摘要:
A solid-state image capture device includes: a pixel section in which pixels are arranged in a matrix; control lines; a pixel drive section that performs control, through the control lines, an operation of the pixels so as to perform a shutter operation of the pixel section and so as to perform reading; a reading circuit that reads signals from the pixels; and a shutter-mode switching section that controls an operation of the pixel drive section in accordance with a rolling shutter system in which exposure is performed for each row or a global shutter system in which exposure is simultaneously performed on all the pixels. The pixel drive section includes a shutter-mode corresponding section that causes an impedance value from the control lines to a power supply in a global shutter operation to be greater than an impedance value in a rolling shutter operation.
摘要:
An electrostatic capacitance detection device for detecting electrostatic capacitance that changes in accordance with a distance from a target object to read surface contours of the target object, including electrostatic capacitance detection elements arranged in M rows and N columns, a power supply line supplying power to the electrostatic capacitance detection elements, an output line outputting a signal from the electrostatic capacitance detection elements, M row lines selecting the electrostatic capacitance detection elements disposed on a specific row, and N column lines selecting the electrostatic capacitance detection elements disposed on a specific column. The electrostatic capacitance detection elements each includes a) a signal detection element storing a charge in accordance with the electrostatic capacitance, b) a row selection element causing the electrostatic capacitance detection element to enter a selected state in response to a signal from the row line, c) a column selection element causing the electrostatic capacitance detection element to enter a selected state in response to a signal from the column line, and d) a signal amplification element amplifying a signal corresponding to the charge stored in the signal detection element. The signal detection element includes a capacitance detection electrode and a reference capacitor. The signal amplification element is a thin-film semiconductor device for signal amplification including a source electrode, a drain electrode and a gate electrode. The row selection element is a thin-film semiconductor device for row selection including a source electrode, a drain electrode and a gate electrode. The column selection element is a thin-film semiconductor device for column selection including a source electrode, a drain electrode and a gate electrode. The reference capacitor includes a reference capacitor first electrode, a reference capacitor dielectric film and a reference capacitor second electrode. The gate electrode of the thin-film semiconductor device for signal amplification, the capacitance detection electrode, and the reference capacitor second electrode are coupled to each other. The gate electrode of the thin-film semiconductor device for row selection is coupled to the row line. The gate electrode of the thin-film semiconductor device for column selection is coupled to the column line. The source electrode and the drain electrode of the thin-film semiconductor device for signal amplification, the source electrode and the drain electrode of the thin-film semiconductor device for row selection, and the source electrode and the drain electrode of the thin-film semiconductor device for column selection are coupled in series between the power supply line and the output line. On-resistance of the thin-film semiconductor device for row selection and on-resistance of the thin-film semiconductor device for column selection are smaller than on-resistance of the thin-film semiconductor device for signal amplification.
摘要:
A solid-state image capture device includes: a pixel section in which pixels are arranged in a matrix; control lines; a pixel drive section that performs control, through the control lines, an operation of the pixels so as to perform a shutter operation of the pixel section and so as to perform reading; a reading circuit that reads signals from the pixels; and a shutter-mode switching section that controls an operation of the pixel drive section in accordance with a rolling shutter system in which exposure is performed for each row or a global shutter system in which exposure is simultaneously performed on all the pixels. The pixel drive section includes a shutter-mode corresponding section that causes an impedance value from the control lines to a power supply in a global shutter operation to be greater than an impedance value in a rolling shutter operation.
摘要:
A solid-state imaging device includes: a pixel unit in which plural pixels each having a photoelectric conversion element which converts light signals into electric signals and accumulates the electric signals according to exposure time are arranged in a matrix state; plural control lines for drive controlling the pixels; and a pixel drive unit controlling operation of the pixels to perform electronic shutter operation and reading of the pixel unit through the control lines,wherein the pixel drive unit includes a function of outputting read row selection signals and shutter row selection signals of row addresses of read rows from which signals are read and shutter rows from which charges accumulated in the photoelectric conversion elements are swept out and reset in accordance with address signals, and a function of selecting plural successive rows by designating the lowest address signal and the highest address signal.
