公开(公告)号：US5522052A

公开(公告)日：1996-05-28

申请号：US408174

申请日：1995-03-22

Applicant: Masao Inoue ,  Jiro Miyake

Inventor： Masao Inoue ,  Jiro Miyake

IPC: G06F9/302 ,  G06F9/38 ,  G06F9/30 ,  G06F9/22

CPC classification number: G06F9/3001 ,  G06F9/3824 ,  G06F9/3836 ,  G06F9/3867

Abstract: A pipeline processor comprises a memory stage arithmetic unit, a data dependence detecting unit and a control unit. The data dependence detecting unit outputs a detection signal to the control unit when it detects the data dependent relationship between a load instruction LD and a subtraction instruction SUB to be executed next thereto. The control unit receives the detection signal to control such that load data to be loaded from a memory unit according to the load instruction LD is inputted to the memory stage arithmetic unit. The memory stage arithmetic unit executes subtraction by using the load data in a memory stage of the subtraction instruction SUB.

Abstract translation: 流水线处理器包括存储器级算术单元，数据相关性检测单元和控制单元。 当数据相关检测单元检测到要在其上执行的加载指令LD和减法指令SUB之间的数据相关关系时，向控制单元输出检测信号。 控制单元接收检测信号以进行控制，使得根据加载指令LD从存储单元加载的负载数据被输入到存储器级算术单元。 存储器级算术单元通过使用减法指令SUB的存储级中的负载数据进行减法。

公开(公告)号：US5481585A

公开(公告)日：1996-01-02

申请号：US434171

申请日：1995-05-03

Applicant: Yutaro Kimura ,  Tetsuhiko Ikeshima ,  Hiromichi Tonami ,  Ikuo Konishi ,  Hiroshi Horikawa ,  Akihiro Daikoku ,  Shigekazu Sakabe ,  Masao Inoue ,  Akinori Yamasaki

Inventor： Yutaro Kimura ,  Tetsuhiko Ikeshima ,  Hiromichi Tonami ,  Ikuo Konishi ,  Hiroshi Horikawa ,  Akihiro Daikoku ,  Shigekazu Sakabe ,  Masao Inoue ,  Akinori Yamasaki

IPC: A61B6/03 ,  H01J35/18 ,  H01J35/24 ,  H05G1/26 ,  H05G1/66 ,  H01J35/04

CPC classification number: H05G1/26 ,  F16C32/0444 ,  H01J35/18 ,  H01J35/24 ,  H05G1/66 ,  H01J2235/066 ,  H01J2235/1204 ,  H01J2235/1262

Abstract: The rotary cathode X-ray tube equipment of the present invention is constructed so as to permit radiation of X-ray from all directions with respect to the whole circumference of a subject, and is used for x-ray CT. The equipment of the invention is constructed to prevent an X-ray radiation window 40 of a low strength from being influenced by atmospheric deformations of a vacuum vessel 1 or by machining and assembling errors, for example by using a joint portion disposed between the X-ray radiation window and an inner ring and having both a surface perpendicular to a rotational axis of a rotary member and a cylindrical surface parallel to the rotational axis, a face seal formed on the surface of the joint portion perpendicular to the rotational axis, and an axial seal formed on the cylindrical surface of the joint portion parallel to the rotational axis.

Abstract translation: 本发明的旋转阴极X射线管设备被构造为允许相对于被摄体的整个周边从各个方向发射X射线，并且用于X射线CT。 本发明的设备被构造成防止低强度的X射线辐射窗40受到真空容器1的大气变形的影响，或者通过加工和组装误差，例如通过使用设置在X射线 并且具有垂直于旋转构件的旋转轴线的表面和平行于旋转轴线的圆柱形表面的表面，形成在垂直于旋转轴线的接合部分的表面上的面密封件，以及 形成在与旋转轴线平行的关节部分的圆柱形表面上的轴向密封。

