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公开(公告)号:US12080631B2
公开(公告)日:2024-09-03
申请号:US17463140
申请日:2021-08-31
发明人: Luca Grandi
IPC分类号: H01L23/485 , H01L21/56 , H01L23/31
CPC分类号: H01L23/485 , H01L21/561 , H01L23/3107
摘要: The present disclosure is directed to a semiconductor package including a first laser direct structuring (LDS) resin layer and a second LDS resin layer on the first LDS resin layer. Respective surfaces of the first LDS resin layer and the second LDS resin layer are patterned utilizing an LDS process by exposing the respective surfaces to a laser. Patterning the first and second LDS resin layers, respectively, activates additive material present within the first and second LDS resin layers, respectively, converting the additive material from a non-conductive state to a conductive state. The LDS process is followed by a chemical plating step and an electrolytic plating process to form conductive structure coupled to a plurality of die within the first and second LDS resin layers. A molding compound layer is formed on surfaces of the conductive structures and covers the surfaces of the conductive structures. After these steps have been completed, the first LDS resin layer and the second LDS resin layer are singulated along channels filled with conductive material.
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12.
公开(公告)号:US20240291387A1
公开(公告)日:2024-08-29
申请号:US18437919
申请日:2024-02-09
CPC分类号: H02M3/33523 , H02M1/0054 , H02M3/01 , H02M3/3384
摘要: Provided is a DC-DC converter with galvanic isolation comprising a resonant oscillator coupled to a primary winding of a galvanic isolation transformer. A rectifier is coupled to a secondary winding of the transformer to provide an output voltage. The DC-DC converter comprises a regulation loop configured to regulate an output voltage with respect to a reference voltage by controlling a current flowing in the resonant oscillator as a function of a result of a signal indicative of the comparison between the output voltage and the reference voltage. The resonant oscillator is configured to operate at a frequency, in particular tuned at sub-resonant point, in particular sub-harmonic frequency, below a resonance frequency of the resonant oscillator which maximizes a quality factor of the resonant oscillator, in particular below a resonance frequency of a LC tank circuit comprised in the resonant oscillator which maximizes a quality factor of the LC tank circuit.
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公开(公告)号:US12075236B2
公开(公告)日:2024-08-27
申请号:US17655867
申请日:2022-03-22
发明人: Francesco Caserta , Amedeo Veneroso
IPC分类号: H04W12/03 , H04W8/18 , H04W12/041 , H04W12/0431
CPC分类号: H04W12/03 , H04W8/18 , H04W12/041 , H04W12/0431
摘要: A method for concealing a subscription identifier at a user equipment including a mobile equipment and an integrated circuit card storing the subscription identifier, the method including receiving a corresponding request by a server to provide a corresponding subscription identifier, performing an elliptical curve encryption of the subscription identifier generating a concealed subscription identifier, the concealing operation including the mobile equipment sending an identity retrieve command to the card, performing, before receiving the identity retrieve command at the card, a pre-calculation of the ephemeral key pair including an ephemeral private key and ephemeral public key and the shared secret key, and in response to the respective state of completion indicating that completion of the computation of a valid ephemeral key pair or shared secret key, storing the corresponding values of the ephemeral key pair and shared secret key in a table in a memory of the card.
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公开(公告)号:US12073860B2
公开(公告)日:2024-08-27
申请号:US18191639
申请日:2023-03-28
发明人: Dario Livornesi , Alessio Emanuele Vergani , Paolo Pulici , Francesco Piscitelli , Enrico Mammei , Mojtaba Mohammadi Abdevand , Piero Malcovati , Edoardo Bonizzoni
CPC分类号: G11B5/6029 , G11B5/607 , H03F1/0261
摘要: According to an embodiment, a circuit includes a biasing and a low-frequency recovery circuit. The biasing circuit includes a voltage digital to analog converter (V-DAC), a differential difference amplifier coupled to the V-DAC, a common-mode feedback (CMFB) amplifier coupled to the differential difference amplifier, and a first pair of transistors arranged as a high-impedance structure and coupled to the differential difference amplifier and the CMFB amplifier. The low-frequency recovery circuit includes a current digital to analog converter (C-DAC), a second pair of transistors arranged as a high-impedance structure and coupled to the first pair of transistors, a pair of resistors having a resistance value equal to half a resistance of the resistive sensor, the pair of resistors arranged between the second pair of transistors and coupled to the C-DAC, and a gain circuit coupled to shared nodes between the second pair of transistors and the pair of resistors.
