公开(公告)号：US6140243A

公开(公告)日：2000-10-31

申请号：US988570

申请日：1997-12-11

Applicant: Robert M. Wallace ,  Peijun Chen ,  S. Charles Baber ,  Steven A. Henck

Inventor： Robert M. Wallace ,  Peijun Chen ,  S. Charles Baber ,  Steven A. Henck

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/027 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/311

CPC classification number: H01L21/02068 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/32136

Abstract: An integrated circuit fabrication process in which residual fluorine contamination on metal surfaces after ashing is removed by exposure to an NH.sub.3 /O.sub.2 plasma.

Abstract translation: 集成电路制造工艺，其中通过暴露于NH 3 / O 2等离子体去除灰化后金属表面上的残留氟污染。

公开(公告)号：US20100129885A1

公开(公告)日：2010-05-27

申请号：US12589715

申请日：2009-10-26

Applicant: Nikolai Khramtsov ,  Alexander Amerik ,  Bruce E. Taillon ,  Steven A. Henck

Inventor： Nikolai Khramtsov ,  Alexander Amerik ,  Bruce E. Taillon ,  Steven A. Henck

IPC: C12P7/16 ,  C12N1/00 ,  C12N1/15 ,  C12N1/19 ,  C12N1/21

CPC classification number: C12P7/16 ,  Y02E50/10

Abstract: Embodiments of the present invention include methods for the production of four carbon alcohols, specifically n-butanol, by a consolidated bioprocessing approach for the conversion of cellulosic material to the desired end product. According to some embodiments, recombinant microbial host cells are provided, preferably S. cerevisiae, that are capable of converting cellulosic material to butanol and include butanol biosynthetic pathway genes and cellulase genes. According to some embodiments, recombinant microbial host cells are provided, preferably S. cerevisiae, that are capable of converting hemicellulosic material to butanol and include cellulase genes, butanol biosynthetic pathway genes and at least one gene for the conversion of a pentose sugar.

Abstract translation: 本发明的实施方案包括通过用于将纤维素材料转化为所需最终产物的固体生物处理方法来生产四种碳醇，特别是正丁醇的方法。 根据一些实施方案，提供重组微生物宿主细胞，优选酿酒酵母，其能够将纤维素材料转化为丁醇，并且包括丁醇生物合成途径基因和纤维素酶基因。 根据一些实施方案，提供重组微生物宿主细胞，优选酿酒酵母，其能够将半纤维素材料转化为丁醇，并且包括纤维素酶基因，丁醇生物合成途径基因和用于转化戊糖的至少一个基因。

公开(公告)号：US5620556A

公开(公告)日：1997-04-15

申请号：US385411

申请日：1995-02-08

Applicant: Steven A. Henck

Inventor： Steven A. Henck

IPC: G01B11/06 ,  G01N21/00

CPC classification number: G01B11/065

Abstract: Apparatus and methods for precise processing of thin materials in a process chamber by the use of ellipsometer monitoring is disclosed. The process includes rapidly etching a layer 42 of material covering a semiconductor device. The process includes placing the semiconductor wafer 14 into a processing chamber 10. In a typical operation, the wafer 14 will include a selected substrate 32 having a first thin layer 30 of material covering the substrate 32 and then a second layer 42 of a different material covering the first layer 30. A process such as reactive ion anisotropic etching which rapidly etches the second layer 42 is initiated and this etching is monitored in situ by an ellipsometer in combination with a controller 28 to determine the thickness of the second layer 42' which has been achieved. Once the desired amount of second layer 42 remains, the rapid etching process stops to leave a residual layer 42' such as about 250 .ANG. or in a preferred embodiment a thickness equivalent to about one molecular layer. A second chemical isotropic etching process step then starts which may be substantially ineffective at etching the first layer 30 of material and which etching process consequently is typically substantially slower than the first etching process. Since only a very thin layer remains, the slow speed or isotropic nature of the second etching process does not take an unacceptable amount of time or cause other problems, such as loss of critical dimension.

Abstract translation: 公开了通过使用椭偏仪监测在处理室中精细处理薄材料的装置和方法。 该方法包括快速蚀刻覆盖半导体器件的材料层42。 该方法包括将半导体晶片14放置在处理室10中。在典型的操作中，晶片14将包括选定的衬底32，其具有覆盖衬底32的材料的第一薄层30，然后是不同材料的第二层42 覆盖第一层30.开始快速蚀刻第二层42的诸如反应性离子各向异性蚀刻的过程，并且通过与控制器28组合的椭圆计现场监测该蚀刻，以确定第二层42'的厚度， 已经实现。 一旦所需量的第二层42保留，则快速蚀刻工艺停止以留下残余层42'，例如约250，或在优选实施方案中为等于约一个分子层的厚度。 然后开始第二种化学各向同性蚀刻工艺步骤，其在蚀刻第一材料层30时基本上无效，因此蚀刻工艺通常比第一蚀刻工艺慢得多。 由于仅剩下非常薄的层，所以第二蚀刻工艺的慢速或各向同性的性质不会变得不可接受的时间量或引起诸如临界尺寸损失的其它问题。

公开(公告)号：US5604625A

公开(公告)日：1997-02-18

申请号：US473596

申请日：1995-06-07

Applicant: Steven A. Henck

Inventor： Steven A. Henck

IPC: G02B26/08

CPC classification number: G02B26/0841 ,  Y10S359/90

Abstract: A method of preventing adhesion of contacting surfaces of micro-mechanical devices (10). Two materials are selected that are incompatible in the sense that they have at least low solid solubility and preferably, an inability to alloy. One of these materials is used as the first contacting surface (11), and the other as the second contacting surface (17).

Abstract translation: 一种防止微机械装置（10）的接触表面粘附的方法。 选择两种材料是不相容的，因为它们具有至少低的固溶度并且优选不能合金。 这些材料中的一种用作第一接触表面（11），另一种用作第二接触表面（17）。

公开(公告)号：US5576878A

公开(公告)日：1996-11-19

申请号：US220429

申请日：1994-03-30

Applicant: Steven A. Henck

Inventor： Steven A. Henck

IPC: G02B26/08

CPC classification number: G02B26/0841 ,  Y10S359/90

Abstract: A method of preventing adhesion of contacting surfaces of micro-mechanical devices (10). Two materials are selected that are incompatible in the sense that they have at least low solid solubility and preferably, an inability to alloy. One of these materials is used as the first contacting surface (11), and the other as the second contacting surface (17).

Abstract translation: 一种防止微机械装置（10）的接触表面粘附的方法。 选择两种材料是不相容的，因为它们具有至少低的固溶度并且优选不能合金。 这些材料中的一种用作第一接触表面（11），另一种用作第二接触表面（17）。