公开(公告)号：US20090252939A1

公开(公告)日：2009-10-08

申请号：US12384617

申请日：2009-04-07

申请人： Sang-Joon Park ,  Kyoung-Kook kim ,  Yu-Sik Kim

发明人： Sang-Joon Park ,  Kyoung-Kook kim ,  Yu-Sik Kim

IPC分类号： B32B7/02 ,  B32B37/00 ,  B32B38/00 ,  B32B38/10 ,  B32B38/16

CPC分类号： H01L21/187 ,  B32B38/0008 ,  B32B2309/02 ,  B32B2309/027 ,  B32B2309/12 ,  B32B2310/14 ,  B32B2457/14 ,  Y10T156/1089 ,  Y10T428/24942

摘要： Wafer structures and wafer bonding methods are provided. In some embodiments, a wafer bonding method includes providing a conductive wafer and a plurality of insulating wafers, the conductive wafer being larger than the insulating wafers; performing a pre-treatment operation on the conductive wafer, the insulating wafers, or both; and directly bonding the insulating wafers to the conductive wafer.

摘要翻译： 提供了晶圆结构和晶圆接合方法。 在一些实施例中，晶片接合方法包括提供导电晶片和多个绝缘晶片，导电晶片大于绝缘晶片; 在导电晶片，绝缘晶片或两者上执行预处理操作; 并将绝缘晶片直接接合到导电晶片。

公开(公告)号：US20090146142A1

公开(公告)日：2009-06-11

申请号：US12076608

申请日：2008-03-20

申请人： Kyoung-kook Kim ,  Joo-sung Kim ,  Young-soo Park

发明人： Kyoung-kook Kim ,  Joo-sung Kim ,  Young-soo Park

IPC分类号： H01L33/00 ,  H01L21/205

CPC分类号： H01L33/08 ,  B82Y20/00 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/0262 ,  H01L33/34

摘要： Provided are a light-emitting device including a plurality of nanorods each of which comprises an active layer formed between an n-type region and a p-type region, and a method of manufacturing the same. The light-emitting device comprises: a substrate; a first electrode layer formed on the substrate; a basal layer formed on the first electrode layer; a plurality of nanorods formed vertically on the basal layer, each of which comprises a bottom part doped with first type, a top part doped with second type opposite to the first type, and an active layer between the bottom part and the top part, an insulating region formed between the nanorods, and a second electrode layer formed on the nanorods and the insulating region.

摘要翻译： 提供了包括多个纳米棒的发光器件及其制造方法，每个纳米棒包括形成在n型区域和p型区域之间的有源层。 发光装置包括：基板; 形成在所述基板上的第一电极层; 形成在所述第一电极层上的基底层; 在基底层上垂直形成的多个纳米棒，每个纳米棒包括掺杂有第一类型的底部部分，掺杂有与第一类型相反的第二类型的顶部部分，以及在底部部分和顶部部分之间的有源层， 形成在纳米棒之间的绝缘区域和形成在纳米棒和绝缘区域上的第二电极层。

公开(公告)号：US07485479B2

公开(公告)日：2009-02-03

申请号：US11649236

申请日：2007-01-04

申请人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

发明人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

IPC分类号： H01L21/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/405 ,  H01L2933/0016

摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I-V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.

摘要翻译： 提供一种氮化物系发光器件及其制造方法。 氮化物系发光器件具有在衬底上依次形成至少n包层，有源层和p包层的结构。 发光装置还包括由含有含锌（Zn）的氧化物构成的欧姆接触层，该氧化物含有形成在p包覆层上的p型掺杂剂。 制造氮化物系发光器件的方法包括在p包覆层上形成由含有p型掺杂剂的含Zn氧化物构成的欧姆接触层，形成欧姆接触层并退火所得到的结构。 基于氮化物的发光器件和制造方法通过改善与p型覆层的欧姆接触而提供优异的I-V特性，同时由于透明电极的高透光率而显着提高了器件的发光效率。

公开(公告)号：US20080113462A1

公开(公告)日：2008-05-15

申请号：US11882259

申请日：2007-07-31

申请人： Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

发明人： Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

IPC分类号： H01L21/02

CPC分类号： H01L33/0079 ,  H01L33/44

摘要： Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.

