公开(公告)号：US4905198A

公开(公告)日：1990-02-27

申请号：US240603

申请日：1988-09-06

申请人： Kanji Oishi ,  Takashi Shinoda

发明人： Kanji Oishi ,  Takashi Shinoda

IPC分类号： G11C11/403 ,  G11C11/34 ,  G11C11/406

CPC分类号： G11C11/34 ,  G11C11/406

摘要： A semiconductor integrated circuit device which constitutes a dynamic RAM has an automatic refresh circuit that contains a refresh timer circuit. The refresh timer circuit has a program element such as a fuse element. The program element is programmed depending upon the data holding characteristics of the dynamic memory cells. Therefore, the refresh period is changed depending upon the characteristics of the dynamic memory cells. According to this construction, the refresh period changes and, as a result, any undesired refresh operation is prevented from being executed, making it possible to reduce the amount of electric power consumed by the circuit device.

摘要翻译： 构成动态RAM的半导体集成电路装置具有包含刷新定时器电路的自动刷新电路。 刷新定时器电路具有诸如保险丝元件的程序元件。 根据动态存储单元的数据保持特性来编程程序单元。 因此，根据动态存储单元的特性来改变刷新周期。 根据该结构，刷新周期变化，结果，防止执行任何不需要的刷新操作，从而可以减少电路装置消耗的电力量。

公开(公告)号：US4604749A

公开(公告)日：1986-08-05

申请号：US502636

申请日：1983-06-09

申请人： Takashi Shinoda ,  Kikuo Sakai ,  Masahiro Ogata ,  Hiroshi Kawamoto ,  Yoshiaki Onishi, deceased ,  Junko Onishi, administratrix

发明人： Takashi Shinoda ,  Kikuo Sakai ,  Masahiro Ogata ,  Hiroshi Kawamoto ,  Yoshiaki Onishi, deceased ,  Junko Onishi, administratrix

IPC分类号： G06F11/10 ,  G11C17/08

CPC分类号： G06F11/1008 ,  G06F11/1076 ,  G11C17/08

摘要： YA semiconductor memory is provided with memory cells for storing a plurality of sets of data, each of the sets having check bits. A selecting circuit selects some of the memory cells to form a set in response to a first address signal. The circuit includes an error correcting code circuit, a tristate circuit and a control circuit which forms a control signal to control the tristate circuit. Output terminals of the tristate circuit are coupled with external output terminals of the semiconductor memory. Also, the tristate circuit is controlled by the control signal to bring the external circuit terminals into high impedance at least during the time when the error correcting code circuit is delivering indefinite data.

摘要翻译： YA半导体存储器设置有用于存储多组数据的存储单元，每组具有校验位。 选择电路响应于第一地址信号选择一些存储器单元以形成集合。 电路包括纠错码电路，三态电路和形成控制信号以控制三态电路的控制电路。 三态电路的输出端子与半导体存储器的外部输出端子耦合。 此外，三态电路由控制信号控制，至少在纠错码电路传送不定数据的时间内使外部电路端子变为高阻抗。

公开(公告)号：US08845915B2

公开(公告)日：2014-09-30

申请号：US13201518

申请日：2010-01-22

申请人： Hiroshi Ono ,  Takashi Shinoda ,  Yuuhei Okada

发明人： Hiroshi Ono ,  Takashi Shinoda ,  Yuuhei Okada

IPC分类号： C03C15/00 ,  H01L21/321 ,  C09G1/02 ,  H01L21/768 ,  C09K3/14

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/7684 ,  H01L21/76898

摘要： A polishing agent which comprises a composition containing an inorganic acid, an amino acid, a protective film-forming agent, an abrasive, an oxidizing agent, an organic acid and water, adjusted to a pH of 1.5-4, wherein the amount of potassium hydroxide required to raise the pH of the composition without the organic acid to 4 is at least 0.10 mol with respect to 1 kg of the composition without the organic acid, and the organic acid contains at least two carboxyl groups, wherein the logarithm of the inverse of the first acid dissociation constant (pKa1) is no greater than 3.

摘要翻译： 一种抛光剂，其包含调节至pH为1.5-4的无机酸，氨基酸，保护膜形成剂，研磨剂，氧化剂，有机酸和水的组合物，其中钾的量 相对于1kg不含有机酸的组合物，无机有机物将组合物的pH升高至4所需的氢氧化物为至少0.10mol，有机酸含有至少两个羧基，其中反相的对数 的第一个酸解离常数（pKa1）不大于3。

公开(公告)号：US20130260558A1

公开(公告)日：2013-10-03

申请号：US13884883

申请日：2011-12-22

申请人： Munehiro Oota ,  Takaaki Tanaka ,  Toshio Takizawa ,  Shigeru Yoshikawa ,  Takaaki Matsumoto ,  Takahiro Yoshikawa ,  Takashi Shinoda

