公开(公告)号：US20060125082A1

公开(公告)日：2006-06-15

申请号：US11302592

申请日：2005-12-12

申请人： Takeshi Wakabayashi ,  Ichiro Mihara

发明人： Takeshi Wakabayashi ,  Ichiro Mihara

IPC分类号： H01L21/50 ,  H01L23/04

CPC分类号： H01L23/5389 ,  H01L23/3114 ,  H01L23/3128 ,  H01L24/19 ,  H01L25/105 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05647 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01074 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19043 ,  H01L2924/00014

摘要： A semiconductor device includes a base plate made of a material including at least a thermosetting resin, and having an opening, a vertical conductor filled and provided in the opening of the base plate, at least one semiconductor construct having a semiconductor substrate and a plurality of external connection electrodes provided on one side of the semiconductor substrate, and an insulating layer secured to and provided on a periphery of the semiconductor construct. The insulating layer is secured to the base plate, and the external connection electrodes of the semiconductor construct are bonded to the vertical conductor.

摘要翻译： 半导体器件包括由至少包含热固性树脂的材料制成的基板，并且具有开口，填充并设置在基板的开口中的垂直导体，至少一个具有半导体基板和多个半导体基板的半导体构造 设置在半导体衬底的一侧上的外部连接电极以及固定到半导体结构的周边并设置在该半导体构造的周围的绝缘层。 绝缘层固定在基板上，半导体结构的外部连接电极与垂直导体结合。

公开(公告)号：US20110291212A1

公开(公告)日：2011-12-01

申请号：US13115348

申请日：2011-05-25

申请人： Ichiro Mihara ,  Takeshi Wakabayashi

发明人： Ichiro Mihara ,  Takeshi Wakabayashi

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14683 ,  H01L27/14618 ,  H01L27/14687 ,  H01L2224/13

摘要： A photosensor comprises a photoelectric conversion device region and a connection pad on the lower surface of a semiconductor substrate, and also comprises a wiring line connected to the connection pad via insulating film under the semiconductor substrate, and a columnar electrode as an external connection electrode connected to the wiring line. As a result, as compared with the case where the photoelectric conversion device region and the connection pad connected to the photoelectric conversion device region are formed on the upper surface of the semiconductor substrate, a piercing electrode for connecting the connection pad and the wiring line does not have to be formed in the semiconductor substrate. Thus, the number of steps can be smaller, and a fabrication process can be less restricted.

摘要翻译： 光电传感器包括在半导体衬底的下表面上的光电转换器件区域和连接焊盘，并且还包括通过半导体衬底下的绝缘膜连接到连接焊盘的布线和连接到外部连接电极的柱状电极 到接线。 结果，与在半导体衬底的上表面上形成光电转换元件区域和与光电转换元件区域连接的连接焊盘的情况相比，用于连接连接焊盘和布线的穿孔电极 不必在半导体衬底中形成。 因此，步数可以更小，并且制造过程可以较少受限制。

公开(公告)号：US08067274B2

公开(公告)日：2011-11-29

申请号：US12506503

申请日：2009-07-21

申请人： Ichiro Mihara ,  Takeshi Wakabayashi

发明人： Ichiro Mihara ,  Takeshi Wakabayashi

IPC分类号： H01L21/00

CPC分类号： H01L23/3128 ,  H01L21/4846 ,  H01L21/561 ,  H01L23/142 ,  H01L23/5389 ,  H01L24/05 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/73204 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2224/83

摘要： In this manufacturing method of a semiconductor device, a metal plate having a plurality of projection electrodes in each of a plurality of semiconductor device formation areas is prepared. Next, the projection electrodes of each of the semiconductor formation areas are aligned corresponding to external connection electrodes of each semiconductor construction, and each semiconductor construction is separately arranged on the projection electrodes in the semiconductor device formation areas. Next, an insulating layer formation sheet is arranged on the metal plate, and the metal plate and the insulating layer formation sheet are joined by heat pressing. Then, the metal plate is patterned and a plurality of upper layer wirings that connect to the projection electrodes is formed.

摘要翻译： 在这种半导体装置的制造方法中，准备在多个半导体装置形成区域中具有多个突起电极的金属板。 接下来，每个半导体形成区域的突起电极对应于每个半导体结构的外部连接电极对准，并且每个半导体构造分别布置在半导体器件形成区域中的突出电极上。 接着，在金属板上配置绝缘层形成片，通过热压接合金属板和绝缘层形成片。 然后，对金属板进行构图，形成与突起电极连接的多个上层布线。

公开(公告)号：US07719116B2

公开(公告)日：2010-05-18

申请号：US11443858

申请日：2006-05-31

申请人： Takeshi Wakabayashi ,  Ichiro Mihara

发明人： Takeshi Wakabayashi ,  Ichiro Mihara

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/3114 ,  H01L23/5286 ,  H01L24/10 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05569 ,  H01L2224/05647 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

摘要： A semiconductor device includes a semiconductor substrate having an integrated circuit, a first insulating film formed on the semiconductor substrate, at least one power source internal wiring line formed on the first insulating film, and a second insulating film formed on the first insulating film and on the internal wiring line and having a plurality of openings exposing parts of the internal wiring line. At least one wiring line is formed on an upper side of the second insulating film to correspond to the internal wiring line and electrically connected to the internal wiring line via the plurality of openings of the second insulating film. The wiring line has at least one external electrode pad portion whose number is smaller than the number of openings in the second insulating film.

