公开(公告)号：US06861906B2

公开(公告)日：2005-03-01

申请号：US10204446

申请日：2001-05-11

申请人： Kazutomi Mori ,  Shintaro Shinjo ,  Kousei Maemura ,  Teruyuki Shimura ,  Kazuhiko Nakahara ,  Tadashi Takagi

发明人： Kazutomi Mori ,  Shintaro Shinjo ,  Kousei Maemura ,  Teruyuki Shimura ,  Kazuhiko Nakahara ,  Tadashi Takagi

IPC分类号： H01L27/06 ,  H03F3/19 ,  H03F3/21 ,  H03F3/68

CPC分类号： H01L27/0605 ,  H03F3/19 ,  H03F3/211 ,  H03F2203/21178

摘要： A high-frequency semiconductor device according to the present invention achieves improvements in degradation of noise characteristics and a reduction in gain, and an improvement in reduction in power efficiency while suppressing a concentration of a current to multifinger HBTs. In the multifinger HBTs constituting a first stage and an output stage of an amplifier 10, basic HBTs 14 that constitute the multifinger HBT 12 corresponding to the first stage, are each made up of an HBT 14a and an emitter resistor 14b connected to the corresponding emitter of the HBT 14a, whereas basic HBTs 18 that constitute the multifinger HBT 16 corresponding to the output stage, are each comprised of an HBT 18a and a base resistor 18c connected to the corresponding base of the HBT 18a. The high-frequency semiconductor device according to the present invention is useful as a high output power amplifier used in satellite communications, ground microwave communications, mobile communications, etc.

摘要翻译： 根据本发明的高频半导体器件实现了噪声特性的降低和增益的降低的改善，并且在抑制电流到多焦HBT的浓度的同时，提高了功率效率的降低。 在构成放大器10的第一级和输出级的多画面HBT中，构成对应于第一级的多画面HBT 12的基本HBT 14分别由连接到相应发射极的HBT 14a和发射极电阻14b组成 而构成与输出级相对应的多功能HBT16的基本HBT 18分别由连接到HBT 18a的相应基座的HBT 18a和基极电阻18c组成。 根据本发明的高频半导体器件可用作卫星通信，地面微波通信，移动通信等中使用的高输出功率放大器。

公开(公告)号：US5973543A

公开(公告)日：1999-10-26

申请号：US825220

申请日：1997-03-27

申请人： Teruyuki Shimura

发明人： Teruyuki Shimura

IPC分类号： H03F3/20 ,  G05F3/22 ,  H03F3/04 ,  G05F1/10

CPC分类号： G05F3/22

摘要： A bias circuit for a bipolar transistor includes a constant voltage source connected to a base electrode of the bipolar transistor; and a resistor connected in series between the constant voltage source and the base electrode of the bipolar transistor. By selecting an appropriate resistance for this resistor, the bias point moves due to a change in the voltage drop across the resistor. The change occurs because the base current flowing through the resistor changes, whereby the operating class of the transistor changes, resulting in a high efficiency at a desired output power.

摘要翻译： 用于双极晶体管的偏置电路包括连接到双极晶体管的基极的恒压源; 以及串联连接在双极晶体管的恒定电压源和基极之间的电阻器。 通过为该电阻选择合适的电阻，偏置点由于电阻上的电压降的变化而移动。 发生这种变化是因为流过电阻的基极电流发生变化，晶体管的工作类别发生变化，导致所需输出功率的效率高。

公开(公告)号：US4977100A

公开(公告)日：1990-12-11

申请号：US417288

申请日：1989-10-05

申请人： Teruyuki Shimura

发明人： Teruyuki Shimura

IPC分类号： H01L29/812 ,  H01L21/285 ,  H01L21/338 ,  H01L29/417 ,  H01L29/423

CPC分类号： H01L29/66878 ,  H01L21/28587 ,  H01L29/42316

摘要： A method of producing a MESFET which includes forming a refractory metal gate structure on an active layer formed in or on a semiconductor substrate. Source and drain regions optionally with extensions, are formed adjacent the gate structure. An insulating film is deposited over the partly formed structure to form a film portion on the semiconductor substrate which is separated from further film portions formed over the source and drain regions. A flattening resist is deposited over the insulating film and etched to expose only the film portion on the gate structure, while the gate structure itself and the resist protects the film portions on the source and drain regions. The film portion over the gate structure can thus be removed without damage to the gate structure or the remainder of the insulating film. The process produces with increased yield and more consistent properties in that the danger of attacking the refractory metal gate structure during operations succeeding its formation is significantly reduced.

