公开(公告)号：US08455905B2

公开(公告)日：2013-06-04

申请号：US13274759

申请日：2011-10-17

申请人： Masaki Fujikane ,  Akira Inoue ,  Toshiya Yokogawa

发明人： Masaki Fujikane ,  Akira Inoue ,  Toshiya Yokogawa

IPC分类号： H01L33/00

CPC分类号： H01L33/54 ,  H01L33/18 ,  H01L2933/0091

摘要： Provided is a light-emitting device including: a nitride semiconductor light-emitting element (402) which radiates optically polarized light; and a light emission control layer (404) which covers the light emission surface of the nitride semiconductor light-emitting element (402) and which contains a resin and non-fluorescent particles dispersed in the resin, in which the light emission control layer (404) contains the non-fluorescent particles at a proportion of 0.01 vol % or more and 10 vol % or less, and the non-fluorescent particles have a diameter of 30 nm or more and 150 nm or less.

摘要翻译： 本发明提供一种发光装置，其包括：辐射光学偏振光的氮化物半导体发光元件（402） 和覆盖所述氮化物半导体发光元件（402）的发光面的发光控制层（404），所述发光控制层包含分散在所述树脂中的树脂和非荧光粒子，所述发光控制层（404） ）含有0.01vol％以上且10vol％以下的非荧光性粒子，非荧光粒子的直径为30nm以上且150nm以下。

公开(公告)号：US20110297956A1

公开(公告)日：2011-12-08

申请号：US13201938

申请日：2009-10-21

申请人： Ryou Kato ,  Masaki Fujikane ,  Akira Inoue ,  Toshiya Yokogawa

发明人： Ryou Kato ,  Masaki Fujikane ,  Akira Inoue ,  Toshiya Yokogawa

IPC分类号： H01L33/02

CPC分类号： C23C16/303 ,  C30B25/02 ,  C30B29/403 ,  H01L33/007

摘要： The present invention is a method of manufacturing a gallium nitride-based compound semiconductor, including growing an m-plane InGaN layer whose emission peak wavelength is not less than 500 nm by metalorganic chemical vapor deposition. Firstly, step (A) of heating a substrate in a reactor is performed. Then, step (B) of supplying into the reactor a gas which contains an In source gas, a Ga source gas, and a N source gas and growing an m-plane InGaN layer of an InxGa1-xN crystal on the substrate at a growth temperature from 700° C. to 775° C. is performed. In step (B), the growth rate of the m-plane InGaN layer is set in a range from 4.5 nm/min to 10 nm/min.

摘要翻译： 本发明是一种制造氮化镓系化合物半导体的方法，包括通过金属有机化学气相沉积生长发光峰值波长不小于500nm的m面InGaN层。 首先，进行在反应器中加热基板的工序（A）。 然后，向反应器供给包含In源气体，Ga源气体和N源气体的气体的步骤（B），并在生长中在衬底上生长In x Ga 1-x N晶体的m面InGaN层 进行从700℃到775℃的温度。 在步骤（B）中，将m面InGaN层的生长速度设定在4.5nm / min〜10nm / min的范围内。

公开(公告)号：US08648350B2

公开(公告)日：2014-02-11

申请号：US13398925

申请日：2012-02-17

申请人： Ryou Kato ,  Masaki Fujikane ,  Akira Inoue ,  Toshiya Yokogawa

发明人： Ryou Kato ,  Masaki Fujikane ,  Akira Inoue ,  Toshiya Yokogawa

IPC分类号： H01L29/15

CPC分类号： H01L33/325 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/14 ,  H01L33/18

摘要： Provided is a gallium nitride-based compound semiconductor light-emitting element, in which the concentration of Mg which is a p-type dopant in a p-GaN layer in which the (10-10) m-plane of a hexagonal wurtzite structure grows is adjusted in a range from 1.0×1018 cm−3 to 9.0×1018 cm−3.