摘要翻译： 半导体器件包括具有集成电路的半导体衬底，形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的至少一个电源内部布线和形成在第一绝缘膜上的第二绝缘膜， 内部布线并且具有暴露内部布线的部分的多个开口。 至少一条布线形成在第二绝缘膜的上侧，以对应于内部布线，并且经由第二绝缘膜的多个开口与内部布线相电连接。 布线具有数量小于第二绝缘膜中的开口数量的至少一个外部电极焊盘部分。

公开(公告)号：US07563640B2

公开(公告)日：2009-07-21

申请号：US11853683

申请日：2007-09-11

申请人： Shinji Wakisaka ,  Hiroyasu Jobetto ,  Takeshi Wakabayashi ,  Ichiro Mihara

发明人： Shinji Wakisaka ,  Hiroyasu Jobetto ,  Takeshi Wakabayashi ,  Ichiro Mihara

IPC分类号： H01L21/44

CPC分类号： H01L24/27 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4943 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3025 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/07025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A first semiconductor element is mounted on a base plate, and is in a sealed state by the periphery thereof being covered by an insulation member, and the upper surface thereof being covered by an upper insulation film. An upper wiring layer formed on the upper insulation film, and the lower wiring layer formed below the base plate via lower insulation films are connected by conductors. A second semiconductor element is mounted exposed, being connected to the lower wiring layer.

摘要翻译： 第一半导体元件安装在基板上，其周边处于密封状态，被绝缘构件覆盖，其上表面被上绝缘膜覆盖。 通过导体将形成在上绝缘膜上的上布线层和通过下绝缘膜形成在基板下方的下布线层连接。 第二半导体元件被暴露安装，连接到下布线层。

公开(公告)号：US20080191357A1

公开(公告)日：2008-08-14

申请号：US12009719

申请日：2008-01-22

申请人： Ichiro Kouno ,  Takeshi Wakabayashi ,  Ichiro Mihara

发明人： Ichiro Kouno ,  Takeshi Wakabayashi ,  Ichiro Mihara

IPC分类号： H01L23/48

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05083 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2924/00014

摘要： A semiconductor device includes a semiconductor substrate, a plurality of wiring lines which are provided on one side of the semiconductor substrate and which have connection pad portions, and a plurality of columnar electrodes respectively provided on the connection pad portions of the wiring lines, each of the columnar electrodes including an outer peripheral surface and a top surface. An electromigration prevention film is provided on at least the surfaces of the wiring lines. A sealing film is provided around the outer periphery surfaces of the columnar electrodes.

摘要翻译： 半导体器件包括半导体衬底，设置在半导体衬底的一侧上并具有连接焊盘部分的多个布线，以及分别设置在布线的连接焊盘部分上的多个柱状电极， 柱状电极包括外周面和顶面。 至少在布线的表面上设置有电迁移膜。 在柱状电极的外周面上设置密封膜。

公开(公告)号：US07247947B2

公开(公告)日：2007-07-24

申请号：US11524481

申请日：2006-09-20

申请人： Takeshi Wakabayashi ,  Ichiro Mihara

发明人： Takeshi Wakabayashi ,  Ichiro Mihara

IPC分类号： H01L23/12 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L2224/04105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/351 ,  H01L2924/00

摘要： A semiconductor device includes a first semiconductor construct provided on a base plate and having a semiconductor substrate and external connection electrodes. An insulating layer is provided on the base plate around the first semiconductor construct. An upper layer insulating film is provided on the first semiconductor construct and insulating layer. Upper layer wiring lines are provided on the upper layer insulating film so that the upper layer wiring line is electrically connected to the external connection electrode. A second semiconductor construct is joined to and installed on connection pad portions. All jointing portions of the second semiconductor construct for the connection pad portions of the upper layer wiring lines are disposed in a region corresponding to the first semiconductor construct.

