick Long

Inventor： Arkadii V. Samoilov ,  Albert Bergemont ,  Chiung-C. Lo ,  Prashanth Holenarsipur ,  James Patrick Long

IPC: H01L33/00

CPC classification number: H01L31/18 ,  H01L27/144 ,  H01L31/101 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/051 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/056 ,  H01L2224/13 ,  H01L2924/00014

Abstract: The present invention provides systems, devices and methods for fabricating miniature low-power light sensors. With the present invention, a light sensitive component, such as a diode, is fabricated on the front side of a silicon wafer. Connectivity from the front side of the wafer to the back side of the wafer is provided by a through silicon via. Solder bumps are then placed on the back side of the wafer to provide coupling to a printed circuit board. The techniques described in the present invention may also be applied to other types of semiconductor devices, such as light-emitting diodes, image sensors, pressure sensors, and flow sensors.

Abstract translation: 本发明提供用于制造微型低功率光传感器的系统，装置和方法。 利用本发明，在硅晶片的正面上制造诸如二极管的光敏元件。 从晶片的前侧到晶片的背面的连接通过硅通孔提供。 然后将焊料凸块放置在晶片的背面，以提供与印刷电路板的耦合。 本发明中描述的技术也可以应用于其他类型的半导体器件，例如发光二极管，图像传感器，压力传感器和流量传感器。

公开(公告)号：US08346026B2

公开(公告)日：2013-01-01

申请号：US12517802

申请日：2007-08-07

Applicant: Jeong-Woo Park ,  Gyungock Kim ,  Young-Ahn Leem ,  Hyun-Soo Kim ,  Bongki Mheen

Inventor： Jeong-Woo Park ,  Gyungock Kim ,  Young-Ahn Leem ,  Hyun-Soo Kim ,  Bongki Mheen

IPC: G02F1/035 ,  G02B6/12 ,  G02B6/00

CPC classification number: H01L31/12 ,  H01L27/144

Abstract: Provided are a photoelectric device using a PN diode and a silicon integrated circuit (IC) including the photoelectric device. The photoelectric device includes: a substrate; and an optical waveguide formed as a PN diode on the substrate, wherein a junction interface of the PN diode is formed in a direction in which light advances; and an electrode applying a reverse voltage to the PN diode, wherein N-type and P-type semiconductors of the PN diode are doped at high concentrations and the doping concentration of the N-type semiconductor is higher than or equal to that of the P-type semiconductor.

Abstract translation: 提供了使用PN二极管的光电装置和包括光电装置的硅集成电路（IC）。 光电装置包括：基板; 以及在所述衬底上形成为PN二极管的光波导，其中所述PN二极管的结界面沿光前进的方向形成; 以及向PN二极管施加反向电压的电极，其中PN二极管的N型和P型半导体以高浓度掺杂，并且N型半导体的掺杂浓度高于或等于P 型半导体。

公开(公告)号：US08212214B2

公开(公告)日：2012-07-03

申请号：US13052903

申请日：2011-03-21

Applicant: Hiroto Honda ,  Hideyuki Funaki

Inventor： Hiroto Honda ,  Hideyuki Funaki

IPC: G01J5/00 ,  G01J5/20

CPC classification number: G01V8/10 ,  G01J5/20 ,  G01J5/22 ,  G01J2005/0077 ,  H01L27/144 ,  H01L31/101 ,  H04N5/33

Abstract: It is possible to quickly and readily determine the location of an object. A solid-state imaging element according to an embodiment includes: at least two infrared detectors formed on a semiconductor substrate; an electric interconnect configured to connect the at least two infrared detectors in series; and a comparator unit configured to compare an intermediate voltage of the electric interconnect connecting the infrared detectors in series, with a predetermined reference voltage.

Abstract translation: 可以快速，容易地确定对象的位置。 根据实施例的固态成像元件包括：形成在半导体衬底上的至少两个红外检测器; 配置为串联连接所述至少两个红外检测器的电互连; 以及比较器单元，被配置为将连接红外线检测器的电气互连串联的中间电压与预定的参考电压进行比较。

公开(公告)号：US08120060B2

公开(公告)日：2012-02-21

申请号：US11591383

申请日：2006-11-01

Applicant: Eugene A. Fitzgerald

Inventor： Eugene A. Fitzgerald

IPC: H01L29/66

CPC classification number: H01L27/14601 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/76254 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/144 ,  H01L27/1446 ,  H01L27/14683 ,  H01L27/15 ,  H01L27/156 ,  H01L31/0328 ,  H01L31/143 ,  H01L31/162 ,  H01L2924/0002 ,  Y10S438/933 ,  H01L2924/00