公开(公告)号：US5420426A

公开(公告)日：1995-05-30

申请号：US66146

申请日：1993-05-21

Applicant: Masao Inoue

Inventor： Masao Inoue

IPC: G01J5/34 ,  G01J5/02 ,  H01L31/0224

CPC classification number: G01J5/34

Abstract: A pyroelectric device is arranged such that a pyroelectric member sensitive to infrared rays is incorporated in a casing composed of a can and a stem made of materials with similar thermal expansion coefficients. A filter for sealing a window hole for introducing infrared rays into the inside of the pyroelectric device is fixed to the window hole by a fusing agent of silver solder. Electrodes are formed on the upper and lower surfaces of the pyroelectric member and are composed of an absorbing electrode portion for absorbing infrared rays and a drawing electrode portion for outputting an electric signal by sensing the infrared rays. The absorbing electrode portion is composed of an infrared ray absorbing material formed in a thin layer. The drawing electrode portion is composed of the same material formed in a layer thicker than that of the absorbing electrode portion. Terminal pins passing through the pyroelectric device for outputting the electric signal are provided with flat collars near the extreme ends of the terminal pins. A printed board for internally processing the electric signals is abutted against the flat collars so that it is stably supported on the terminal pins in parallel with the filter.

Abstract translation: PCT No.PCT / JP92 / 01211 Sec。 371日期：1993年5月21日 102（e）日期1993年5月21日PCT提交1992年9月24日PCT公布。 出版物WO93 / 06444 日本1993年1月4日。热电元件被布置成使得对由红外线敏感的热电元件结合在壳体和由热膨胀系数相似的材料制成的壳体中。 用于将用于将红外线引入到热电元件内部的窗孔的过滤器通过银焊料的融合剂固定到窗孔。 电极形成在热电元件的上表面和下表面上，并且由用于吸收红外线的吸收电极部分和用于通过感测红外线输出电信号的引出电极部分组成。 吸收电极部分由形成在薄层中的红外线吸收材料组成。 拉伸电极部分由形成在比吸收电极部分厚的层中形成的相同材料构成。 通过用于输出电信号的热释电装置的端子引脚在端子销的末端附近设置有平坦的环。 用于内部处理电信号的印刷电路板与平坦的凸缘相接触，使其与过滤器平行地稳定地支撑在端子销上。

公开(公告)号：US5225810A

公开(公告)日：1993-07-06

申请号：US748187

申请日：1991-08-20

Applicant: Masao Inoue ,  Yoshinori Igarashi

Inventor： Masao Inoue ,  Yoshinori Igarashi

IPC: G01S17/08 ,  G01S17/10 ,  G08B17/103 ,  G08B17/12

CPC classification number: G08B17/103 ,  G01S17/10

Abstract: A fire detection apparatus discriminates white smoke, black smoke and flame in a protected area based on changing characteristics of optically measured distances. The apparatus includes a distance meter having a light emitter for emitting a pulse of light energy towards a reference object, such as a distant wall, and a light detector for receiving the pulse of light energy reflected from the reference object or any intervening object. A distance to the reference object or the intervening object is determined based on the lapse of time from the emission to the detection of the pulse of light energy. White smoke is deemed detected when the distance measured is less than a reference difference and is substantially free of fluctuations. Black smoke is detected when the distance measured is more than the reference distance and is also substantially free of fluctuations. Flame is detected when the distances measured differ from the reference distance and fluctuates substantially.

公开(公告)号：US4548469A

公开(公告)日：1985-10-22

申请号：US618160

申请日：1984-06-07

Applicant: Masao Inoue ,  Shingo Suzuki ,  Syozo Saito

Inventor： Masao Inoue ,  Shingo Suzuki ,  Syozo Saito

IPC: G03B21/62 ,  G03B21/60

CPC classification number: G03B21/625

Abstract: A rear projection screen has a viewer's side and a projection side on which the image of a source is projected so that the projected image is visible from the viewer's side through the screen. The rear projection screen has a lenticular lens formed on the viewing side and including a multiplicity of vertically extending lens units each being provided at its both sides with total reflection surfaces. The lenticular lens further includes a multiplicity of horizontally extending lens units which diffuse the light in the vertical direction. The angular field of vision is increased in the horizontal direction by the vertical lens units and also in the vertical direction by the horizontally extending lens units.

