Abstract:
A lamp and methods of forming are shown. In one example, a dielectric layer is formed over a gap between conductors in a plasma lamp. Electric arcing is reduced or eliminated, thus allowing tighter gaps and/or higher voltages. In one example a glass frit method is used to apply the dielectric layer. A lamp is shown with a barrier layer that prevents tarnish such as tarnish from sulfur exposure. The barrier layer reduces or prevents degradation of the lamp due to conversion of a conductor material to non-conductive tarnish material.
Abstract:
An electrodeless plasma lamp and a method of generating light are provided. The plasma lamp may comprise a power source to provide radio frequency (RF) power, and a bulb containing a fill that forms a plasma when the RF power is coupled to the fill. The plasma lamp further comprises a resonant structure having a quarter wave resonant mode. The resonant structure includes a lamp body comprising a dielectric material having a relative permittivity greater than 2, an inner conductor, and an outer conductor. The power source is configured to provide the RF power to the lamp body at about a resonant frequency for the resonant structure.
Abstract:
A plasma lamp is described with resonant frequency tuning capability and associated methods for tuning. One tuning method allows plasma lamp manufacturer to set the frequency of lamps to several discrete predetermined values. For example, most lamps that are near the center of a frequency distribution can be tuned to a nominal value such as 918.7 MHz. Other frequencies can also be tuned to increase manufacturing yield and improve lamp performance.