Abstract: Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a monolithically integrated semiconductor device structure comprises a silicon substrate and a first monocrystalline semiconductor layer disposed over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon. The structure also includes an insulating layer disposed over the first monocrystalline semiconductor layer in a first region and a monocrystalline silicon layer disposed over the insulating layer in the first region. The structure includes at least one silicon-based electronic device comprising an element including at least a portion of the monocrystalline silicon layer. The structure includes a second monocrystalline semiconductor layer disposed over at least a portion of the first monocrystalline semiconductor layer in a second region and absent from the first region, wherein the second monocrystalline semiconductor layer has a lattice constant different from the lattice constant of relaxed silicon. The structure also includes at least one III-V electronic device comprising an element including at least a portion of the second monocrystalline semiconductor layer.

Abstract translation: 提供了单晶硅和单晶非硅材料和器件单片集成的方法和结构。 在一种结构中，单片集成半导体器件结构包括硅衬底和设置在硅衬底上的第一单晶半导体层，其中第一单晶半导体层具有与松弛硅的晶格常数不同的晶格常数。 该结构还包括设置在第一区域中的第一单晶半导体层上的绝缘层和设置在第一区域中的绝缘层上的单晶硅层。 该结构包括至少一个硅基电子器件，其包含至少部分单晶硅层的元件。 该结构包括第二单晶半导体层，其设置在第二区域中的第一单晶半导体层的至少一部分上且不存在于第一区域中，其中第二单晶半导体层具有与松弛硅的晶格常数不同的晶格常数。 该结构还包括至少一个III-V电子器件，其包括包含第二单晶半导体层的至少一部分的元件。

公开(公告)号：US08071415B2

公开(公告)日：2011-12-06

申请号：US12659601

申请日：2010-03-15

Applicant: Tomohiro Okamura ,  Masao Okihara

Inventor： Tomohiro Okamura ,  Masao Okihara

IPC: H01L21/00

CPC classification number: H01L27/14 ,  H01L27/144

Abstract: There is provided a method of fabricating a semiconductor device having plural light receiving elements, and having an amplifying element, the method including: a) forming an active region on the semiconductor substrate for configuring the amplifying element; b) forming a light receiving element region on the semiconductor substrate for forming the plural light receiving elements, with the active region acting as a reference for positioning; c) implanting an impurity into the light receiving element region; d) repeating the process b) and the process c) a number of times that equals a number of diffusion layers in the light receiving element region; e) after implanting the impurity, performing a drive-in process to carry out drive in of the semiconductor substrate; and f) the process e), forming an amplifying element forming process by implanting an impurity in the active region.

Abstract translation: 提供一种制造具有多个光接收元件并具有放大元件的半导体器件的方法，该方法包括：a）在半导体衬底上形成用于配置放大元件的有源区; b）在所述半导体衬底上形成用于形成所述多个光接收元件的受光元件区域，所述有源区域用作定位的基准; c）将杂质注入光接收元件区域; d）重复步骤b）和过程c）等于光接收元件区域中的多个扩散层的次数; e）在注入杂质之后，执行驱动工艺以进行半导体衬底的驱动; 和f）工艺e），通过在有源区中注入杂质形成放大元件形成工艺。

公开(公告)号：US20100248410A1

公开(公告)日：2010-09-30

申请号：US12659601

申请日：2010-03-15

Applicant: Tomohiro Okamura ,  Masao Okihara

Inventor： Tomohiro Okamura ,  Masao Okihara

IPC: H01L31/18

CPC classification number: H01L27/14 ,  H01L27/144

Abstract: There is provided a method of fabricating a semiconductor device having plural light receiving elements, and having an amplifying element, the method including: a) forming an active region on the semiconductor substrate for configuring the amplifying element; b) forming a light receiving element region on the semiconductor substrate for forming the plural light receiving elements, with the active region acting as a reference for positioning; c) implanting an impurity into the light receiving element region; d) repeating the process b) and the process c) a number of times that equals a number of diffusion layers in the light receiving element region; e) after implanting the impurity, performing a drive-in process to carry out drive in of the semiconductor substrate; and f) the process e), forming an amplifying element forming process by implanting an impurity in the active region.

