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18 条记录 (耗时 0.032 秒)

    Substrate support shield in wafer processing reactors
    11.
    发明授权
    Substrate support shield in wafer processing reactors 失效
    晶圆处理反应器中的基板支撑屏蔽

    公开(公告)号：US5855687A

    公开(公告)日：1999-01-05

    申请号：US326506

    申请日：1994-10-20

    申请人： Dale R. DuBois ,  Alan F. Morrison ,  Richard A. Marsh ,  Mei Chang

    发明人： Dale R. DuBois ,  Alan F. Morrison ,  Richard A. Marsh ,  Mei Chang

    IPC分类号： C23C16/44 ,  C23C16/04 ,  C23C16/455 ,  C23C16/458 ,  H01L21/205 ,  H01L21/285 ,  H01L21/683 ,  H01L21/687 ,  C23C16/00 ,  C23C14/00 ,  C23F1/00 ,  H01L21/00

    CPC分类号： C23C16/45521 ,  C23C16/04 ,  C23C16/042 ,  C23C16/4585 ,  H01L21/68735

    摘要： Apparatus for CVD processing wherein a wafer mounted on a vertically movable susceptor beneath a showerhead. The susceptor extends beyond the outer perimeter of the wafer such that, when the susceptor is raised into contact with a shield ring which normally rests on a ring support in the chamber, the shield ring engages outer portion of the susceptor beyond the perimeter of the wafer, lifting the shield ring off its support. The shield ring shields the edge of the top surface of the susceptor during the deposition, whereby unwanted deposition on the susceptor is prevented while, at the same time, allowing for deposition over the entire upper surface of the wafer. To center the shield ring and the susceptor with respect to each other, the shield ring may include a plurality of centering protrusions, at least some of which engage the susceptor as it moves upwards to lift the shield ring off its supports in the chamber.

    摘要翻译： 用于CVD处理的装置，其中安装在淋浴喷头下方的垂直移动的基座上的晶片。 感受体延伸超过晶片的外周边，使得当基座升高成与通常位于室中的环支撑件上的屏蔽环接触时，屏蔽环接合基座的外部部分超过晶片的周边 将护盾环从支架上取下。 屏蔽环在沉积期间屏蔽基座的顶表面的边缘，由此防止基座上的不希望的沉积，同时允许沉积在晶片的整个上表面上。 为了将屏蔽环和基座相对于彼此定位，屏蔽环可以包括多个定心突起，当其向上移动以将屏蔽环从腔室中的支撑件提升时，至少一些定心突起接合基座。

    Welded susceptor assembly
    12.
    发明授权
    Welded susceptor assembly 失效
    焊接基座组件

    公开(公告)号：US5522937A

    公开(公告)日：1996-06-04

    申请号：US237084

    申请日：1994-05-03

    申请人： Sandy M. Chew ,  Dale R. DuBois ,  Ronald L. Rose ,  Manus Wong

    发明人： Sandy M. Chew ,  Dale R. DuBois ,  Ronald L. Rose ,  Manus Wong

    IPC分类号： C23C16/44 ,  C23C16/458 ,  C23C16/50 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/687 ,  C23C16/00

    CPC分类号： H01L21/68764 ,  C23C16/458 ,  H01L21/68707 ,  H01L21/68785 ,  H01L21/68792

    摘要： A susceptor support arm assembly in a substrate processing chamber includes a secure ground connection between the susceptor and ground. An aluminum wire rope is welded to a winged terminal lug which is tightly inserted into a hole in a susceptor hub. The wings of the lug are then welded to the hub. The wire rope, now permanently attached to the susceptor hub, is routed through an opening in the susceptor end of a ceramic susceptor support arm, able to pass the ground end lug of the wire rope, through a channel in the support arm back to the susceptor arm support device, and to ground. The channel in the susceptor arm has grooves in its sides to receive a paddle shaped ceramic cover to enclose the channel and the bottom of the hub end of the susceptor arm. The cover insulates, isolates, and shields the grounding wire and thermocouple leads being routed from the susceptor hub back to the support end of the susceptor arm from exposure to the high intensity radiant energy directed at the back of the susceptor. Conical spring washers and shoulder screws, attach the metallic pieces (e.g. the susceptor hub) to the ceramic susceptor hub arm allowing for the differential thermal expansion between pieces without overstressing the ceramic material clamped. Surface treatment of the metallic pieces enhances their corrosion resistance.

