公开(公告)号：US07545008B2

公开(公告)日：2009-06-09

申请号：US11347164

申请日：2006-02-03

申请人： Philip Ching Ho Chan ,  Man Sun Chan ,  Xusheng Wu ,  Shengdong Zhang

发明人： Philip Ching Ho Chan ,  Man Sun Chan ,  Xusheng Wu ,  Shengdong Zhang

IPC分类号： H01L27/088

CPC分类号： H01L29/785 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/66795 ,  H01L29/775

摘要： A semiconductor device may include a substrate and an insulating layer formed on the substrate. A multi-layer fin may be formed on the insulating layer and may include two semiconducting layers isolated by an insulating layer in vertical direction. A first MOS type device comprising a first source region, a first channel region and a first drain region is arranged on the first semiconducting layer in the multi-layer fin. A second MOS type device comprising a second source region, a second channel region and a second drain region is arranged on the second semiconducting layer in the multi-layer fin. A gate electrode is provided so as to be vertically adjacent to the first and second channel regions.

摘要翻译： 半导体器件可以包括衬底和形成在衬底上的绝缘层。 可以在绝缘层上形成多层鳍，并且可以包括在垂直方向上被绝缘层隔离的两个半导体层。 包括第一源极区域，第一沟道区域和第一漏极区域的第一MOS型器件被布置在多层鳍片的第一半导体层上。 包括第二源极区，第二沟道区和第二漏极区的第二MOS型器件布置在多层鳍中的第二半导体层上。 栅电极设置成与第一和第二沟道区垂直相邻。