发明人： Munehiro Oota ,  Takaaki Tanaka ,  Toshio Takizawa ,  Shigeru Yoshikawa ,  Takaaki Matsumoto ,  Takahiro Yoshikawa ,  Takashi Shinoda

IPC分类号： H01L21/306

CPC分类号： H01L21/31055 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053

摘要： Provided is a polishing liquid including cerium oxide particles, an organic acid A, a polymer compound B having a carboxyl acid group or a carboxylate group, and water, wherein the organic acid A has at least one group selected from the group consisting of —COOM group, -Ph-OM group, —SO3M group and —PO3M2 group, pKa of the organic acid A is less than 9, a content of the organic acid A is 0.001 to 1 mass % with respect to the total mass of the polishing liquid, and a content of the polymer compound B is 0.01 to 0.50 mass % with respect to the total mass of the polishing liquid, and pH is in the range of 4.0 to 7.0.

摘要翻译： 本发明提供一种包括氧化铈颗粒，有机酸A，具有羧酸基或羧酸酯基的高分子化合物B和水的抛光液，其中有机酸A具有至少一个选自-COOM 基团-Ph-OM基团，-SO 3 M基团和-PO 3 M 2基团，有机酸A的pKa小于9，有机酸A的含量相对于研磨液的总质量为0.001〜1质量％ ，相对于研磨液的总质量，高分子化合物B的含量为0.01〜0.50质量％，pH为4.0〜7.0。

公开(公告)号：US20120299158A1

公开(公告)日：2012-11-29

申请号：US13265926

申请日：2010-12-10

申请人： Takashi Shinoda ,  Kazuhiro Enomoto ,  Toshiaki Akutsu

发明人： Takashi Shinoda ,  Kazuhiro Enomoto ,  Toshiaki Akutsu

IPC分类号： C09K13/00 ,  H01L29/02 ,  H01L21/304 ,  C09K13/06 ,  H01L21/306

CPC分类号： C09K3/1472 ,  C09G1/02 ,  H01L21/31053

摘要： The CMP polishing liquid of the invention is used by mixing a first solution and a second solution, the first solution comprises cerium-based abrasive grains, a dispersant and water, the second solution comprises a polyacrylic acid compound, a surfactant, a pH regulator, a phosphoric acid compound and water, the pH of the second solution is 6.5 or higher, and the first solution and second solution are mixed so that the phosphoric acid compound content is within a prescribed range. The CMP polishing liquid of the invention comprises cerium-based abrasive grains, a dispersant, a polyacrylic acid compound, a surfactant, a pH regulator, a phosphoric acid compound and water, with the phosphoric acid compound content being within a prescribed range.

摘要翻译： 本发明的CMP抛光液通过混合第一溶液和第二溶液来使用，第一溶液包括铈基磨料颗粒，分散剂和水，第二溶液包含聚丙烯酸化合物，表面活性剂，pH调节剂， 磷酸化合物和水，第二溶液的pH为6.5以上，第一溶液和第二溶液混合，使得磷酸化合物含量在规定范围内。 本发明的CMP抛光液含有磷酸化合物含量在规定范围内的铈系磨粒，分散剂，聚丙烯酸化合物，表面活性剂，pH调节剂，磷酸化合物和水。

公开(公告)号：US20100120250A1

公开(公告)日：2010-05-13

申请号：US12527607

申请日：2008-02-22

申请人： Jin Amanokura ,  Takafumi Sakurada ,  Sou Anzai ,  Takashi Shinoda ,  Shigeru Nobe

发明人： Jin Amanokura ,  Takafumi Sakurada ,  Sou Anzai ,  Takashi Shinoda ,  Shigeru Nobe

IPC分类号： H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  C23F1/18 ,  C23F1/26 ,  H01L21/30625 ,  H01L21/3212

摘要： The present invention relates to a metal polishing slurry containing abrasive grains, a metal-oxide-dissolving agent, and water, wherein the abrasive grains contain two or more abrasive grain species different from each other in average secondary particle diameter. Using the metal polishing slurry of the present invention, a metal polishing slurry can be obtained which gives a large polishing rate of an interlayer dielectric layer, and is high in the flatness of the polished surface. This metal polishing slurry can provide suitable method for a semiconductor device which is excellent in being made finer and thinner and in dimension precision and in electric characteristics, is high in reliability, and can attain a decrease in costs.

