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公开(公告)号:US20060046426A1
公开(公告)日:2006-03-02
申请号:US11200286
申请日:2005-08-09
Applicant: Gurtej Sandhu , Robert Patraw , M. Ceredig Roberts , Keith Cook
Inventor: Gurtej Sandhu , Robert Patraw , M. Ceredig Roberts , Keith Cook
IPC: H01L21/76
CPC classification number: H01L21/76229 , H01L27/1052
Abstract: The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated circuitry such as memory integrated circuitry.