    摘要翻译： 衬底处理室中的感受器支撑臂组件包括在基座和地面之间的牢固接地连接。 铝丝绳焊接到紧密插入基座毂孔中的翼形端子凸耳上。 接头的翼部然后焊接到轮毂。 现在永久地连接到基座轮毂上的钢丝绳穿过陶瓷基座支撑臂的基座端部的开口，该开口能够使钢丝索的接地端部凸起通过支撑臂中的通道回到 感受器臂支撑装置，并接地。 基座臂中的通道在其侧面具有凹槽，以容纳桨形陶瓷盖以封闭通道和基座臂的毂端的底部。 盖子将接地线和热电偶引线绝缘，隔离和屏蔽，从接受器轮毂回到基座臂的支撑端，暴露于指向基座背面的高强度辐射能。 圆锥形弹簧垫圈和肩螺钉，将金属片（例如，基座毂）连接到陶瓷基座轮毂臂上，允许片之间的不同热膨胀，而不会对夹持的陶瓷材料施加过大的应力。 金属片的表面处理提高了其耐腐蚀性。

    PROCESSING CHAMBER WITH HEATED CHAMBER LINER
    14.
    发明申请
    PROCESSING CHAMBER WITH HEATED CHAMBER LINER 有权
    加热室加热室内衬

    公开(公告)号：US20080178797A1

    公开(公告)日：2008-07-31

    申请号：US11668947

    申请日：2007-01-30

    申请人： MARK A. FODOR ,  Sophia M. Velastegui ,  Bok Hoen Kim ,  Dale R. DuBois

    发明人： MARK A. FODOR ,  Sophia M. Velastegui ,  Bok Hoen Kim ,  Dale R. DuBois

    IPC分类号： B05C11/00

    CPC分类号： C23C16/46

    摘要： A heater liner assembly suitable for covering the interior of a plasma processing chamber is provided. In some embodiments, a liner assembly for a processing chamber can include a heating element embedded in a body. A flange extending outward from an outer diameter of the body includes an upper surface having a sealing surface and at least one pad that extends from the upper surface of the flange to an elevation beyond the sealing surface. The pad contributes to control of the temperature of the liner assembly by maintaining the liner assembly spaced apart from the processing chamber.

    摘要翻译： 提供一种适用于覆盖等离子体处理室内部的加热器衬套组件。 在一些实施例中，用于处理室的衬套组件可以包括嵌入在主体中的加热元件。 从主体的外径向外延伸的凸缘包括具有密封表面的上表面和从凸缘的上表面延伸到超过密封表面的高度的至少一个垫。 衬垫有助于通过保持衬套组件与处理室间隔开来控制衬套组件的温度。

    Lift fingers for substrate processing apparatus
    15.
    发明授权
    Lift fingers for substrate processing apparatus 失效
    抬起手指进行基板处理装置

    公开(公告)号：US5332443A

    公开(公告)日：1994-07-26

    申请号：US73958

    申请日：1993-06-09

    申请人： Sandy M.-S. Chew ,  Shane D. Clark ,  Ron L. Rose ,  Dale R. DuBois ,  Cissy Leung ,  Alan F. Morrison ,  Manus K. Wong

    发明人： Sandy M.-S. Chew ,  Shane D. Clark ,  Ron L. Rose ,  Dale R. DuBois ,  Cissy Leung ,  Alan F. Morrison ,  Manus K. Wong

    IPC分类号： C23C16/458 ,  H01L21/00 ,  H01L21/673 ,  H01L21/687 ,  C23C16/00

    CPC分类号： H01L21/68742 ,  C23C16/4583 ,  H01L21/67103 ,  H01L21/68785

    摘要： A substrate lifting apparatus for use in a substrate processing apparatus which includes a thermal reactor having a substrate processing chamber and a substrate support located in the chamber. The lifting apparatus consists of a generally circular shaped support with four seats formed therein; four substrate lifting elements, each having a substrate engaging end and a securing tab sized to be received in a seat; a fastener, associated with each lifting element, which secures the tab into the seat; and an adjuster, associated with each lifting element, located between the tab and the seat. When the tab is secured in the seat and the adjuster is operated, the lifting element is caused to move in a plane parallel to a plane formed through the center of the fastener and the adjuster.