摘要翻译： 提供一种垂直发光装置的制造方法。 制造垂直发光器件的方法可以包括在衬底上形成包括n型半导体层，有源层和p型半导体层的发射层，形成将发光层划分成发光器件的第一沟槽 其中发射层保留在第一沟槽的下部上的单元到期望的或可选的预定厚度，在发射层上形成钝化层，在p型半导体层上形成p型电极 发射层，在钝化层和p型电极上形成金属支撑层，去除衬底，当发射层的表面通过去除衬底而暴露时去除发射层的剩余部分，形成n型 电极，并且切割金属支撑层以将发光层划分为发光器件单元。

公开(公告)号：US20080054296A1

公开(公告)日：2008-03-06

申请号：US11808368

申请日：2007-06-08

申请人： Suk-ho Yoon ,  Sung-ho Jin ,  Kyoung-kook Kim ,  Jeong-wook Lee

发明人： Suk-ho Yoon ,  Sung-ho Jin ,  Kyoung-kook Kim ,  Jeong-wook Lee

IPC分类号： H01L33/00 ,  H01L21/04

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/0079

摘要： Provided is a nitride-based semiconductor light emitting device having increased efficiency and power characteristics and method of manufacturing the same. The method may include forming a sacrificial layer on a substrate, forming a passivation layer on the sacrificial layer, forming a plurality of masking dots of a metal nitride on the passivation layer, laterally epitaxially growing a nitride-based semiconductor layer on the passivation layer using the masking dots as masks, forming a semiconductor device on the nitride-based semiconductor layer, and wet etching the sacrificial layer to separate and/or remove the substrate from the semiconductor device.

摘要翻译： 提供了一种具有提高的效率和功率特性的氮化物基半导体发光器件及其制造方法。 该方法可以包括在衬底上形成牺牲层，在牺牲层上形成钝化层，在钝化层上形成金属氮化物的多个掩蔽点，在钝化层上横向外延生长氮化物基半导体层，使用 掩模点作为掩模，在氮化物基半导体层上形成半导体器件，以及湿蚀刻牺牲层，以从半导体器件分离和/或去除衬底。

公开(公告)号：US20070111354A1

公开(公告)日：2007-05-17

申请号：US11649236

申请日：2007-01-04

申请人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

发明人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

IPC分类号： H01L21/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/405 ,  H01L2933/0016

摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I-V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.

公开(公告)号：US20050199888A1

公开(公告)日：2005-09-15

申请号：US11076249

申请日：2005-03-10

申请人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem ,  Jung-inn Sohn

发明人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem ,  Jung-inn Sohn

IPC分类号： H01L21/00 ,  H01L27/15 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H05B33/26

CPC分类号： H01L33/42 ,  H01L33/387 ,  H01L2933/0016

摘要： A top-emitting nitride-based light-emitting device and a method of manufacturing the same. The top-emitting nitride-based light-emitting device having a substrate, an n-cladding layer, an active layer, and a p-cladding layer sequentially formed includes: a grid cell layer formed on the p-cladding layer by a grid array of separated cells formed from a conducting material with a width of less than 30 micrometers to improve electrical and optical characteristics; a surface protective layer that is formed on the p-cladding layer and covers at least regions between the cells to protect a surface of the p-cladding layer; and a transparent conducting layer formed on the surface protective layer and the grid cell layer using a transparent conducting material. The light-emitting device and the method of manufacturing the same provide an improved ohmic contact to the p-cladding layer, excellent I-V characteristics, and high light transmittance, thus increasing luminous efficiency of the device.

摘要翻译： 顶部发光氮化物系发光器件及其制造方法。 具有依次形成的基板，n包层，有源层和p型包覆层的顶部发射氮化物系发光器件包括：栅格单元层，其通过栅格阵列形成在p包层上 由宽度小于30微米的导电材料形成的分离的电池，以改善电气和光学特性; 表面保护层，其形成在所述p包覆层上并且覆盖所述电池之间的至少区域以保护所述p型覆层的表面; 以及使用透明导电材料形成在表面保护层和栅极电池层上的透明导电层。 发光器件及其制造方法提供了对p型覆层的改善的欧姆接触，优异的I-V特性和高透光率，从而提高了器件的发光效率。

