公开(公告)号：US06069369A

公开(公告)日：2000-05-30

申请号：US957732

申请日：1997-10-24

申请人： Toshikazu Nishino ,  Ushio Kawabe ,  Yoshinobu Tarutani ,  Shinya Kominami ,  Toshiyuki Aida ,  Tokuumi Fukazawa ,  Mutsuko Hatano

发明人： Toshikazu Nishino ,  Ushio Kawabe ,  Yoshinobu Tarutani ,  Shinya Kominami ,  Toshiyuki Aida ,  Tokuumi Fukazawa ,  Mutsuko Hatano

IPC分类号： H01L39/22 ,  C01G1/00 ,  C01G3/00 ,  C23C14/08 ,  C30B29/22 ,  H01B12/00 ,  H01L39/24 ,  H01L29/06

CPC分类号： H01L39/2496 ,  H01L39/225 ,  H01L39/228 ,  H01L2924/0002 ,  Y10S505/70 ,  Y10S505/702 ,  Y10S505/703 ,  Y10S505/704

摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.

摘要翻译： 超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。 构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。 选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜 另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。

公开(公告)号：US5250506A

公开(公告)日：1993-10-05

申请号：US647234

申请日：1991-01-29

申请人： Shinichiroh Saitoh ,  Yoshinobu Tarutani ,  Tokuumi Fukazawa ,  Masahiko Hiratani ,  Toshikazu Nishino ,  Haruhiro Hasegawa ,  Ushio Kawabe ,  Kazumasa Takagi ,  Mitsuo Suga

发明人： Shinichiroh Saitoh ,  Yoshinobu Tarutani ,  Tokuumi Fukazawa ,  Masahiko Hiratani ,  Toshikazu Nishino ,  Haruhiro Hasegawa ,  Ushio Kawabe ,  Kazumasa Takagi ,  Mitsuo Suga

IPC分类号： H01L39/14 ,  H01L39/22 ,  B05D5/12 ,  H01B12/00

CPC分类号： H01L39/225 ,  H01L39/146

摘要： A superconductive element at least comprising first and second superconductive electrodes composed of an oxide superconductor material and a semiconductor film composed of an oxide semiconductor material put between the first and second superconductive electrodes and disposed in adjacent with the first and the second superconductive electrodes, in which the semiconductor film is formed with an oxide comprising rare earth elements other than Pr, Ba and Cu as the main ingredient element or an oxide comprising predetermined amount of rare earth elements other than Pr, predetermined amount of Pr, Ba and Cu as the main ingredient element. Extremely fine size is no more necessary to enable fabrication with the existent fine fabrication technic.

摘要翻译： 一种超导元件，至少包括由氧化物超导体材料构成的第一和第二超导电极以及由位于第一和第二超导电极之间并与第一和第二超导电极相邻设置的氧化物半导体材料构成的半导体膜，其中 半导体膜由包含除Pr，Ba和Cu之外的稀土元素作为主要成分的氧化物或包含预定量的Pr以外的稀土元素的氧化物形成，预定量的Pr，Ba和Cu作为主要成分 元件。 非常精细的尺寸不再需要使用现有的精细制造技术进行制造。

公开(公告)号：US5126315A

公开(公告)日：1992-06-30

申请号：US155806

申请日：1988-02-16

申请人： Toshikazu Nishino ,  Ushio Kawabe ,  Yoshinobu Tarutani ,  Shinya Kominami ,  Toshiyuki Aida ,  Tokuumi Fukazawa ,  Mutsuko Hatano

发明人： Toshikazu Nishino ,  Ushio Kawabe ,  Yoshinobu Tarutani ,  Shinya Kominami ,  Toshiyuki Aida ,  Tokuumi Fukazawa ,  Mutsuko Hatano

IPC分类号： H01L39/22 ,  C01G1/00 ,  C01G3/00 ,  C23C14/08 ,  C30B29/22 ,  H01B12/00 ,  H01L39/24

CPC分类号： H01L39/2496 ,  H01L39/225 ,  H01L39/228 ,  H01L2924/0002 ,  Y10S505/70 ,  Y10S505/702 ,  Y10S505/703 ,  Y10S505/704

摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.