摘要翻译： 本发明涉及含有磨粒，金属氧化物溶解剂和水的金属抛光浆料，其中磨粒含有平均二次粒径彼此不同的两种或更多种磨粒。 使用本发明的金属研磨浆，可以得到层状电介质层的研磨速度大的金属研磨浆料，并且抛光面的平坦度高。 这种金属抛光浆料可以提供适合于制造更细和更薄，尺寸精度和电特性优异的可靠性高的半导体器件的方法，并且可以降低成本。

公开(公告)号：US20090283715A1

公开(公告)日：2009-11-19

申请号：US12307341

申请日：2007-07-03

申请人： Shigeru Nobe ,  Takashi Shinoda ,  Takafumi Sakurada ,  Takaaki Tanaka ,  Yoshikazu Oomori ,  Tadahiro Kimura ,  Masato Fukasawa

发明人： Shigeru Nobe ,  Takashi Shinoda ,  Takafumi Sakurada ,  Takaaki Tanaka ,  Yoshikazu Oomori ,  Tadahiro Kimura ,  Masato Fukasawa

IPC分类号： C09G1/02

CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： The invention relates to a polishing slurry for CMP containing abrasive and a fang and seam restrainer, wherein the fang and seam restrainer is at least one selected from polycarboxylic acids, polycarboxylic acid derivatives, or carboxylic-acid-containing copolymers. According to this, provided is a polishing slurry for CMP which restrains a fang phenomenon or a seam phenomenon that an insulated film near wiring regions is excessively polished, thereby giving a high flatness to a polished face.

摘要翻译： 本发明涉及一种用于CMP的研磨浆料，其含有研磨剂和防皱和接缝抑制剂，其中，所述方针和接缝限制器是选自多元羧酸，多元羧酸衍生物或含羧酸的共聚物中的至少一种。 据此，提供了抑制了布线区域附近的绝缘膜被过度抛光从而赋予抛光面的高平坦度的限制现象的CMP现象的研磨浆料。

公开(公告)号：US20090094901A1

公开(公告)日：2009-04-16

申请号：US12298342

申请日：2007-04-24

申请人： Takashi Shinoda ,  Shigeru Nobe ,  Takaaki Tanaka

发明人： Takashi Shinoda ,  Shigeru Nobe ,  Takaaki Tanaka

IPC分类号： B24B37/00 ,  H01L21/304 ,  H01L21/306 ,  C09K3/14

CPC分类号： H01L21/7684 ,  B24B37/044 ,  C09G1/02 ,  H01L21/3212

摘要： A CMP polishing liquid being capable of using in a chemical mechanical polishing comprising of: a first chemical mechanical polishing step of polishing a conductive substance layer of a substrate having an interlayer insulation film containing convex and concave regions on a surface thereof, a barrier layer coating along the surface of the interlayer insulation film, and the conductive substance layer coating the barrier layer while filling the concave regions, and thus exposing the barrier layer in the convex regions; and a second chemical mechanical polishing step of exposing the interlayer insulation film in the convex regions by polishing the barrier layer exposed in the first chemical mechanical polishing step; characterized in that a difference (B)−(A) is 650 {acute over (Å)} or less, wherein the (A) is a polishing amount of the interlayer insulation film in a field area when the interlayer insulation film in the field area having a width of 1,000 μm or more of the interlayer insulation film region formed on the substrate is polished to a depth of 400 {acute over (Å)} or more; and the (B) is a polishing amount of the interlayer insulation film in a stripe-shaped patterned area having a total width of 1,000 μm or more wherein a wiring metal region having a width of 90 μm and the interlayer insulation film region having a width of 10 μm are aligned alternately on the substrate when the interlayer insulation film in the field area having the width of 1,000 μm or more of the interlayer insulation film region formed on the substrate is polished to a depth of 400 {acute over (Å)} or more.

摘要翻译： 一种能够在化学机械抛光中使用的CMP抛光液，包括：第一化学机械抛光步骤，其在其表面上抛光具有包含凸凹区域的层间绝缘膜的基板的导电物质层，阻挡层涂层 沿着所述层间绝缘膜的表面，并且所述导电物质层在填充所述凹区域的同时涂覆所述阻挡层，从而使所述阻挡层暴露在所述凸部区域中。 以及第二化学机械抛光步骤，通过对在所述第一化学机械抛光步骤中暴露的所述阻挡层进行抛光来使所述凸起区域中的所述层间绝缘膜曝光; 其特征在于，差异（B） - （A）为650（锐锐度（））以下，其中，（A）是场内层间绝缘膜的场区域中的层间绝缘膜的研磨量 将形成在基板上的层间绝缘膜区域的宽度为1,000μm以上的区域抛光至深度为400（）以上的深度; （B）是总宽度为1000μm以上的条状图案区域中的层间绝缘膜的研磨量，其中宽度为90μm的布线金属区域和宽度为90μm的层间绝缘膜区域 当在衬底上形成的层间绝缘膜区域的宽度为1,000μm或更大的场区域中的层间绝缘膜被抛光到深度为400（）时，交替地在衬底上对准10微米。 或者更多。