公开(公告)号：US06852623B2

公开(公告)日：2005-02-08

申请号：US10701483

申请日：2003-11-06

申请人： Seong-Ju Park ,  Kyoung-Kook Kim

发明人： Seong-Ju Park ,  Kyoung-Kook Kim

IPC分类号： C23C14/08 ,  H01L21/00 ,  H01L21/324 ,  H01L21/363 ,  H01L21/44 ,  H01L21/477

CPC分类号： H01L21/477

摘要： Disclosed herein is a method for manufacturing a zinc oxide semiconductor. The method comprises the steps of forming a zinc oxide thin film including a group V element as a dopant on a substrate by using a zinc oxide compound containing a group V element or an oxide thereof, charging the substrate having the zinc oxide thin film formed thereon into a chamber for thermal annealing, and thermal annealing the substrate in the chamber to activate the dopant, thereby changing the zinc oxide thin film exhibiting n-type electrical properties or insulator properties to a zinc oxide thin film exhibiting p-type electrical properties. According to the method, since a zinc oxide thin film exhibiting n-type electrical properties can be easily changed to a zinc oxide thin film exhibiting p-type electrical properties, the provision of holes required for optical devices is facilitated, thereby enabling the development of photoelectric devices such as light-emitting diodes, laser diodes and UV sensors and further extending applicability of the zinc oxide semiconductor.

摘要翻译： 本文公开了一种制造氧化锌半导体的方法。 该方法包括以下步骤：通过使用含有V族元素或其氧化物的氧化锌化合物在基板上形成包含V族元素作为掺杂剂的氧化锌薄膜，对其上形成有氧化锌薄膜的基板 进入用于热退火的室，以及对室中的基板进行热退火以激活掺杂剂，从而将具有n型电性能或绝缘体性质的氧化锌薄膜改变为具有p型电性能的氧化锌薄膜。 根据该方法，由于具有n型电性能的氧化锌薄膜可以容易地变为具有p型电性能的氧化锌薄膜，因此容易提供光学器件所需的孔，从而能够开发 光电器件如发光二极管，激光二极管和紫外线传感器，并进一步延长氧化锌半导体的适用性。

公开(公告)号：US07781246B2

公开(公告)日：2010-08-24

申请号：US11882259

申请日：2007-07-31

申请人： Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

发明人： Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/44

摘要： Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.

摘要翻译： 提供一种垂直发光装置的制造方法。 制造垂直发光器件的方法可以包括在衬底上形成包括n型半导体层，有源层和p型半导体层的发射层，形成将发光层划分成发光器件的第一沟槽 其中发射层保留在第一沟槽的下部上的单元到期望的或可选的预定厚度，在发射层上形成钝化层，在p型半导体层上形成p型电极 发射层，在钝化层和p型电极上形成金属支撑层，去除衬底，当发射层的表面通过去除衬底而暴露时去除发射层的剩余部分，形成n型 电极，并且切割金属支撑层以将发光层划分为发光器件单元。

公开(公告)号：US20100148825A1

公开(公告)日：2010-06-17

申请号：US12591701

申请日：2009-11-30

申请人： Jae-chul Park ,  I-hun Song ,  Young-soo Park ,  Kee-won Kwon ,  Chang-jung Kim ,  Kyoung-kook Kim ,  Sung-ho Park ,  Sung-hoon Lee ,  Sang-wook Kim ,  Sun-il Kim

发明人： Jae-chul Park ,  I-hun Song ,  Young-soo Park ,  Kee-won Kwon ,  Chang-jung Kim ,  Kyoung-kook Kim ,  Sung-ho Park ,  Sung-hoon Lee ,  Sang-wook Kim ,  Sun-il Kim

IPC分类号： H03K19/094 ,  H01L29/786 ,  H01L21/8234 ,  H01L21/336 ,  H01L27/088

CPC分类号： H01L29/7869 ,  H01L27/0207 ,  H01L27/11521 ,  H01L27/11807 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/41733 ,  H01L29/78648

摘要： Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device may be a complementary device including a p-type oxide TFT and an n-type oxide TFT. The semiconductor device may be a logic device such as an inverter, a NAND device, or a NOR device.

摘要翻译： 提供半导体器件和制造半导体器件的方法。 半导体器件可以是包括p型氧化物TFT和n型氧化物TFT的互补器件。 半导体器件可以是诸如逆变器，NAND器件或NOR器件的逻辑器件。