摘要翻译： 一种MESFET的制造方法，其特征在于，在形成于半导体基板中的有源层上形成难熔金属栅极结构。 源极和漏极区域可选地具有延伸部分，邻近栅极结构形成。 在部分形成的结构上沉积绝缘膜，以在半导体衬底上形成薄膜部分，其与形成在源区和漏区上的其它膜部分分离。 平坦化抗蚀剂沉积在绝缘膜上并被蚀刻以仅暴露栅极结构上的膜部分，而栅极结构本身和抗蚀剂保护源极和漏极区域上的膜部分。 因此，能够去除栅极结构上的膜部分，而不会损坏栅极结构或绝缘膜的其余部分。 该方法产生具有增加的产量和更一致的性质，因为在其形成过程中的操作期间攻击难熔金属栅极结构的危险性显着降低。

公开(公告)号：US20140232467A1

公开(公告)日：2014-08-21

申请号：US14237776

申请日：2012-08-24

申请人： Kenji Mukai ,  Kenichi Horiguchi ,  Morishige Hieda ,  Katsuya Kato ,  Yoshihito Hirano ,  Kazuya Yamamoto ,  Hiroyuki Joba ,  Teruyuki Shimura

发明人： Kenji Mukai ,  Kenichi Horiguchi ,  Morishige Hieda ,  Katsuya Kato ,  Yoshihito Hirano ,  Kazuya Yamamoto ,  Hiroyuki Joba ,  Teruyuki Shimura

IPC分类号： H03F3/195

CPC分类号： H03F3/195 ,  H03F1/0277 ,  H03F3/211 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/255 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2203/7206 ,  H03F2203/7209

摘要： A high-frequency amplifier module includes a driver-stage amplifier 3 that amplifies an RF signal input thereto from an RF input terminal 1, and a final-stage amplifier 5 that amplifies the signal amplified by the driver-stage amplifier 3 and outputs the signal after the amplification to an RF output terminal 7. The driver-stage amplifier 3 is fabricated on a silicon substrate 11, while the final-stage amplifier 5 is fabricated on a gallium arsenide substrate. This configuration downsizes the cost while maintaining a high-frequency characteristic comparable to that in the case where all components of an entire module are fabricated on a gallium arsenide substrate 71.

摘要翻译： 高频放大器模块包括：放大从RF输入端子1输入的RF信号的驱动级放大器3和放大由驱动级放大器3放大的信号的末级放大器5，并输出信号 在放大到RF输出端子7之后。驱动级放大器3制造在硅衬底11上，而最后级放大器5制造在砷化镓衬底上。 这种结构使成本降低，同时保持与在砷化镓基板71上制造整个模块的所有部件的情况相当的高频特性。

公开(公告)号：US07907009B2

公开(公告)日：2011-03-15

申请号：US12514159

申请日：2006-11-30

申请人： Kazutomi Mori ,  Kazuhiro Iyomasa ,  Akira Ohta ,  Teruyuki Shimura ,  Masatoshi Nakayama

发明人： Kazutomi Mori ,  Kazuhiro Iyomasa ,  Akira Ohta ,  Teruyuki Shimura ,  Masatoshi Nakayama

IPC分类号： H03F3/68

CPC分类号： H03F1/0277 ,  H03F1/565 ,  H03F3/191 ,  H03F3/211 ,  H03F3/72 ,  H03F2200/318 ,  H03F2200/366 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/456 ,  H03F2203/7233 ,  H03F2203/7236 ,  H03H7/38

摘要： Provided is a high frequency amplifier including two amplifying elements of different element sizes connected in parallel and switching the amplifying elements in accordance with a level of output power. In particular, the high frequency amplifier includes an output matching circuit for matching to characteristic impedance (50 ohms) both when the output power is high and low, and increasing impedance when the turned-off amplifying element is viewed from a connection node on an output side of the two amplifying elements. Consequently, characteristics such as high output power and high efficiency can be achieved and it is possible to prevent an amplified high frequency signal from passing around to a matching circuit on a turned-off amplifying element side.

