公开(公告)号：US20080239183A1

公开(公告)日：2008-10-02

申请号：US12150132

申请日：2008-04-24

Applicant: Fang-Chen Luo ,  Chang-Cheng Lo

Inventor： Fang-Chen Luo ,  Chang-Cheng Lo

IPC: G02F1/133

CPC classification number: G02F1/136213 ,  H01L27/12

Abstract: A stacked storage capacitor structure for use in each pixel of a TFT-LCD, wherein a first storage capacitor is formed by a first metal layer, a gate insulator layer and a second metal layer. The second capacitor is formed by the second metal layer, a passivation insulator layer and an ITO layer. The first metal layer and the ITO layer are joined together through a via hole which is etched in one insulator etching step during the overall fabrication process through both the gate insulator and the passivation insulator layers. As such, the two capacitors are connected in parallel in a stacked configuration. With the stacked storage capacitor structure, the charge storage capacity is increased without significantly affecting the aperture ratio of a pixel. The ITO and the pixel electrode can be different parts of an indium tine oxide layer deposited on the passivation insulator layer.

Abstract translation: 一种用于TFT-LCD的每个像素的堆叠存储电容器结构，其中第一存储电容器由第一金属层，栅极绝缘体层和第二金属层形成。 第二电容器由第二金属层，钝化绝缘体层和ITO层形成。 第一金属层和ITO层通过在通过栅极绝缘体和钝化绝缘体层的整个制造工艺中的一个绝缘体蚀刻步骤中被蚀刻的通孔而接合在一起。 这样，两个电容器以堆叠的方式并联连接。 利用堆叠的存储电容器结构，电荷存储容量增加而不显着影响像素的开口率。 ITO和像素电极可以是沉积在钝化绝缘体层上的铟氧化物层的不同部分。