摘要翻译： 半导体器件包括设置在基板上并具有半导体衬底和外部连接电极的第一半导体结构。 绝缘层设置在第一半导体结构周围的基板上。 在第一半导体结构和绝缘层上设置上层绝缘膜。 上层布线设置在上层绝缘膜上，使得上层布线与外部连接电极电连接。 第二半导体结构连接到并安装在连接焊盘部分上。 用于上层布线的连接焊盘部分的第二半导体结构的所有连接部分设置在与第一半导体结构对应的区域中。

公开(公告)号：US20070099409A1

公开(公告)日：2007-05-03

申请号：US11610327

申请日：2006-12-13

申请人： Ichiro Mihara ,  Takeshi Wakabayashi ,  Toshihiro Kido ,  Hiroyasu Jobetto ,  Yutaka Yoshino ,  Nobuyuki Kageyama ,  Daita Kohno ,  Jun Yoshizawa

发明人： Ichiro Mihara ,  Takeshi Wakabayashi ,  Toshihiro Kido ,  Hiroyasu Jobetto ,  Yutaka Yoshino ,  Nobuyuki Kageyama ,  Daita Kohno ,  Jun Yoshizawa

IPC分类号： H01L21/44

CPC分类号： H01L23/3128 ,  H01L21/56 ,  H01L23/16 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/18162 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00

摘要： A semiconductor device includes at least one semiconductor structure which has a plurality of external connection electrodes formed on a semiconductor substrate. An insulating sheet member is arranged on the side of the semiconductor structure. Upper interconnections have connection pad portions that are arranged on the insulating sheet member in correspondence with the upper interconnections and connected to the external connection electrodes of the semiconductor structure.

摘要翻译： 半导体器件包括至少一个半导体结构，其具有形成在半导体衬底上的多个外部连接电极。 在半导体结构的一侧设置有绝缘片部件。 上部互连具有连接焊盘部分，其布置在与上部互连件对应并且连接到半导体结构的外部连接电极的绝缘片部件上。

公开(公告)号：US20070042594A1

公开(公告)日：2007-02-22

申请号：US11588647

申请日：2006-10-27

申请人： Takeshi Wakabayashi ,  Ichiro Mihara

发明人： Takeshi Wakabayashi ,  Ichiro Mihara

IPC分类号： H01L21/44

CPC分类号： H01L21/6835 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/16225 ,  H01L2224/24195 ,  H01L2224/24226 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2224/83 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/07811 ,  H01L2924/14 ,  H01L2924/15173 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012

摘要： A method of manufacturing a semiconductor device includes providing a base plate; mounting a plurality of semiconductor chips each having a plurality of connection pads formed on an upper surface thereof to the base plate, the plural semiconductor chips being mounted apart from each other; forming an insulating film on an upper surface of the base plate including the upper surfaces of the semiconductor chips such that the insulating film has a flat surface; forming a plurality of pairs of re-wirings on the insulating film, each of the re-wirings being connected to a connection pad of any of the semiconductor chips and at least some of the re-wirings having pad portions arranged in a region of the insulating film formed on the periphery of the semiconductor chip connected to the connection pad; and cutting the insulating film between the adjacent semiconductor chips so as to obtain a plurality of semiconductor devices each comprising at least one semiconductor chip, the insulating film formed on the periphery of the semiconductor chip, and the re-wiring having a pad portion arranged in the region of the insulating film.

摘要翻译： 一种制造半导体器件的方法包括：提供基板; 将多个半导体芯片安装在其上表面上形成有多个连接焊盘的多个半导体芯片，所述多个半导体芯片彼此分离安装; 在包括半导体芯片的上表面的基板的上表面上形成绝缘膜，使得绝缘膜具有平坦表面; 在所述绝缘膜上形成多对重新布线，每个所述重新布线连接到任何所述半导体芯片的连接焊盘，并且至少一些所述重新布线具有布置在所述半导体芯片的区域中的焊盘部分 绝缘膜形成在连接到连接焊盘的半导体芯片的周边上; 以及切割相邻半导体芯片之间的绝缘膜，以便获得多个半导体器件，每个半导体器件包括至少一个半导体芯片，所述绝缘膜形成在半导体芯片的外围，并且所述重新布线具有布置在其中的焊盘部分 绝缘膜的区域。

公开(公告)号：US20050140021A1

公开(公告)日：2005-06-30

申请号：US10986532

申请日：2004-11-10

申请人： Shinji Wakisaka ,  Hiroyasu Jobetto ,  Takeshi Wakabayashi ,  Ichiro Mihara

发明人： Shinji Wakisaka ,  Hiroyasu Jobetto ,  Takeshi Wakabayashi ,  Ichiro Mihara

IPC分类号： H01L21/60 ,  H01L23/538 ,  H01L25/065 ,  H01L29/40

CPC分类号： H01L24/27 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4943 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3025 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/07025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A first semiconductor element is mounted on a base plate, and is in a sealed state by the periphery thereof being covered by an insulation member, and the upper surface thereof being covered by an upper insulation film. An upper wiring layer formed on the upper insulation film, and the lower wiring layer formed below the base plate via lower insulation films are connected by conductors. A second semiconductor element is mounted exposed, being connected to the lower wiring layer.

摘要翻译： 第一半导体元件安装在基板上，其周边处于密封状态，被绝缘构件覆盖，其上表面被上绝缘膜覆盖。 通过导体将形成在上绝缘膜上的上布线层和通过下绝缘膜形成在基板下方的下布线层连接。 第二半导体元件被暴露安装，连接到下布线层。