Abstract translation: 背投屏幕具有​​观看者的侧面和投射侧，源投影图像，使得投影图像从观察者侧通过屏幕可见。 背投屏幕具有​​形成在观察侧的双凸透镜，并且包括多个垂直延伸的透镜单元，每个透镜单元的两侧均设置有全反射面。 双凸透镜还包括多个水平延伸的透镜单元，其在垂直方向上扩散光。 通过垂直透镜单元在水平方向上的角度视场和通过水平延伸的透镜单元在垂直方向上增加视场。

公开(公告)号：US4525029A

公开(公告)日：1985-06-25

申请号：US564301

申请日：1983-12-22

Applicant: Masao Inoue ,  Shingo Suzuki ,  Hajime Gotoh

Inventor： Masao Inoue ,  Shingo Suzuki ,  Hajime Gotoh

IPC: H04N5/72 ,  G03B21/62 ,  G03B21/625 ,  G03B21/60

CPC classification number: G03B21/625

Abstract: In the embodiments of the invention disclosed herein a rear projection screen has a projection surface and a viewing surface with one of the surfaces formed so as to serve as a lens to provide bright stripe portions where the light passes and dark stripe portions where no light passes. Grooves are formed in the viewing surface along the dark stripe portions and thread-like members are disposed in these grooves as light-absorbing means. The lens formed in the screen surface may be formed of lenticules grooves having total reflection surfaces provided on both sides thereof and a Fresnel lens may be provided on the projection side surface. The thread-like members may be self-adhesive and may be disposed under tension in a screen having a curved surface. A diffusion agent and/or a light-absorbing colorant may be mixed into a medium constituting the screen.

Abstract translation: 在本文公开的本发明的实施例中，背投屏幕具有​​突出表面和观察表面，其中一个表面形成为用作透镜，以提供光通过的亮条部分和没有光通过的暗条纹部分 。 在沿着暗条纹部分的观察表面上形成槽，并且在这些槽中设有线状构件作为光吸收装置。 形成在屏幕表面上的透镜可以由在其两侧设置有全反射面的微细凹槽形成，并且可以在突出侧表面上设置菲涅尔透镜。 螺纹状构件可以是自粘合的，并且可以在具有弯曲表面的筛网中在张力下设置。 扩散剂和/或吸光性着色剂可以混合到构成筛网的介质中。

公开(公告)号：US07741201B2

公开(公告)日：2010-06-22

申请号：US11371082

申请日：2006-03-09

Applicant: Jiro Yugami ,  Masao Inoue ,  Kenichi Mori ,  Shinsuke Sakashita

Inventor： Jiro Yugami ,  Masao Inoue ,  Kenichi Mori ,  Shinsuke Sakashita

IPC: H01L21/3205

CPC classification number: H01L29/495 ,  H01L21/28176 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66575

Abstract: The semiconductor device includes a semiconductor substrate, a gate insulating film formed in contact with an upper side of the semiconductor substrate, and a gate electrode formed on the upper side of the gate insulating film and made of metal nitride or metal nitride silicide. A buffer layer for preventing diffusion of nitrogen and silicon is interposed between the gate insulating film and the gate electrode. Preferably, the buffer layer has a thickness of 5 nm or less. In the case where gate electrode contains Ti elements, and the gate insulating film contains Hf elements, the buffer layer preferably contains a titanium film.