公开(公告)号：US4842917A

公开(公告)日：1989-06-27

申请号：US88380

申请日：1987-08-24

申请人： Tomoyuki Ohno ,  Yoshihiro Shiroishi ,  Sadao Hishiyama ,  Hiroyuki Suzuki ,  Takaaki Shirakura ,  Shinya Matsuoka ,  Makoto Sano ,  Takao Nakamura ,  Kazumasa Takagi ,  Tokuumi Fukazawa ,  Kenzo Susa

发明人： Tomoyuki Ohno ,  Yoshihiro Shiroishi ,  Sadao Hishiyama ,  Hiroyuki Suzuki ,  Takaaki Shirakura ,  Shinya Matsuoka ,  Makoto Sano ,  Takao Nakamura ,  Kazumasa Takagi ,  Tokuumi Fukazawa ,  Kenzo Susa

IPC分类号： G11B5/73

CPC分类号： G11B5/7325 ,  Y10S428/90 ,  Y10T428/24355

摘要： A magnetic recording medium having a magnetic film formed on a substrate directly or through an underlayer from an alloy containing Co as a principal component. The central line average surface roughness Ra and maximum surface roughness Rmax of the magnetic film in a direction perpendicular to the direction of magnetic recording are selected so as to fall within the ranges of 1 nm.ltoreq.Ra.ltoreq.20 nm and Rmax.ltoreq.25 Ra, respectively, and the in-plane magnetic anisotropy energy Ku of the magnetic film is selected to fall within the range of 0.ltoreq.Ku.ltoreq.8.times.10.sup.5 erg/cm.sup.3. Thus, it is possible to minimize the value of modulation which represents the degree of variation of read output on the same circumference of a magnetic disk. It is also possible to reduce the noise generated in read and write operations by forming the magnetic film so as have no crystallographic orientation.

摘要翻译： 一种磁记录介质，其具有直接或通过底层从基板上形成的含有Co作为主要成分的合金的磁性膜。 选择磁性膜在垂直于磁记录方向的方向上的中心线平均表面粗糙度Ra和最大表面粗糙度Rmax，使其落入1nm≤Ra<20nm的范围内，并且Rmax < / = 25Ra，磁性膜的面内磁各向异性能Ku被选择在0≤K≤5×10 5Ω/ cm 3的范围内。 因此，可以将表示在磁盘的同一圆周上的读取输出的变化程度的调制值最小化。 也可以通过形成磁性膜来减少读取和写入操作中产生的噪声，从而没有结晶取向。

公开(公告)号：US3951729A

公开(公告)日：1976-04-20

申请号：US432516

申请日：1974-01-11

申请人： Kazumasa Takagi ,  Tokuumi Fukazawa ,  Mitsuru Ishii ,  Seigo Kishino

发明人： Kazumasa Takagi ,  Tokuumi Fukazawa ,  Mitsuru Ishii ,  Seigo Kishino

IPC分类号： C01G15/00 ,  C30B15/00 ,  C30B15/20 ,  H01L21/208 ,  B01J17/18

CPC分类号： C30B15/00 ,  C30B29/28 ,  Y10S117/902

摘要： In growing single crystals of gadolinium gallium garnet, dysprosium gallium garnet and the like according to the Czochralski method, when the velocity of rotation of the crystal during growth of a slender part is made lower than the velocity of rotation of the crystal during growth of a body portion, single crystals free of defects such as dislocation or facet can be obtained.