摘要翻译： 提供了包括并联连接的不同元件尺寸的两个放大元件的高频放大器，并且根据输出功率的电平来切换放大元件。 特别地，高频放大器包括输出匹配电路，用于在输出功率高和低时匹配特性阻抗（50欧姆），并且当输出端上的连接节点观察关断放大元件时增加阻抗 一侧的两个放大元件。 因此，可以实现诸如高输出功率和高效率的特性，并且可以防止放大的高频信号在关闭放大元件侧通过到匹配电路。

公开(公告)号：US07605648B2

公开(公告)日：2009-10-20

申请号：US11947831

申请日：2007-11-30

申请人： Kazuya Yamamoto ,  Satoshi Suzuki ,  Tomoyuki Asada ,  Takayuki Matsuzuka ,  Teruyuki Shimura

发明人： Kazuya Yamamoto ,  Satoshi Suzuki ,  Tomoyuki Asada ,  Takayuki Matsuzuka ,  Teruyuki Shimura

IPC分类号： H03F1/14

CPC分类号： H03F1/0277 ,  H03F1/0261 ,  H03F1/30 ,  H03F3/195 ,  H03F2200/411 ,  H03F2200/451

摘要： A power amplifier according to the present invention is operated by switching a main power amplifier and a subsidiary power amplifier. The idle current of the subsidiary power amplifier is smaller than the idle current of the main power amplifier. Each of the main power amplifier and the subsidiary power amplifier has a former amplification element for amplifying RF signals, a latter amplification element for amplifying output signals from the former amplification element, a former bias circuit for driving the former amplification elements, and a latter bias circuit for driving the latter amplification elements, respectively. The interval between the latter amplification element of the main power amplifier and the latter amplification element of the subsidiary power amplifier is not more than 100 μm. The interval between the latter amplification element of the main power amplifier and the latter bias circuit of the subsidiary power amplifier is not less than 200 μm.

摘要翻译： 根据本发明的功率放大器通过切换主功率放大器和辅助功率放大器来操作。 辅助功率放大器的空闲电流小于主功率放大器的空闲电流。 每个主功率放大器和辅助功率放大器具有用于放大RF信号的前置放大元件，用于放大来自前一放大元件的输出信号的后一放大元件，用于驱动前一放大元件的前一偏置电路，以及后一偏置 电路分别用于驱动后面的放大元件。 主功率放大器的后一放大元件与辅助功率放大器的后一放大元件之间的间隔不大于100um。 主功率放大器的后一个放大元件与辅助功率放大器的后一个偏置电路之间的间隔不小于200μm。

公开(公告)号：US06271098B1

公开(公告)日：2001-08-07

申请号：US09552694

申请日：2000-04-19

申请人： Shinichi Miyakuni ,  Teruyuki Shimura

发明人： Shinichi Miyakuni ,  Teruyuki Shimura

IPC分类号： H01L21331

CPC分类号： H01L29/66318 ,  H01L29/0817 ,  H01L29/7371

摘要： A heterojunction bipolar transistor is provided with a ballast resistor layer in an emitter layer which prevents the current amplification factor &bgr; from decreasing. The n-GaAs carrier supply layer having a specified carrier concentration is formed between the ballast resistor layer and the n-AlGaAs layer.

摘要翻译： 异质结双极晶体管在发射极层中设置有镇流电阻层，防止电流放大因子β降低。具有特定载流子浓度的n-GaAs载流子供应层形成在镇流电阻层和n-AlGaAs层之间 。

公开(公告)号：US5726468A

公开(公告)日：1998-03-10

申请号：US614688

申请日：1996-03-13

申请人： Tomoki Oku ,  Hirofumi Nakano ,  Shinichi Miyakuni ,  Teruyuki Shimura ,  Ryo Hattori

发明人： Tomoki Oku ,  Hirofumi Nakano ,  Shinichi Miyakuni ,  Teruyuki Shimura ,  Ryo Hattori

IPC分类号： H01L29/41 ,  H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/331 ,  H01L23/52 ,  H01L29/205 ,  H01L29/423 ,  H01L29/43 ,  H01L29/73 ,  H01L29/732 ,  H01L29/737 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： H01L29/7371 ,  H01L29/42304

摘要： A semiconductor device includes a semiconductor substrate; a first active layer disposed on the semiconductor substrate; a second active layer disposed on the first active layer; a first electrode including a lower stage disposed on the second active layer and an upper stage disposed on the lower stage and having an overhanging portion protruding from the lower stage; an insulating film continuously covering a surface of the second active layer, a side surface of the lower stage of the first electrode, and a lower surface and a side surface of the overhanging portion of the upper stage; and a second electrode disposed on the surface of the first active layer at opposite sides of the second active layer, self-aligned with the second active layer. The distance between the second electrode and the second active layer is minimized and the thickness of the second electrode can be about 7000 .ANG., minimizing the resistance of the first active layer and improving high frequency characteristics. Electrical separation between the first and second active layers can be achieved reliably. Recombination at the surface of the second active layer is suppressed.

