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36 条记录 (耗时 0.023 秒)

    Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies
    11.
    发明申请
    Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies 审中-公开

    公开(公告)号：US20120040518A1

    公开(公告)日：2012-02-16

    申请号：US13284912

    申请日：2011-10-30

    申请人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    发明人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    IPC分类号： H01L21/20

    CPC分类号： C23C16/452 ,  C23C16/24 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

    摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

    Plasma deposition of amorphous semiconductors at microwave frequencies
    12.
    发明授权
    Plasma deposition of amorphous semiconductors at microwave frequencies 失效
    微波等离子体沉积非晶半导体

    公开(公告)号：US08048782B1

    公开(公告)日：2011-11-01

    申请号：US12855631

    申请日：2010-08-12

    申请人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    发明人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    IPC分类号： H01L21/00

    CPC分类号： C23C16/452 ,  C23C16/24 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

    摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

    摘要翻译： 微波等离子体沉积薄膜光伏材料的设备和方法。 该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的沉积。 该装置包括带有通过其的导管的微波施加器，其携带沉积物质。 施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。 导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。 沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。 本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

    Programmable resistance memory element and method for making same
    13.
    发明授权
    Programmable resistance memory element and method for making same 有权
    可编程电阻存储元件及其制造方法

    公开(公告)号：US07833823B2

    公开(公告)日：2010-11-16

    申请号：US12069046

    申请日：2008-02-07

    申请人： Patrick Klersy

    发明人： Patrick Klersy

    IPC分类号： H01L21/00

    CPC分类号： G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/124 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/1691

    摘要： A programmable resistance memory element. The active volume of memory material is made small by the presence of a small area of contact between the conductive material and the memory material. The area of contact is created by forming a region of conductive material and an intersecting sidewall layer of the memory material. The region of conductive material is preferably a sidewall layer of conductive material.

    摘要翻译： 可编程电阻存储元件。 通过在导电材料和存储材料之间存在小的接触面积，使存储材料的有效体积变小。 通过形成存储材料的导电材料的区域和相交的侧壁层来产生接触区域。 导电材料的区域优选为导电材料的侧壁层。

    Programmable Resistance Memory Element and Method for Making Same
    18.
    发明申请
    Programmable Resistance Memory Element and Method for Making Same 有权
    可编程电阻存储元件及其制作方法

    公开(公告)号：US20110114911A1

    公开(公告)日：2011-05-19

    申请号：US12944312

    申请日：2010-11-11

    申请人： Patrick Klersy

    发明人： Patrick Klersy

    IPC分类号： H01L45/00

    CPC分类号： G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/124 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/1691

    摘要： A programmable resistance memory element. The active volume of memory material is made small by the presence of a small area of contact between the conductive material and the memory material. The area of contact is created by forming a region of conductive material and an intersecting sidewall layer of the memory material. The region of conductive material is preferably a sidewall layer of conductive material.

    摘要翻译： 可编程电阻存储元件。 通过在导电材料和存储材料之间存在小的接触面积，使存储材料的有效体积变小。 通过形成存储材料的导电材料的区域和相交的侧壁层来产生接触区域。 导电材料的区域优选为导电材料的侧壁层。