公开(公告)号：US5406371A

公开(公告)日：1995-04-11

申请号：US918761

申请日：1992-07-27

申请人： Kiyokazu Sakai ,  Shinichi Nagata ,  Osamu Tomita ,  Yo Tajima

发明人： Kiyokazu Sakai ,  Shinichi Nagata ,  Osamu Tomita ,  Yo Tajima

IPC分类号： G01J4/04 ,  G01N21/23 ,  G01J4/00

CPC分类号： G01N21/23 ,  G01J4/04

摘要： In order to efficiently obtain data for calculating retardation values at a plurality of wavelengths, a sample having birefringence is placed between a polarizer and an analyzer, which are maintained in a parallel nicol relation to each other and rotated about an optical axis of measuring light. White measuring light is applied through the polarizer so that the light being passed through the sample and transmitted through the analyzer is received by a polychromator. A one-dimensional optical sensor is arranged on an outgoing imaging surface of the polychromator, to simultaneously detect transmitted light intensity values of a plurality of wavelengths. Since transmitted light intensity values of a plurality of wavelengths are obtained every polarization rotation angle of the polarizer and the analyzer, it is possible to obtain dispersion of retardation values with respect to wavelengths and the like by processing the data.

摘要翻译： 为了有效地获得用于计算多个波长的延迟值的数据，具有双折射的样品被放置在偏振器和分析器之间，它们彼此保持平行，并且围绕测量光的光轴旋转。 通过偏振器施加白色测量光，使得通过样品并透射通过分析器的光被多色分光器接收。 一维光学传感器布置在多色板的输出成像表面上，以同时检测多个波长的透射光强度值。 由于偏振器和分析器的每个偏振旋转角度都获得多个波长的透射光强度值，所以可以通过处理数据来获得相对于波长等的延迟值的色散。

公开(公告)号：US5114888A

公开(公告)日：1992-05-19

申请号：US612691

申请日：1990-11-15

申请人： Kenichi Mizuno ,  Yo Tajima ,  Masakazu Watanabe

发明人： Kenichi Mizuno ,  Yo Tajima ,  Masakazu Watanabe

IPC分类号： C04B35/593

CPC分类号： C04B35/5935

摘要： Silicon nitride base sintered body consists of: 1 to 20 wt % (as oxides) of at least one of rare earth elements; 0.5 to 8 wt % of V (as V.sub.2 O.sub.5); 0.5 to 8 wt % (as oxides) of at least one of Nb, Ta, Cr, Mo and W; sum of the Va and VIa group elements according to the Periodic Table of the International Version (as oxides) being 1 to 10 wt %; and balance silicon nitride. It has high strength of 690-880 MPa (70-90 kgf/mm.sup.2) and high oxidation resistance both at 1350.degree. C. It is produced by 2 stage gas-pressure sintering in pressurized N.sub.2 atmosphere, primarily at 1700.degree.-1900.degree. C. at 1 MPa (10 atm) or less and secondarily at 1600.degree.-1900 C. at 10 MPa (100 atm) or above.

摘要翻译： 氮化硅基烧结体由以下组成：1〜20重量％（作为氧化物）的稀土元素中的至少一种; 0.5至8重量％的V（作为V 2 O 5）; Nb，Ta，Cr，Mo和W中的至少一种为0.5〜8重量％（作为氧化物） 根据国际版本（作为氧化物）的周期表，Va和VIa族元素的总和为1至10wt％; 并平衡氮化硅。 它在1350℃下具有690-880MPa（70-90kgf / mm2）的高强度和高抗氧化性。它在加压N 2气氛中，主要在1700°-1900℃下通过2级气压烧结 在10MPa（100大气压）以上，在1MPa（10atm）以下，二次在1600〜1900℃。