Abstract translation: 半导体器件包括半导体衬底，与半导体衬底的上侧接触形成的栅极绝缘膜，以及形成在栅极绝缘膜的上侧并由金属氮化物或金属氮化物硅化物制成的栅电极。 用于防止氮和硅扩散的缓冲层插入在栅极绝缘膜和栅电极之间。 优选地，缓冲层的厚度为5nm以下。 在栅极含有Ti元素，栅极绝缘膜含有Hf元素的情况下，缓冲层优选含有钛膜。

公开(公告)号：US20100089843A1

公开(公告)日：2010-04-15

申请号：US12635243

申请日：2009-12-10

Applicant: Masao INOUE ,  Akihiro IKE

Inventor： Masao INOUE ,  Akihiro IKE

IPC: B01D29/66 ,  B01D29/60

CPC classification number: A61M1/3643 ,  A61M1/3472 ,  A61M1/3482 ,  A61M1/3644 ,  A61M1/365

Abstract: To provide a double filtration blood purification apparatus that can be primed while generation of bubbles within each of a separating membrane in both of a blood component separator and a plasma component separator is avoided and also to provide a method of priming such blood purification apparatus. A cleansing liquid introducing passage 19 is provided, which is a passage dedicated to introduce a cleansing liquid P from a cleansing liquid supply source 57 into a plasma component separator 3 and, also, this cleansing liquid introducing passage 19 is provided with a dedicated, third pump 3. When the third and first pumps are driven in normal and reverse directions, respectively, by a controller 50, a sufficient pressure is applied to the cleansing liquid P by the third ump and the cleansing liquid P can be introduced into the plasma component separator 3.

Abstract translation: 提供一种双层过滤血液净化装置，其可以在血液成分分离器和血浆成分分离器两者的分离膜的每一个内产生气泡的同时被引发，并且还提供了引发这种血液净化装置的方法。 提供了一种清洁液引入通道19，其是专用于将清洁液体P从清洁液体供应源57引入等离子体成分分离器3的通道，并且该清洁液引入通道19还具有专用的第三 泵3.当通过控制器50分别在正反方向驱动第三泵和第一泵时，通过第三泵将足够的压力施加到清洁液P，并且清洁液P可以被引入到等离子体部件 分离器3。

公开(公告)号：US07569890B2

公开(公告)日：2009-08-04

申请号：US11409081

申请日：2006-04-24

Applicant: Shimpei Tsujikawa ,  Yasuhiko Akamatsu ,  Hiroshi Umeda ,  Jiro Yugami ,  Masaharu Mizutani ,  Masao Inoue ,  Junichi Tsuchimoto ,  Kouji Nomura

Inventor： Shimpei Tsujikawa ,  Yasuhiko Akamatsu ,  Hiroshi Umeda ,  Jiro Yugami ,  Masaharu Mizutani ,  Masao Inoue ,  Junichi Tsuchimoto ,  Kouji Nomura

IPC: H01L23/62

CPC classification number: H01L21/823857

Abstract: The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered.The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film.

Abstract translation: 在这种CMOS型半导体器件的制造方法中，能够抑制在栅极电极中含有硼的情况下，从pMOS晶体管的栅电极到半导体衬底的硼渗透，同时能够提高pMOS的NBTI寿命 提供了晶体管，而不降低nMOS晶体管的性能。 关于本发明的CMOS型半导体器件的制造方法具有以下工序。 卤素引入pMOS晶体管形成区域的半导体衬底。 接下来，在pMOS晶体管形成区域的半导体衬底上形成栅极绝缘膜。 接下来，将氮引入到栅极绝缘膜。

公开(公告)号：US20060273401A1

公开(公告)日：2006-12-07

申请号：US11409081

申请日：2006-04-24

Applicant: Shimpei Tsujikawa ,  Yasuhiko Akamatsu ,  Hiroshi Umeda ,  Jiro Yugami ,  Masaharu Mizutani ,  Masao Inoue ,  Junichi Tsuchimoto ,  Kouji Nomura

Inventor： Shimpei Tsujikawa ,  Yasuhiko Akamatsu ,  Hiroshi Umeda ,  Jiro Yugami ,  Masaharu Mizutani ,  Masao Inoue ,  Junichi Tsuchimoto ,  Kouji Nomura

IPC: H01L29/94

CPC classification number: H01L21/823857

Abstract: The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered. The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film.