摘要翻译： 在生长单晶钆镓石榴石，镝镓石榴石等时，根据切克劳斯基法，当细长部分生长过程中晶体的旋转速度低于晶体生长期间的旋转速度时 主体部分，可以获得没有诸如位错或小面的缺陷的单晶。

公开(公告)号：US06486756B2

公开(公告)日：2002-11-26

申请号：US09816240

申请日：2001-03-26

申请人： Yoshinobu Tarutani ,  Kazuo Saitoh ,  Kazumasa Takagi ,  Yoshihisa Soutome ,  Tokuumi Fukazawa ,  Akira Tsukamoto

发明人： Yoshinobu Tarutani ,  Kazuo Saitoh ,  Kazumasa Takagi ,  Yoshihisa Soutome ,  Tokuumi Fukazawa ,  Akira Tsukamoto

IPC分类号： H03F1700

CPC分类号： H03K19/1952 ,  H01L27/18 ,  H03F19/00

摘要： A superconductor signal amplifier which receives an extremely small high-frequency signal having a frequency of tens of GHz generated in a superconductive circuit, amplifies the voltage of the high-frequency signal without a decrease in frequency, and outputs the thus amplified high-frequency signal from the superconductive circuit. At an output part of a single flux quantum circuit using a flux quantum as a binary information carrier, there are provided a superconductive junction line for flux quantum transmission and a splitter for simultaneously producing two flux quanta from a flux quantum. According to the number of plural series-connected SQUIDs, a plurality of flux quantum signals are generated and input to the plural series-connected SQUIDs so that the SQUIDs are simultaneously switched to a voltage state. In each SQUID pair comprising two SQUIDs, a part of an inductor is shared by the two SQUIDs for reduction in inductance, thereby increasing an output voltage of the series-connected SQUIDs. Furthermore, a magnetic shielding film formed under each SQUID is electrically isolated from ground to prevent a signal delay due to a parasitic capacitance.

摘要翻译： 接收在超导电路中产生的具有数十GHz频率的极小的高频信号的超导体信号放大器放大高频信号的电压而不降低频率，并输出这样放大的高频信号 从超导电路。 在使用磁通量子作为二进制信息载体的单个量子电路的输出部分，提供了用于磁通量子传输的超导结线和用于从磁通量子同时产生两个通量量子的分离器。 根据多个串联SQUID的数量，产生多个通量量子信号并将其输入到多个串联连接的SQUID，使得SQUID同时切换到电压状态。 在包含两个SQUID的每个SQUID对中，电感器的一部分由两个SQUID共享以减小电感，从而增加串联连接的SQUID的输出电压。 此外，形成在每个SQUID下方的磁屏蔽膜与地电隔离以防止由寄生电容引起的信号延迟。

公开(公告)号：US06310488B1

公开(公告)日：2001-10-30

申请号：US09451910

申请日：1999-12-01

申请人： Haruhiro Hasegawa ,  Yoshinobu Tarutani ,  Tokuumi Fukazawa ,  Kazumasa Takagi

发明人： Haruhiro Hasegawa ,  Yoshinobu Tarutani ,  Tokuumi Fukazawa ,  Kazumasa Takagi

IPC分类号： H03K19195

CPC分类号： H03K19/1952

摘要： In a superconductive single flux quantum logic circuit having two superconductive closed loops each comprising a Josephson junction and one or more inductors, a load inductance part is comprised of an inductor and a Josephson junction and two or more means for supplying a signal current are included. The load inductance part is made by one or more inductors and means for applying flux via the inductors is included.

摘要翻译： 在具有两个包含约瑟夫逊结和一个或多个电感器的两个超导闭环的超导单通量量子逻辑电路中，负载电感部分包括电感器和约瑟夫逊结，并且包括用于提供信号电流的两个或更多个装置。 负载电感部分由一个或多个电感器制成，并且包括用于通过电感器施加磁通的装置。

公开(公告)号：US5552375A

公开(公告)日：1996-09-03

申请号：US192573

申请日：1994-02-07

申请人： Toshikazu Nishino ,  Ushio Kawabe ,  Yoshinobu Tarutani ,  Shinya Kominami ,  Toshiyuki Aida ,  Tokuumi Fukazawa ,  Mutsuko Hatano