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15.
公开(公告)号:US12072372B2
公开(公告)日:2024-08-27
申请号:US17903344
申请日:2022-09-06
IPC分类号: G01R31/28
CPC分类号: G01R31/2834
摘要: A system, method, and device to test an electronic circuit are disclosed having a stage to supply a driving signal to a load comprising a pull-up switch and a pull-down switch and a pre-driver stage including pre-driver circuits. The electronic circuit including circuits for testing the pre-driver stage under the control of an automatic testing equipment (ATE) to operate a built-in self-test sequence including test commands for the pre-driver stage under the control of an external test signal issued by the ATE. The system includes a time measuring circuit to measure duration of signals at the output of the stage coupled to a pass-fail check circuit, and to evaluate if the duration of signals at the output of the stage to determine whether the output satisfies a pass criterion.
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公开(公告)号:US20240271935A1
公开(公告)日:2024-08-15
申请号:US18160723
申请日:2023-01-27
发明人: Alessandro MAGNANI , Matteo QUARTIROLI , Alessandra Maria RIZZO PIAZZA RONCORONI , Paolo ROSINGANA
IPC分类号: G01C19/5776
CPC分类号: G01C19/5776 , G06F7/544 , H04R1/10 , H04R2460/13
摘要: A device includes one or more inertial sensors and fusion circuitry coupled to the one or more inertial sensors. The inertial sensors, in operation, generate inertial sensor data with respect to a plurality of axes of movement. The fusion circuitry, in a polar fusion mode of operation, applies a plurality of polar rotation operations to the generated inertial sensor data to rotate the generated inertial sensor data onto an axis of the plurality of axes of movement. A fused data signal is generated based on a result of the plurality of polar rotation operations. The plurality of inertial sensors may include bone-conduction sensors.
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公开(公告)号:US20240266459A1
公开(公告)日:2024-08-08
申请号:US18608301
申请日:2024-03-18
IPC分类号: H01L31/107 , H01L27/144 , H01L31/0352 , H01L31/18
CPC分类号: H01L31/1075 , H01L27/1443 , H01L31/0352 , H01L31/18
摘要: In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.
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18.
公开(公告)号:US20240266259A1
公开(公告)日:2024-08-08
申请号:US18637906
申请日:2024-04-17
发明人: Mauro MAZZOLA , Matteo DE SANTA
IPC分类号: H01L23/495 , H01L21/50 , H01L23/00
CPC分类号: H01L23/4951 , H01L21/50 , H01L23/49541 , H01L23/49575 , H01L24/74
摘要: In providing electrical wire-like connections between at least one semiconductor die arranged on a semiconductor die mounting area of a substrate and an array of electrically-conductive leads in the substrate, pressure force is applied to the electrically-conductive leads in the substrate during bonding the wire-like connections to the electrically-conductive leads. Such a pressure force is applied to the electrically-conductive leads in the substrate via a pair of mutually co-operating force transmitting surfaces. These surfaces include a first convex surface engaging a second concave surface.
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公开(公告)号:US12057474B2
公开(公告)日:2024-08-06
申请号:US17325932
申请日:2021-05-20
CPC分类号: H01L29/0634 , H01L29/66712 , H01L29/7811 , H03F3/2176 , H03F2200/451
摘要: A semiconductor MOS device having an epitaxial layer with a first conductivity type formed by a drain region and by a drift region. The drift region accommodates a plurality of first columns with a second conductivity type and a plurality of second columns with the first conductivity type, the first and second columns alternating with each other and extending on the drain region. Insulated gate regions are each arranged on top of a respective second column; body regions having the second conductivity type extend above and at a distance from a respective first column, thus improving the output capacitance Cds of the device, for use in high efficiency RF applications.
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公开(公告)号:US12057180B2
公开(公告)日:2024-08-06
申请号:US17934102
申请日:2022-09-21
CPC分类号: G11C16/3445 , G11C16/14 , G11C16/26 , G11C16/3459 , G11C16/349 , H10B41/30 , H10B41/40
摘要: In an embodiment a non-volatile memory device includes a memory array having a plurality of memory cells, a control unit operatively coupled to the memory array, a biasing stage controllable by the control unit and configured to apply a biasing configuration to the memory cells to perform a memory operation and a reading stage coupled to the memory array and controllable by the control unit, the reading stage configured to verify whether the memory operation has been successful based on a verify level, wherein the control unit is configured to adaptively modify a value of the verify level based on an ageing of the memory cells.
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