    摘要翻译： 一种用于基板处理装置的基板提升装置，其包括具有基板处理室和位于所述室中的基板支撑件的热反应器。 提升装置由大致圆形的支撑件组成，其中形成有四个座; 四个基板提升元件，每个基板提升元件各自具有基板接合端和尺寸设置成容纳在座中的固定片; 与每个提升元件相关联的紧固件，其将突片固定到座中; 以及与每个提升元件相关联的调节器，位于突片和座之间。 当突片固定在座椅中并且调节器被操作时，提升元件在平行于通过紧固件和调节器的中心形成的平面的平面中移动。

    Chemical vapor deposition wafer boat
    16.
    发明授权
    Chemical vapor deposition wafer boat 失效

    公开(公告)号：US4694778A

    公开(公告)日：1987-09-22

    申请号：US828625

    申请日：1986-02-10

    申请人： Arthur J. Learn ,  Dale R. DuBois

    发明人： Arthur J. Learn ,  Dale R. DuBois

    IPC分类号： C23C16/44 ,  C23C16/455 ,  B05C13/02

    CPC分类号： C23C16/45559 ,  C23C16/455 ,  C23C16/45591

    摘要： A chemical vapor deposition wafer boat for supporting a plurality of wafers in an evenly spaced, upright orientation perpendicular to the axis of the boat comprises a cylinder having closed ends and comprised of mutually engaging upper and lower hemicylinders. The upper hemicylinder has diffusion zones with gas flow passageways therein in the ends and zones within from 0 to 75 and within from 0 to 15 degrees from a vertical plane through the cylinder axis. The remainder of the hemicylinder wall and the ends are baffle areas without gas flow passageways. The ends and sidewall of the lower hemicylinder comprise gas diffusion zones. The gas flow passageways comprise from 0.5 to 80 percent of the surface area of the respective gas diffusion zones.

    Chemical vapor deposition apparatus
    18.
    发明授权
    Chemical vapor deposition apparatus 失效
    化学气相沉积装置

    公开(公告)号：US4539933A

    公开(公告)日：1985-09-10

    申请号：US528193

    申请日：1983-08-31

    申请人： Bryant A. Campbell ,  Dale R. DuBois ,  Ralph F. Manriquez ,  Nicholas E. Miller

    发明人： Bryant A. Campbell ,  Dale R. DuBois ,  Ralph F. Manriquez ,  Nicholas E. Miller

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/48 ,  H01L21/205 ,  H01L21/285 ,  C23C13/08

    CPC分类号： C23C16/481 ,  Y10S505/819 ,  Y10S505/826

    摘要： An improved chemical vapor deposition device having heating means substantially surrounding an inner deposition chamber for providing isothermal or precisely controlled gradient temperature conditions therein. The internal components of the chamber are quartz or similar radiant energy transparent material. Also included are special cooling means to protect thermally sensitive seals, structural configurations strengthening areas of glass components subjected to severe stress during operation, and specific designs permitting easy removal and replacement of all glass components exposed to deposition gas.

    摘要翻译： 一种改进的化学气相沉积装置，其具有基本上围绕内部沉积室的加热装置，用于在其中提供等温或精确控制的梯度温度条件。 室的内部部件是石英或类似的辐射能透明材料。 还包括用于保护热敏密封件的特殊冷却装置，在操作期间受到严重应力的玻璃部件的结构构造加强，以及允许容易地移除和更换暴露于沉积气体的所有玻璃部件的特定设计。