Abstract translation: 提供一种制造具有多个光接收元件并具有放大元件的半导体器件的方法，该方法包括：a）在半导体衬底上形成用于配置放大元件的有源区; b）在所述半导体衬底上形成用于形成所述多个光接收元件的受光元件区域，所述有源区域用作定位的基准; c）将杂质注入光接收元件区域; d）重复步骤b）和过程c）等于光接收元件区域中的多个扩散层的次数; e）在注入杂质之后，执行驱动工艺以进行半导体衬底的驱动; 和f）工艺e），通过在有源区中注入杂质形成放大元件形成工艺。

公开(公告)号：US07759623B2

公开(公告)日：2010-07-20

申请号：US11568646

申请日：2005-05-05

Applicant: Masahiro Teshima ,  Razmik Mirzoyan ,  Boris Anatolievich Dolgoshein ,  Sergey Nikolaevich Klemin ,  Elena Viktorovna Popova ,  Leonid Anatolievich Filatov

Inventor： Masahiro Teshima ,  Razmik Mirzoyan ,  Boris Anatolievich Dolgoshein ,  Sergey Nikolaevich Klemin ,  Elena Viktorovna Popova ,  Leonid Anatolievich Filatov

IPC: H01J40/14

CPC classification number: H01L31/107 ,  H01L27/144 ,  H01L27/14643 ,  H01L31/115

Abstract: The invention relates to high-efficient light-recording detectors and can be used for nuclear and laser engineering, and in technical and medical tomography etc.The inventive silicon photoelectric multiplier (variant 1) comprising a p++ type conductivity substrate whose dope additive concentration ranges from 1018 to 1020 cm −3 and which consists of cells, each of which comprises a p− type conductivity epitaxial layer whose dope additive concentration is gradually changeable from 1018 to 1014 cm−3 and which is grown on the substrate, a p− type conductivity layer whose dope additive concentration ranges from 1015 to 1017 cm−3 and a n+ type conductivity layer whose dope additive concentration ranges from 1018 to 1020 cm−3, wherein a polysilicon resistor connecting the n+ type conductivity layer with a feed bar is arranged in each cell on a silicon oxide layer and separating elements are disposed between the cells. Said silicon photoelectric multiplier (variant 2) comprising a n− type conductivity substrate to which a p++-type conductivity whose dope additive concentration ranges from 1018-1020 cm−3 is applied and consists of cells, wherein in each cell a polysilicon resistor is placed on a silicon oxide layer and separating elements are disposed between the cells.

Abstract translation: 本发明涉及高效的光记录检测器，可用于核和激光工程，以及技术和医学断层摄影等。本发明的硅光电倍增器（变型1）包括p ++型电导率基底，其掺杂剂浓度范围为 1018〜1020cm -3，由电池组成，每个电池包括ap型导电外延层，其掺杂剂浓度从1018逐渐变化到1014cm-3，并且在衬底上生长，其中p型导电层 掺杂剂浓度范围为1015〜1017cm-3，掺杂浓度范围为1018〜1020cm-3的n +型导电层，其中，将n +型导电层与进料棒连接的多晶硅电阻布置在每个单元中 氧化硅层和分离元件设置在电池之间。 所述硅光电倍增器（变型2）包括一种导电衬底，其中施加掺杂浓度范围为1018-1020cm-3的p ++型电导率并由电池组成，其中在每个电池中放置多晶硅电阻器 氧化硅层和分离元件设置在电池之间。

公开(公告)号：US07720393B2

公开(公告)日：2010-05-18

申请号：US11826975

申请日：2007-07-19

Applicant: Katsuhiko Hakomori ,  Masakazu Horishita

Inventor： Katsuhiko Hakomori ,  Masakazu Horishita

IPC: H04B10/06

CPC classification number: H01L27/144 ,  H01L31/02002 ,  H04B10/40

Abstract: In an optical module in which a transmitter and a receiver that respectively outputs and receives optical signals are stored in a casing, the transmitter and the receiver are connected to a common power line and to a common ground line, and a ferrite bead is arranged on the ground line in the receiver. The ferrite bead absorbs a high-frequency current component out of components in an electric signal passing through the ground line on which the ferrite bead is arranged. An inductance component that evolves on a ground line and a power line of a light receiving element and oscillation of a series resonance circuit that is formed of a capacitance component of the light receiving element are suppressed to reduce crosstalk.

Abstract translation: 在分别输出和接收光信号的发射器和接收器存储在壳体中的光学模块中，发射器和接收器连接到公共电源线和公共接地线，铁氧体磁珠布置在 接收器中的接地线。 铁氧体磁珠通过穿过铁氧体磁珠的接地线的电信号中的部件中的高频电流分量吸收。 抑制在接地线和光接收元件的电力线上演化的电感分量和由光接收元件的电容分量形成的串联谐振电路的振荡，以减少串扰。