摘要翻译： 提供了一种氮化镓系化合物半导体发光元件，其中在六边形纤锌矿结构的（10-10）m面生长的p-GaN层中作为p型掺杂剂的Mg的浓度增长 在1.0×10 18 cm -3〜9.0×10 18 cm -3的范围内进行调整。

公开(公告)号：US08587022B2

公开(公告)日：2013-11-19

申请号：US13256061

申请日：2010-12-27

申请人： Akira Inoue ,  Junko Iwanaga ,  Ryou Kato ,  Masaki Fujikane ,  Toshiya Yokogawa

发明人： Akira Inoue ,  Junko Iwanaga ,  Ryou Kato ,  Masaki Fujikane ,  Toshiya Yokogawa

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/13 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A nitride-based semiconductor light-emitting device 31 includes: an n-type GaN substrate 1 which has an m-plane principal surface; a current diffusing layer 7 provided on the n-type GaN substrate 1; an n-type nitride semiconductor layer 2 provided on the current diffusing layer 7; an active layer 3 provided on the n-type nitride semiconductor layer 2; a p-type nitride semiconductor layer 4 provided on the active layer 3; a p-electrode 5 which is in contact with the p-type nitride semiconductor layer 4; and an n-electrode 6 which is in contact with the n-type GaN substrate 1 or the n-type nitride semiconductor layer 2. The donor impurity concentration of the n-type nitride semiconductor layer 2 is not more than 5×1018 cm−3, and the donor impurity concentration of the current diffusing layer 7 is ten or more times the donor impurity concentration of the n-type nitride semiconductor layer 2.

摘要翻译： 氮化物系半导体发光元件31具备：具有m面主面的n型GaN衬底1， 设置在n型GaN衬底1上的电流扩散层7; 设置在电流扩散层7上的n型氮化物半导体层2; 设置在n型氮化物半导体层2上的有源层3; 设置在有源层3上的p型氮化物半导体层4; 与p型氮化物半导体层4接触的p电极5; 以及与n型GaN衬底1或n型氮化物半导体层2接触的n电极6.n型氮化物半导体层2的施主杂质浓度不大于5×1018cm- 3，电流扩散层7的施主杂质浓度为n型氮化物半导体层2的施主杂质浓度的十倍以上。

公开(公告)号：US20110198568A1

公开(公告)日：2011-08-18

申请号：US13125367

申请日：2010-04-05

申请人： Akira Inoue ,  Masaki Fujikane ,  Toshiya Yokogawa

发明人： Akira Inoue ,  Masaki Fujikane ,  Toshiya Yokogawa

IPC分类号： H01L33/06 ,  H01L33/32

CPC分类号： H01L29/045 ,  H01L24/14 ,  H01L24/17 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05184 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01088 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/15787 ,  H01L2924/00 ,  H01L2924/00014

摘要： A light-emitting apparatus of the present invention includes: a mounting base 260 which has a wire 265; and a nitride-based semiconductor light-emitting device flip-chip mounted on the mounting base 260. The nitride-based semiconductor light-emitting device 100 includes a GaN-based substrate 10 which has an m-plane surface 12, a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN-based substrate 10, and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32. The Mg layer 32 is in contact with the surface of the p-type semiconductor region of the semiconductor multilayer structure 20. The electrode 30 is coupled to the wire 265.

摘要翻译： 本发明的发光装置包括：安装基座260，其具有线265; 以及安装在安装基座260上的氮化物系半导体发光装置倒装芯片。氮化物系半导体发光装置100具备：具有m面面12的GaN基基板10，半导体层叠结构体 设置在GaN基基板10的m面表面12上，以及设置在半导体多层结构20上的电极30.电极30包括Mg层32.Mg层32与 p型半导体区域。电极30与线265耦合。

公开(公告)号：US20110179993A1

公开(公告)日：2011-07-28

申请号：US12991764

申请日：2009-11-26

申请人： Akira Inoue ,  Ryou Kato ,  Masaki Fujikane ,  Toshiya Yokogawa

发明人： Akira Inoue ,  Ryou Kato ,  Masaki Fujikane ,  Toshiya Yokogawa

IPC分类号： C30B25/10 ,  C30B25/02 ,  C30B25/14 ,  C30B25/18

CPC分类号： C23C16/303 ,  C30B25/10 ,  C30B25/20 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L33/007

摘要： A nitride semiconductor layer formation method includes the steps of: (S1) placing a substrate in a reaction chamber, the substrate including an m-plane nitride semiconductor crystal at least in an upper surface; (S2) increasing a temperature of the substrate by heating the substrate placed in the reaction chamber; and (S3) growing a nitride semiconductor layer on the substrate. In the temperature increasing step (S2), a nitrogen source gas and a Group III element source gas are supplied into the reaction chamber, whereby an m-plane nitride semiconductor crystal having a smooth surface can be formed even if the thickness of the layer is 400 nm, and its growth time can be greatly decreased.

