公开(公告)号：US20060083180A1

公开(公告)日：2006-04-20

申请号：US11233063

申请日：2005-09-23

Applicant: Shunsuke Baba ,  Kazuya Suzuki ,  Takashi Tanaka

Inventor： Shunsuke Baba ,  Kazuya Suzuki ,  Takashi Tanaka

IPC: G06F15/173 ,  H04J1/16

CPC classification number: H04L43/12 ,  H04L43/18

Abstract: A packet analysis system captures packets propagating through a network, and analyzes the captured packets. The packet analysis has a plurality of terminal node type sensors and a server. Each of the terminal node type sensors captures packets propagating through the network, and classifies the captured packets. A server acquires classification information from at least one of the terminal node type sensors through the network, and generates a whole report of the packet analysis system based the acquired classification information.

Abstract translation: 分组分析系统捕获通过网络传播的分组，并分析捕获的分组。 分组分析具有多个终端节点类型传感器和服务器。 每个终端节点类型传感器捕获通过网络传播的分组，并对捕获的分组进行分类。 服务器通过网络从至少一个终端节点类型传感器获取分类信息，并且基于获取的分类信息生成分组分析系统的整体报告。

公开(公告)号：US06753579B2

公开(公告)日：2004-06-22

申请号：US10425956

申请日：2003-04-30

Applicant: Shunsuke Baba

Inventor： Shunsuke Baba

IPC: H01L2978

CPC classification number: H01L29/78648 ,  H01L29/78615 ,  H01L29/78645

Abstract: In order to apply a predetermined voltage to a silicon layer (3) to control a threshold voltage, a second gate electrode (5) is provided on the surface of the silicon layer (3) with a gate oxide film (insulating layer) (4) interposed therebetween so as to fall within the same surface of the silicon layer (3) as a surface on which a source (7) and a drain (8) placed in the silicon layer (3) and a first gate electrode (6) are disposed.

Abstract translation: 为了对硅层（3）施加预定的电压以控制阈值电压，在硅层（3）的表面上设置第二栅极（5），栅极氧化膜（绝缘层）（4） ），以便落在硅层（3）的与沉积在硅层（3）中的源极（7）和漏极（8）的表面和第一栅电极（6）相同的表面内， 被处置。

公开(公告)号：US5977592A

公开(公告)日：1999-11-02

申请号：US925091

申请日：1997-09-08

Applicant: Shunsuke Baba

Inventor： Shunsuke Baba

IPC: H01L29/41 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/10 ,  H01L29/417 ,  H01L29/78 ,  H01L29/00

CPC classification number: H01L29/41766 ,  H01L27/0928 ,  H01L29/1087 ,  H01L29/78

Abstract: A semiconductor device includes a source and a drain formed in a device region of a semiconductor substrate, and an electrode withdrawal portion having an impurity concentration higher than that of the device region. The electrode withdrawal portion is formed so as to adjoin either one of the source and drain. An electrode for the source or drain adjacent to the electrode withdrawal portion is used jointly as an electrode for the electrode withdrawal portion.

Abstract translation: 半导体器件包括形成在半导体衬底的器件区域中的源极和漏极以及杂质浓度高于器件区域的电极引出部分。 电极取出部形成为与源极和漏极中的任一个相邻。 用于与电极取出部相邻的源极或漏极的电极共同地用作电极取出部的电极。