公开(公告)号：US07989363B2

公开(公告)日：2011-08-02

申请号：US12259095

申请日：2008-10-27

申请人： David Gao ,  Mieno Fumitake

发明人： David Gao ,  Mieno Fumitake

IPC分类号： H01L21/31

CPC分类号： H01L21/31654 ,  H01L21/02233 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/28211 ,  H01L21/28282

摘要： A method for fabricating semiconductor devices, e.g., SONOS cell. The method includes providing a semiconductor substrate (e.g., silicon wafer, silicon on insulator) having a surface region, which has a native oxide layer. The method includes treating the surface region to a wet cleaning process to remove a native oxide layer from the surface region. In a specific embodiment, the method includes subjecting the surface region to an oxygen bearing environment and subjecting the surface region to a high energy electromagnetic radiation having wavelengths ranging from about 300 to about 800 nanometers for a time period of less than 10 milli-seconds to increase a temperature of the surface region to greater than 1000 Degrees Celsius. In a specific embodiment, the method causes formation of an oxide layer having a thickness of less than 10 Angstroms. In a preferred embodiment, the oxide layer is substantially free from pinholes and other imperfections. In a specific embodiment, the oxide layer is a gate oxide layer.

摘要翻译： 一种制造半导体器件的方法，例如SONOS电池。 该方法包括提供具有自然氧化物层的具有表面区域的半导体衬底（例如，硅晶片，绝缘体上硅）。 该方法包括将表面区域处理为湿清洗工艺以从表面区域去除自然氧化物层。 在一个具体实施方案中，该方法包括使表面区域承受含氧环境，并使表面区域经受波长为约300至约800纳米的高能电磁辐射，持续时间小于10毫秒至 将表面区域的温度增加到大于1000摄氏度。 在一个具体实施方案中，该方法导致形成厚度小于10埃的氧化物层。 在优选实施例中，氧化物层基本上没有针孔和其它缺陷。 在具体实施方案中，氧化物层是栅极氧化物层。

公开(公告)号：US20110053349A1

公开(公告)日：2011-03-03

申请号：US12842017

申请日：2010-07-22

申请人： DAVID GAO ,  Fumitake Mieno

发明人： DAVID GAO ,  Fumitake Mieno

IPC分类号： H01L21/322

CPC分类号： H01L21/268 ,  H01L21/02046 ,  H01L21/02057 ,  H01L21/02098 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823835 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7848 ,  Y10S134/902

摘要： A method for fabricating semiconductor devices, e.g., strained silicon MOS device, includes providing a semiconductor substrate (e.g., silicon wafer) having a surface region, which has one or more contaminants and an overlying oxide layer. The one or more contaminants is at least a carbon species. The method also includes processing the surface region using at least a wet process to selectively remove the oxide layer and expose the surface region. The method further includes subjecting the surface region to a laser treatment process for a time period of less than 1 second to increase a temperature of the surface region to greater than 1000 degrees Celsius to remove the one or more contaminants provided on the surface region. The method also includes removing the laser treatment process to cause a reduction in temperature to about 300 to about 600 degrees Celsius in a time period of less than 1 second.

摘要翻译： 制造半导体器件（例如应变硅MOS器件）的方法包括提供具有表面区域的半导体衬底（例如，硅晶片），该表面区域具有一个或多个污染物和上​​覆氧化物层。 一种或多种污染物是至少一种碳类。 该方法还包括使用至少湿法处理表面区域以选择性地去除氧化物层并暴露表面区域。 该方法还包括使表面区域进行激光处理过程，持续时间小于1秒，以将表面区域的温度升高至大于1000摄氏度，以去除表面区域上提供的一种或多种污染物。 该方法还包括去除激光处理过程，以在小于1秒的时间段内将温度降低至约300至约600摄氏度。

公开(公告)号：US20050207040A1

公开(公告)日：2005-09-22

申请号：US10803270

申请日：2004-03-19

申请人： Jason Gao ,  David Gao

发明人： Jason Gao ,  David Gao

IPC分类号： B60R1/10 ,  G02B5/08 ,  G02B7/182

CPC分类号： B60R1/10

摘要： A rear view mirror assembly for use internally in sedans, minivans, sport utility vehicles (SUVs), and other vehicles with a rear window to provide an improved view of the field below the rear window. The improved rear view enhances the safety of moving the vehicles backward or towing a trailer. The rear view mirror assembly consists of a convex mirror and a flat mirror, both located near the rear window. The convex mirror is mounted near the top of the rear window, facing the field below the rear window, while the flat mirror is mounted below the convex mirror to reflect the image of field below the rear window to the driver. The driver can view the image in the flat mirror directly while moving backward or through the regular main rear view mirror. The angles of the convex mirror and the flat mirror can be adjusted manually or electronically to meet the needs of different drivers.

摘要翻译： 一种用于轿车，小型货车，运动型多用途车（SUV）内部使用的后视镜组件，以及具有后窗的其他车辆，以提供后窗后方的改进视野。 改进的后视图增强了向后移动车辆或拖曳拖车的安全性。 后视镜组件由凸面镜和平面镜构成，均位于后窗附近。 凸面镜安装在后窗的顶部附近，面向后视窗下方的场地，而平面镜安装在凸面镜下方，以将后视窗下方的场景图像反映至驾驶员。 驾驶员可以在向后或通过正常的主后视镜直接观看平面镜中的图像。 凸面镜和平面镜的角度可以手动或电子调节，以满足不同驱动器的需要。

公开(公告)号：US20050171763A1

公开(公告)日：2005-08-04

申请号：US11026348

申请日：2004-12-30

申请人： Jin Feng Zhou ,  David Gao

发明人： Jin Feng Zhou ,  David Gao

IPC分类号： G11B20/10 ,  H04B1/69

CPC分类号： G11B20/10527 ,  G11B2020/00057

摘要： A decoding method for MP3 bit streams, which replaces a buffer required in the decoding process by manipulating the order of data decoding. The decoding method includes reading the head and side information of the current frame, and calculating a main data's start address of the current frame. While decoding the main data, the head and side information of subsequent frames are skipped if the reading of the main data is not yet completed. The start address of the next frame is calculated and directly accessed after finished reading the main data of the current frame. An optimum method for accessing frequency lines utilizes the characteristics of the MP3 frequency line, instead of inserting a plurality of zeros in the rzero zone containing successive zeros, the initial boundary address of the rzero zone is memorized.

摘要翻译： 一种用于MP3比特流的解码方法，其通过操纵数据解码的顺序来代替解码过程中所需的缓冲器。 解码方法包括读取当前帧的头部和侧面信息，以及计算当前帧的主数据的起始地址。 在解码主数据时，如果主数据的读取尚未完成，则跳过后续帧的头信息和侧信息。 在完成读取当前帧的主数据之后，计算下一帧的起始地址并直接访问。 用于访问频率线的最佳方法利用MP3频率线的特征，而不是在包含连续零的rzero区域中插入多个零，存储rzero区域的初始边界地址。