摘要:
A solid-state image pickup device includes a pixel unit in which a plurality of photoelectric conversion elements having different sensitivities are arranged; and a pixel reading unit configured to read and add output signals from the plurality of photoelectric conversion elements in the pixel unit, and to obtain an output signal seemingly from one pixel. The pixel unit includes an absorbing unit configured to absorb overflowing electric charge from a photoelectric conversion element with a high sensitivity.
摘要:
A solid-state image capture device includes: a pixel section in which pixels are arranged in a matrix; control lines; a pixel drive section that performs control, through the control lines, an operation of the pixels so as to perform a shutter operation of the pixel section and so as to perform reading; a reading circuit that reads signals from the pixels; and a shutter-mode switching section that controls an operation of the pixel drive section in accordance with a rolling shutter system in which exposure is performed for each row or a global shutter system in which exposure is simultaneously performed on all the pixels. The pixel drive section includes a shutter-mode corresponding section that causes an impedance value from the control lines to a power supply in a global shutter operation to be greater than an impedance value in a rolling shutter operation.
摘要:
A solid-state imaging device includes: a pixel unit in which plural pixels each having a photoelectric conversion element which converts light signals into electric signals and accumulates the electric signals according to exposure time are arranged in a matrix state; plural control lines for drive controlling the pixels; and a pixel drive unit controlling operation of the pixels to perform electronic shutter operation and reading of the pixel unit through the control lines,wherein the pixel drive unit includes a function of outputting read row selection signals and shutter row selection signals of row addresses of read rows from which signals are read and shutter rows from which charges accumulated in the photoelectric conversion elements are swept out and reset in accordance with address signals, and a function of selecting plural successive rows by designating the lowest address signal and the highest address signal.
摘要:
Disclosed is a solid-state imaging device including a photoelectric conversion portion photoelectrically converting incident light into signal charge and accumulate the signal charge, a plurality of signal lines including a transfer signal line to which a transfer signal for reading the signal charge accumulated in the photoelectric conversion portion to a floating diffusion region is input, a driver circuit inputting a plurality of desired signals into the plurality of signal lines including the transfer signal line, and a terminal circuit connected to a side opposite to a side of the transfer signal line where the driver circuit is connected and to which a control signal for securing the transfer signal line at a constant voltage is input before a desired signal of the plurality of desired signals with respect to a signal line adjacent to the transfer signal line of the plurality of signal lines is input to the signal line adjacent to the transfer signal line.
摘要:
An electrostatic capacitance detection device including an electrostatic capacitance detection element arranged in a matrix form; a row line arranged in each row for selecting a relevant electrostatic capacitance detection element arranged in a relevant row; an output line arranged in each column for outputting a signal from a relevant electrostatic capacitance detection element arranged in a relevant column, wherein each electrostatic capacitance detection element is provided with a row selection element that controls the outputting of the signal of the relevant electrostatic capacitance detection element to the relevant output line based on the signal from the relevant row, and the signal from the relevant electrostatic capacitance detection element, which is caused to be in a selection state based on the signal from the relevant row line, is outputted to the output line arranged in the relevant electrostatic capacitance detection element.
摘要:
There is provided an image pickup device which eliminates the need for image processing different from one frame to another, and is capable of eliminating centroid displacement without additionally performing a centroid correction process, thereby improving an S/N ratio and image quality. A controller 140 sequentially reads signals from all pixels when an operation mode control signal designates all-pixel readout mode, whereas, controls to read a signal from a different pixel while varying a readout position from one field to another when the operation mode control signal designates selective readout mode, and a signal processing section 150 performs signal processing on a set of field data of a single field to output resultant data as frame data when the operation mode control signal designates all-pixel readout mode, whereas, adds up plural sets of field data over a plurality of fields to output resultant data as frame data when the operation mode control signal designates selective readout mode.