公开(公告)号：US20070117394A1

公开(公告)日：2007-05-24

申请号：US11545787

申请日：2006-10-11

申请人： Takashi Shinoda ,  Shigeru Nobe ,  Takafumi Sakurada ,  Yoshikazu Oomori ,  Tadahiro Kimura

发明人： Takashi Shinoda ,  Shigeru Nobe ,  Takafumi Sakurada ,  Yoshikazu Oomori ,  Tadahiro Kimura

IPC分类号： H01L21/66 ,  H01L21/461

CPC分类号： C09G1/02 ,  C23F3/04 ,  H01L21/30625 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/7684 ,  H01L21/76865

摘要： The invention provides polishing slurry for CMP for suppressing corrosion of wiring lines of a conductive substance, or for suppressing bimetallic corrosion of a barrier conductor and conductive substance, by suppressing electrons from being transferred at near the boundaries between a barrier conductor and a conductive substance such as copper. The invention provides polishing slurry for CMP for polishing at least a conductor layer and a conductive substance layer in contact with the conductor layer, wherein the absolute value of the potential difference between the conductive substance and the conductor at 50±5° C. is 0.25 V or less in the polishing slurry when a positive electrode and a negative electrode of a potentiometer are connected to the conductive substance and the conductor, respectively. The polishing slurry for CMP preferably comprises at least one compound selected from heterocyclic compounds containing any one of hydroxyl group, carbonyl group, carboxyl group, amino group, amide group and sulfinyl group, and containing at least one of nitrogen and sulfur atoms.

摘要翻译： 本发明提供了通过抑制电子在阻挡导体和导电物质之间的边界附近转移而抑制导电物质的布线的腐蚀或抑制阻挡导体和导电物质的双金属腐蚀的CMP抛光浆料，例如 作为铜。 本发明提供了用于CMP的抛光浆料，用于至少对与导体层接触的导体层和导电物质层进行抛光，其中在50±5℃下导电物质与导体之间的电位差的绝对值为0.25 当电位计的正电极和负电极分别连接到导电物质和导体时，抛光浆料中的V或更小。 用于CMP的抛光浆料优选包含至少一种选自含有羟基，羰基，羧基，氨基，酰胺基和亚磺酰基中的任何一种的杂环化合物并且含有氮和硫原子中的至少一个的化合物。

公开(公告)号：US06439875B1

公开(公告)日：2002-08-27

申请号：US09568696

申请日：2000-05-11

申请人： Ryozo Morita ,  Ryoji Takashi ,  Satoshi Tomita ,  Takashi Shinoda ,  Keijiro Oka

发明人： Ryozo Morita ,  Ryoji Takashi ,  Satoshi Tomita ,  Takashi Shinoda ,  Keijiro Oka

IPC分类号： B29C4564

CPC分类号： B29C45/68 ,  B29C2045/685

摘要： Mold clamping apparatus is disclosed which includes: an electrically-operated movable-platen-driving device of ball-screw type having a first ball-screw shaft supported by one of a movable and a rear platens, a first ball-nut threaded-engaged with the first ball-screw shaft and supported by the other of the movable and rear platens, and a movable-platen driving device for rotating the first ball-screw shaft and nut relative to each other so as to generate a relative longitudinal motion of the first ball-screw shaft and nut so that said movable platen is moved toward and away from a stationary platen to close and open the mold; a pressure-generating cylinder device having a pressure-generating piston moved by the relative longitudinal motion of the first ball-screw shaft and nut in order to generate a hydraulic pressure; and a mold clamping cylinder device adapted to generate a mold clamping force based on the hydraulic pressure applied from the pressure-generating cylinder device; and an engaging device which is operable for connecting a mold clamping ram of the mold clamping cylinder device with the movable platen, for applying the mold clamping force to the movable platen. The method of controlling operation of the apparatus is also disclosed.

摘要翻译： 公开了一种模具夹紧装置，其包括：滚珠丝杠型电动可动台板驱动装置，具有由可动和后台板之一支撑的第一滚珠丝杠轴，与第一滚珠丝杠螺纹接合 所述第一滚珠丝杠轴由所述可移动和后台板中的另一个支撑;以及可动台板驱动装置，用于相对于彼此旋转所述第一滚珠丝杠轴和螺母，以便产生所述第一滚珠丝杠轴的相对纵向运动 滚珠丝杠轴和螺母，使得所述可动压板朝向和远离静止压板移动以关闭和打开模具; 压力发生缸装置，其具有通过第一滚珠丝杠轴和螺母的相对纵向运动而移动的压力产生活塞，以产生液压; 以及模具夹紧缸装置，其适于基于从所述产生压力装置施加的液压产生合模力; 以及接合装置，其可操作以将合模缸装置的模具夹紧柱塞与可动压板连接，以将模具夹紧力施加到可动压板。 还公开了该装置的操作控制方法。