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128 条记录 (耗时 0.092 秒)

    PLASMA PROCESSING METHOD, APPARATUS AND STORAGE MEDIUM
    16.
    发明申请
    PLASMA PROCESSING METHOD, APPARATUS AND STORAGE MEDIUM 审中-公开
    等离子体处理方法，装置和存储介质

    公开(公告)号：US20070163995A1

    公开(公告)日：2007-07-19

    申请号：US11567384

    申请日：2006-12-06

    申请人： Masaru SUGIMOTO ,  Noriyuki Kobayashi ,  Masaharu Sugiyama

    发明人： Masaru SUGIMOTO ,  Noriyuki Kobayashi ,  Masaharu Sugiyama

    IPC分类号： C23F1/00 ,  B44C1/22 ,  H01L21/302 ,  H01L21/306

    CPC分类号： H01L21/31144 ,  H01J37/32082 ,  H01J2237/3347 ,  H01L21/31116 ,  H01L21/76816

    摘要： In etching an insulating film such as an SiOC film or the like, in order to suppress a diameter of a hole or a width of a groove, a pre-processing is performed before performing the etching. In the pre-processing, a processing gas containing CF4 gas and CH3F gas is converted into a plasma, and an opening size of an opening portion of a resist mask is decreased by depositing deposits at a sidewall thereof by using the plasma. Further, in etching the SiOC film, a processing gas containing CF4 gas, CH3F gas, and N2 gas is converted into a plasma by supplying a processing gas atmosphere by using a first high frequency wave for generating the plasma, wherein the electric power divided by a surface area of a substrate becomes over 1500 W/70685.8 mm2 (a surface area of a 300 mm wafer), and then the SiOC film is etched.

    摘要翻译： 在蚀刻诸如SiOC膜等的绝缘膜时，为了抑制孔的直径或槽的宽度，在进行蚀刻之前进行预处理。 在预处理中，含有CF 4气体和CH 3 F气体的处理气体被转换为等离子体，并且抗蚀剂掩模的开口部分的开口尺寸 通过使用等离子体在其侧壁沉积沉积物而降低。 此外，在蚀刻SiOC膜时，将含有CF 4气体，CH 3 F气体和N 2气体的处理气体转化为 通过使用用于产生等离子体的第一高频波提供处理气体气氛的等离子体，其中被基板的表面积分割的电力超过1500W / 70685.8mm 2（表面积 的300mm晶片），然后蚀刻SiOC膜。

    Lens drive device, camera module, and camera mounting device
    17.
    发明授权
    Lens drive device, camera module, and camera mounting device 有权

    公开(公告)号：US10551589B2

    公开(公告)日：2020-02-04

    申请号：US15551765

    申请日：2016-02-17

    申请人： Toshihiko Honma ,  Noriyuki Kobayashi

    发明人： Toshihiko Honma ,  Noriyuki Kobayashi

    IPC分类号： G02B7/10 ,  G02B7/08 ,  G02B7/02 ,  G02B7/04 ,  G02B7/09 ,  G03B3/10 ,  H02K41/035

    摘要： Using drive force from a voice coil motor constituted of an autofocus coil unit and an autofocus magnet unit, a lens drive device automatically carries out focusing by moving an autofocus movable unit, which includes the autofocus coil unit, with respect to an autofocus fixed unit, which includes the autofocus magnet unit, in the direction of an optical axis. The autofocus movable unit has a lens holder that holds the autofocus coil unit. The lens holder has a cut-out part recessed on the inside in the radial direction from the outer periphery of the holder, and a binding part that protrudes to the outside in the radial direction from the cut-out part and binds an end part of the autofocus coil unit. The tip of the binding part is positioned to the inside of the outer periphery of the holder in the radial direction.

    Plasma etching method and storage medium
    18.
    发明授权
    Plasma etching method and storage medium 有权
    等离子体蚀刻方法和存储介质

    公开(公告)号：US09130018B2

    公开(公告)日：2015-09-08

    申请号：US13584327

    申请日：2012-08-13

    申请人： Naotsugu Hoshi ,  Noriyuki Kobayashi

    发明人： Naotsugu Hoshi ,  Noriyuki Kobayashi

    IPC分类号： H01L21/306 ,  C23F1/00 ,  H01L21/768 ,  H01J37/32 ,  H01L21/311

    CPC分类号： H01L21/76813 ,  H01J37/32091 ,  H01J37/32926 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76807 ,  H01L21/76814

    摘要： A plasma etching method that can increase the selection ratio of a stop layer to an interlayer insulation film. The plasma etching method is carried out on a substrate that has the interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a stop layer that stops etching and is exposed at the bottom of a hole or a trench formed in the interlayer insulation film. The interlayer insulation film and the stop layer are exposed at the same time to plasma generated from CyFz (y and z are predetermined natural numbers) gas and hydrogen-containing gas.

    摘要翻译： 能够提高阻挡层与层间绝缘膜的选择比的等离子体蚀刻方法。 等离子体蚀刻方法是在具有由CwFx（x和w是预定的自然数）形成的层间绝缘膜的基板上进行的，停止层停止蚀刻并露出在形成于其中的孔或沟槽的底部 层间绝缘膜。 层间绝缘膜和停止层同时暴露于由CyFz（y和z是预定的自然数）产生的等离子体气体和含氢气体。