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    METHOD OF FORMING A PHASE-CHANGEABLE LAYER AND METHOD OF MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE USING THE SAME
    15.
    发明申请
    METHOD OF FORMING A PHASE-CHANGEABLE LAYER AND METHOD OF MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE USING THE SAME 审中-公开
    形成相变层的方法及使用其制造半导体存储器件的方法

    公开(公告)号：US20080096386A1

    公开(公告)日：2008-04-24

    申请号：US11876631

    申请日：2007-10-22

    申请人： Young-Lim PARK ,  Sung-Lae CHO ,  Byoung-Jae BAE ,  Jin-Il LEE ,  Hye-Young PARK ,  Ji-Eun LIM

    发明人： Young-Lim PARK ,  Sung-Lae CHO ,  Byoung-Jae BAE ,  Jin-Il LEE ,  Hye-Young PARK ,  Ji-Eun LIM

    IPC分类号： H01L21/02

    CPC分类号： H01L27/2436 ,  C23C16/305 ,  C23C16/45525 ,  C23C16/45538 ,  C23C16/45553 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1675

    摘要： A phase-changeable layer and a method of forming the same are disclosed. In the method, a first hydrogen gas is introduced into a reaction chamber into which a substrate is loaded at a first flow rate to form first plasma. A primary cyclic CVD process is carried out using precursors in the reaction chamber to form a lower phase-changeable layer having a first grain size on the substrate. A second hydrogen gas is introduced into the reaction chamber at a second flow rate less than the first flow rate to form second plasma. A secondary cyclic CVD process is carried out using the precursors in the reaction chamber to form an upper phase-changeable layer having a second grain size smaller than the first grain size on the substrate, thereby forming a phase-changeable layer. Thus, the phase-changeable layer may have strong adhesion strength with respect to a lower layer and good electrical characteristics.

    摘要翻译： 公开了一种相变层及其形成方法。 在该方法中，将第一氢气引入反应室中，以第一流速将载体加载到反应室中以形成第一等离子体。 使用反应室中的前体进行初级循环CVD工艺，以在衬底上形成具有第一晶粒尺寸的下相变层。 将第二氢气以小于第一流量的第二流量引入反应室中以形成第二等离子体。 使用反应室中的前体进行二次循环CVD工艺，以形成具有比基板上的第一晶粒尺寸小的第二晶粒尺寸的上相变层，从而形成相变层。 因此，相变层可以具有相对于较低层的强粘合强度和良好的电特性。

    DATA OUTPUT BUFFER AND MEMORY DEVICE
    20.
    发明申请
    DATA OUTPUT BUFFER AND MEMORY DEVICE 有权
    数据输出缓冲器和存储器件

    公开(公告)号：US20120099383A1

    公开(公告)日：2012-04-26

    申请号：US13239478

    申请日：2011-09-22

    申请人： Si-Hong Kim ,  Seung-Jun Bae ,  Jin-Il Lee ,  Kwang-Il Park

    发明人： Si-Hong Kim ,  Seung-Jun Bae ,  Jin-Il Lee ,  Kwang-Il Park

    IPC分类号： G11C7/00 ,  G11C7/10

    CPC分类号： G11C7/1057 ,  G11C29/022 ,  G11C29/028 ,  G11C2207/2254

    摘要： A data output buffer includes a driving unit and a control unit. The driving unit selectively performs a termination operation that provides a termination impedance to a transmission line coupled to an external pin, and a driving operation that provides a drive impedance to the transmission line while outputting read data. The control unit adjusts a value of the termination impedance and a value of the drive impedance based on an output voltage at the external pin during a termination mode, and controls the driving unit to selectively perform one of the termination operation and the driving operation during a driving mode.

    摘要翻译： 数据输出缓冲器包括驱动单元和控制单元。 驱动单元选择性地执行向耦合到外部引脚的传输线提供终止阻抗的终止操作，以及在输出读取数据的同时向传输线提供驱动阻抗的驱动操作。 控制单元在终端模式期间根据外部引脚的输出电压来调整终端阻抗的值和驱动阻抗的值，并且控制驱动单元选择性地执行终止操作和驱动操作之一 驾驶模式。