摘要翻译： 半导体器件包括半导体衬底; 设置在所述半导体衬底上的第一有源层; 设置在所述第一有源层上的第二有源层; 第一电极，其包括设置在第二有源层上的下层和设置在下层上的上层，具有从下层突出的突出部; 绝缘膜，连续地覆盖第二有源层的表面，第一电极的下层的侧表面，以及上层的突出部的下表面和侧表面; 以及第二电极，其设置在所述第二有源层的与所述第二有源层自对准的所述第二有源层的相对侧的所述表面上。 第二电极和第二有源层之间的距离被最小化，并且第二电极的厚度可以是约7000，使第一有源层的电阻最小化并提高高频特性。 可以可靠地实现第一和第二有源层之间的电气分离。 第二活性层的表面的重组被抑制。

公开(公告)号：US5698871A

公开(公告)日：1997-12-16

申请号：US542945

申请日：1995-10-13

申请人： Masayuki Sakai ,  Teruyuki Shimura

发明人： Masayuki Sakai ,  Teruyuki Shimura

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/205 ,  H01L29/737 ,  H01L31/0328

CPC分类号： H01L29/7371

摘要： A heterojunction bipolar transistor includes a compound semiconductor substrate, a collector layer disposed on the compound semiconductor substrate, a base layer disposed on the collector layer, the base layer being a semiconductor having a band gap energy and including an internal base region and an external base region, and an emitter layer disposed on the base layer and being a semiconductor having a band gap energy larger than the band gap energy of the semiconductor of the base layer. The base layer is larger in area than the emitter layer by the external base region. The external base region is sandwiched by insulating films at the external base region. Therefore, without ion-implantation to make the resistance of the collector layer below the external base region higher, i.e., without increasing the base resistance, the base-collector capacitance is reduced, resulting in an HBT having an improved high frequency gain.

摘要翻译： 异质结双极晶体管包括化合物半导体衬底，设置在化合物半导体衬底上的集电极层，设置在集电极层上的基极层，基极层是具有带隙能的半导体，并且包括内部基极区域和外部基极 以及设置在基底层上并且具有比基底层的半导体的带隙能量大的带隙能量的半导体的发射极层。 基底层的外部基极区域的面积比发射极层的面积大。 外部基极区域被外部基极区域的绝缘膜夹持。 因此，没有离子注入使得集电极层的电阻在外部基极区域以下更高，即不增加基极电阻，基极集电极电容减小，导致具有改善的高频增益的HBT。

公开(公告)号：US5414273A

公开(公告)日：1995-05-09

申请号：US202583

申请日：1994-02-28

申请人： Teruyuki Shimura ,  Naohito Yoshida

发明人： Teruyuki Shimura ,  Naohito Yoshida

IPC分类号： H01L29/205 ,  H01L21/331 ,  H01L29/73 ,  H01L29/737 ,  H01L27/12 ,  H01L29/161 ,  H01L45/00

CPC分类号： H01L29/7371 ,  Y10S977/759 ,  Y10S977/761

摘要： A heterojunction bipolar transistor includes a multiquantum barrier structure as part of the collector and contacting the base. The MQB has an energy band structure in which the height of the effective potential barrier of the MQB increases in steps from the base into the collector. Therefore, an electric field in the collector in the vicinity of the base-collector interface is relaxed and intervalley scattering of electrons is suppressed whereby a reduction in electron mobility due to the intervalley scattering is suppressed, reducing transit time of electrons in the collector.

摘要翻译： 异质结双极晶体管包括作为收集器的一部分并与基底接触的多量子势垒结构。 MQB具有能带结构，其中MQB的有效势垒的高度从基极逐渐增加到集电极。 因此，集电体界面附近的集电体的电场被放宽，并且电子的间隔散射被抑制，由此抑制由于间隔散射引起的电子迁移率的降低，从而减小了集电体中电子的传播时间。