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公开(公告)号:US20060084216A1
公开(公告)日:2006-04-20
申请号:US11292428
申请日:2005-12-01
申请人: Stephen Cea , Ravindra Soman , Ramune Nagisetty , Sunit Tyagi , Sanjay Natarajan
发明人: Stephen Cea , Ravindra Soman , Ramune Nagisetty , Sunit Tyagi , Sanjay Natarajan
IPC分类号: H01L21/8234
CPC分类号: H01L29/66636 , H01L29/1054 , H01L29/7842
摘要: Various methods for forming a layer of strained silicon in a channel region of a device and devices constructed according to the disclosed methods. In one embodiment, a strain-inducing layer is formed, a relaxed layer is formed on the strain-inducing layer, a portion of the strain-inducing layer is removed, which allows the strain-inducing layer to relax and strain the relaxed layer.
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公开(公告)号:US07019326B2
公开(公告)日:2006-03-28
申请号:US10714139
申请日:2003-11-14
IPC分类号: H01L29/06
CPC分类号: H01L29/66636 , H01L29/1054 , H01L29/7842
摘要: Various methods for forming a layer of strained silicon in a channel region of a device and devices constructed according to the disclosed methods. In one embodiment, a strain-inducing layer is formed, a relaxed layer is formed on the strain-inducing layer, a portion of the strain-inducing layer is removed, which allows the strain-inducing layer to relax and strain the relaxed layer.
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公开(公告)号:US07473591B2
公开(公告)日:2009-01-06
申请号:US11292428
申请日:2005-12-01
IPC分类号: H01L21/00
CPC分类号: H01L29/66636 , H01L29/1054 , H01L29/7842
摘要: Various methods for forming a layer of strained silicon in a channel region of a device and devices constructed according to the disclosed methods. In one embodiment, a strain-inducing layer is formed, a relaxed layer is formed on the strain-inducing layer, a portion of the strain-inducing layer is removed, which allows the strain-inducing layer to relax and strain the relaxed layer.
摘要翻译: 用于在器件的沟道区域中形成应变硅层的各种方法以及根据所公开的方法构造的器件。 在一个实施例中,形成应变诱导层,在应变诱导层上形成松弛层,去除应变诱导层的一部分,这使得应变诱导层松弛并使应变放松层。
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