摘要翻译： 氮化物半导体层形成方法包括以下步骤：（S1）将基板放置在反应室中，所述基板至少在上表面包括m面氮化物半导体晶体; （S2）通过加热放置在反应室中的基板来增加基板的温度; 和（S3）在衬底上生长氮化物半导体层。 在升温工序（S2）中，将氮源气体和III族元素源气体供给到反应室中，由此即使层的厚度为厚度，也可以形成具有平滑表面的m面氮化物半导体晶体 400nm，其生长时间可大大降低。

公开(公告)号：US20130126902A1

公开(公告)日：2013-05-23

申请号：US13813792

申请日：2011-08-05

申请人： Akihiro Isozaki ,  Akira Inoue ,  Atsushi Yamada ,  Toshiya Yokogawa

发明人： Akihiro Isozaki ,  Akira Inoue ,  Atsushi Yamada ,  Toshiya Yokogawa

IPC分类号： H01L33/32

CPC分类号： H01L33/32 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/20 ,  H01L2933/0083

摘要： A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.

摘要翻译： 根据本发明的半导体发光元件包括：n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型氮化物半导体层和p型氮化物半导体层之间的有源层区域22; 与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50，其被设置用于发光面，并且具有大致平行于m面氮化物半导体层的a轴方向延伸的多个突起。

公开(公告)号：US09252330B2

公开(公告)日：2016-02-02

申请号：US13813792

申请日：2011-08-05

申请人： Akihiro Isozaki ,  Akira Inoue ,  Atsushi Yamada ,  Toshiya Yokogawa

发明人： Akihiro Isozaki ,  Akira Inoue ,  Atsushi Yamada ,  Toshiya Yokogawa

IPC分类号： H01L33/32 ,  H01L33/16 ,  H01L33/20 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/20 ,  H01L2933/0083

摘要： A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.

摘要翻译： 根据本发明的半导体发光元件包括：n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型氮化物半导体层和p型氮化物半导体层之间的有源层区域22; 与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50，其被设置用于发光面，并且具有大致平行于m面氮化物半导体层的a轴方向延伸的多个突起。

公开(公告)号：US20130126901A1

公开(公告)日：2013-05-23

申请号：US13813777

申请日：2011-08-05

申请人： Akihiro Isozaki ,  Akira Inoue ,  Atsushi Yamada ,  Toshiya Yokogawa

发明人： Akihiro Isozaki ,  Akira Inoue ,  Atsushi Yamada ,  Toshiya Yokogawa

IPC分类号： H01L33/32

CPC分类号： H01L33/32 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/20 ,  H01L2933/0083

摘要： A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m-plane nitride semiconductor layer and which is interposed between the n- and p-type nitride semiconductor layers; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run in a direction that defines either an angle of 5 degrees to 80 degrees or an angle of −80 degrees to −5 degrees with respect to the a-axis direction of the m-plane nitride semiconductor layer.

摘要翻译： 根据本发明的半导体发光元件包括：n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型和p型氮化物半导体层之间的有源层区22。 与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50，其被设置用于发光面，并且具有多个突起，该多个突起在限定5度至80度的角度或-80度至-5度的角度的方向上延伸，相对于 相对于m面氮化物半导体层的a轴方向。

公开(公告)号：US08933543B2

公开(公告)日：2015-01-13

申请号：US13503972

申请日：2011-03-15

申请人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Akihiro Isozaki

发明人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Akihiro Isozaki

IPC分类号： H01L33/16 ,  H01L21/02 ,  H01L33/40 ,  H01L23/532 ,  H01L33/00 ,  H01L33/32 ,  H01S5/042 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01L21/02579 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L23/53247 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40 ,  H01L2224/13 ,  H01L2924/12032 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/3202 ,  H01S5/32341 ,  H01L2924/00

摘要： A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5°; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x≧0, y≧0, and z≧0) layer 26. The electrode 30 includes a Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 本发明的氮化物系半导体器件包括：氮化物系半导体多层结构体20，其具有p型半导体区域，表面12从m面倾斜不小于1°的角度， 超过5°; 以及设置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z≥0）层26形成。电极30包括Mg层32和Ag层34 设置在Mg层32上.Mg层32与半导体多层结构体20的p型半导体区域的表面12接触。