发明人： Toshikazu Nishino ,  Ushio Kawabe ,  Yoshinobu Tarutani ,  Shinya Kominami ,  Toshiyuki Aida ,  Tokuumi Fukazawa ,  Mutsuko Hatano

IPC分类号： H01L39/22 ,  C01G1/00 ,  C01G3/00 ,  C23C14/08 ,  C30B29/22 ,  H01B12/00 ,  H01L39/24

CPC分类号： H01L39/2496 ,  H01L39/225 ,  H01L39/228 ,  H01L2924/0002 ,  Y10S505/70 ,  Y10S505/702 ,  Y10S505/703 ,  Y10S505/704

摘要： Disclosed are methods of forming superconducting devices including a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.

摘要翻译： 公开了形成超导体的方法，包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。 构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。 选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜 另外，超导体的晶体的c轴基本上垂直于流经该超导体的电流的方向。

公开(公告)号：US5380704A

公开(公告)日：1995-01-10

申请号：US113006

申请日：1993-08-30

申请人： Yoshinobu Tarutani ,  Tokuumi Fukazawa ,  Uki Kabasawa ,  Kazumasa Takagi ,  Akira Tsukamoto ,  Masahiko Hiratani ,  Toshikazu Nishino

发明人： Yoshinobu Tarutani ,  Tokuumi Fukazawa ,  Uki Kabasawa ,  Kazumasa Takagi ,  Akira Tsukamoto ,  Masahiko Hiratani ,  Toshikazu Nishino

IPC分类号： H01L29/43 ,  H01L29/49 ,  H01L29/786 ,  H01L39/22 ,  B05D5/12 ,  H01B12/00

CPC分类号： H01L29/78696 ,  H01L29/437 ,  H01L29/4908 ,  H01L29/78645 ,  H01L29/7869 ,  H01L39/146

摘要： Disclosed herein is a superconducting field effect transistor (FET) which has at least an active region formed from a film of oxide normal conductor, a plurality of electrodes formed from a film of oxide superconductor, and a means to control the current which flows between the electrodes through the active region. Having a much greater electrode distance than the conventional superconducting device, it can be produced easily by lithography without resorting to special techniques.

摘要翻译： 本发明公开了一种超导场效应晶体管（FET），其至少具有由氧化物正导体膜形成的有源区，由氧化物超导体的膜形成的多个电极，以及控制在氧化物超导体之间流动的电流的装置 电极通过有源区。 具有比常规超导装置更大的电极距离，其可以通过光刻而容易地制造，而不需要采用特殊技术。

公开(公告)号：US5256897A

公开(公告)日：1993-10-26

申请号：US729867

申请日：1991-07-10

申请人： Haruhiro Hasegawa ,  Toshiyuki Aida ,  Toshikazu Nishino ,  Mutsuko Hatano ,  Hideaki Nakane ,  Tokuumi Fukazawa

发明人： Haruhiro Hasegawa ,  Toshiyuki Aida ,  Toshikazu Nishino ,  Mutsuko Hatano ,  Hideaki Nakane ,  Tokuumi Fukazawa

IPC分类号： H01L39/22 ,  H01L29/161 ,  H01L29/48 ,  H01L29/56

CPC分类号： H01L39/22 ,  H01L39/228

摘要： An oxide superconducting device has a junction structure composed of at least one oxide superconductor and at least one insulator in which carriers have been generated. As the insulator in which carriers have been generated, there can be used, for example, SrTiO.sub.3 doped with Nb. With such a device, rectifying characteristics can be attained in the junction.

摘要翻译： 氧化物超导装置具有由至少一个氧化物超导体和至少一个其中已经产生载流子的绝缘体组成的结结构。 作为已经生成载流子的绝缘体，可以使用例如掺杂有Nb的SrTiO 3。 利用这种装置，可以在接合处获得整流特性。