摘要:
A resist composition comprising an exo-form 2-alkylbicyclo[2.2.1]heptan-2-yl ester compound as a dissolution regulator has a high sensitivity, resolution, etching resistance and storage stability and lends itself to micropatterning with electron beams or deep-UV rays.
摘要:
Ester compounds of formula (1) are useful as monomers to form base resins for use in chemically amplified resist compositions adapted for micropatterning lithography. R1 is H or C1-6 alkyl, R2 is an acid labile group, k is 0 or 1, and m is an integer from 0 to 5.
摘要:
A novel ester compound having an alkylcycloalkyl or alkylcycloalkenyl group as the protective group is provided as well as a polymer comprising units of the ester compound. The polymer is used as a base resin to formulate a resist composition having a higher sensitivity, resolution and etching resistance than conventional resist compositions.
摘要:
Carboxyl-containing lactone compounds having formula (1) are novel wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are H or monovalent hydrocarbon groups, or R2 and R3 may together form an aliphatic ring, W is CH2, O or S, k1 is an integer of 0 to 4, and k2 is 0 or 1. They are useful as monomers to produce polymers which are transparent to radiation ≦500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent properties including resolution, LER, pattern density dependency and exposure margin.
摘要:
The present invention provides ester group-containing tertiary amine compounds of the formula (R1OCH2CH2)nN(CH2CH2CO2R2)3-n which, when used as additives in chemical amplification photolithography, can yield photoresists having a high resolution and an excellent focus margin. The present invention also provides a process comprising the step of subjecting a primary or secondary amine compound to Michael addition to an acrylic ester compound; a process comprising the steps of subjecting monoethanolamine or diethanolamine to Michael addition to an acrylic ester compound so as to form an ester group-containing amine compound and introducing a R1 group to the resultant ester group-containing amine compound; and a process comprising the step of effecting the ester exchange reaction of an ester group-containing tertiary amine with R2OH.
摘要翻译:本发明提供了式(R 1)2 OCH 2 CH 2 N酯的含酯基的叔胺化合物 > N(CH 2 CH 2)2 CO 2 N 2 - (CH 2)3 - n - 当用作化学放大光刻中的添加剂时,可以产生具有高分辨率和优异聚焦余量的光致抗蚀剂。 本发明还提供了一种方法,其包括使伯胺或仲胺化合物与丙烯酸酯化合物进行迈克尔加成步骤; 一种方法包括以下步骤:将一乙醇胺或二乙醇胺加入到丙烯酸酯化合物中以形成含酯基的胺化合物并将R 1 O 2基团引入所得的含酯基胺 复合; 以及包括使含酯基的叔胺与R 2 OH进行酯交换反应的步骤的方法。
摘要:
The present invention provides ester group-containing tertiary amine compounds of the formula (R1OCH2CH2)nN(CH2CH2CO2R2)3-n which, when used as additives in chemical amplification photolithography, can yield photoresists having a high resolution and an excellent focus margin. The present invention also provides a process comprising the step of subjecting a primary or secondary amine compound to Michael addition to an acrylic ester compound; a process comprising the steps of subjecting monoethanolamine or diethanolamine to Michael addition to an acrylic ester compound so as to form an ester group-containing amine compound and introducing a R1 group to the resultant ester group-containing amine compound; and a process comprising the step of effecting the ester exchange reaction of an ester group-containing tertiary amine with R2OH.
摘要翻译:本发明提供了式(R 1)2 OCH 2 CH 2 N酯的含酯基的叔胺化合物 > N(CH 2 CH 2)2 CO 2 N 2 - (CH 2)3 - n - 当用作化学放大光刻中的添加剂时,可以产生具有高分辨率和优异聚焦余量的光致抗蚀剂。 本发明还提供了一种方法,其包括使伯胺或仲胺化合物与丙烯酸酯化合物进行迈克尔加成步骤; 一种方法包括以下步骤:将一乙醇胺或二乙醇胺加入到丙烯酸酯化合物中以形成含酯基的胺化合物并将R 1 O 2基团引入所得的含酯基胺 复合; 以及包括使含酯基的叔胺与R 2 OH进行酯交换反应的步骤的方法。
摘要:
Chemically amplified resist compositions comprising nitrogen-containing organic compounds having an aromatic carboxylic acid ester structure have an excellent resolution and provide a precise pattern profile and are useful in microfabrication using electron beams or deep-UV light.
摘要:
A resist composition contains as a base resin a polymer represented by the following formula and having a Mw of 1,000-500,000. R1 is H, methyl or CO2R2, R2 is alkyl, R3 is H, methyl or CH2CO2R2, at least one of R4 to R7 is a carboxyl or hydroxyl-containing monovalent hydrocarbon group, and the reminders are independently H or alkyl, at least one of R8 to R11 is a monovalent hydrocarbon group of 2 to 15 carbon atoms containing a —CO2— partial structure, and the reminders are independently H or alkyl, R12 is a polycyclic hydrocarbon group or an alkyl group containing such a polycyclic hydrocarbon group, R13 is an acid labile group, Z is a divalent group of atoms to construct a 5- or 6-membered ring which contains a carboxylate, carbonate or acid anhydride therein, k is 0 or 1, x is a number from more than 0 to 1, “a” to “d” are from 0 to less than 1, x+a+b+c+d=1. The resist composition has significantly improved resolution, substrate adhesiveness, and etching resistance and is very useful in precise microfabrication.
摘要翻译:抗蚀剂组合物包含作为基础树脂的由下式表示的聚合物,其Mw为1,000-500,000.R 1是H,甲基或CO 2 R 2,R 2是烷基,R 3是 H,甲基或CH 2 CO 2 R 2,R 4至R 7中的至少一个是含羧基或羟基的一价烃基,并且提醒独立地为H或烷基,R 8, R 11是含有-CO 2 - 部分结构的2至15个碳原子的一价烃基,并且提醒独立地是H或烷基,R 12是多环烃基或含有这种多环的烷基 烃基,R 13是酸不稳定基团,Z是构成其中含有羧酸酯,碳酸酯或酸酐的5-或6-元环的二价原子基团,k是0或1,x是 数字从0到1,“a”到“d”从0到小于1,x + a + b + c + d = 1。 抗蚀剂组合物具有显着提高的分辨率,基底粘附性和耐蚀刻性,并且在精确微细加工中非常有用。
摘要:
An ester compound of formula (1) is provided. R1 is H or methyl, R2 is tertiary C4-20 alkyl, and k=0 or 1. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance and substrate adhesion, and is suited for micropatterning using electron beams or deep-UV.
摘要:
A polymer comprising units of formulas (1) and (2) and having a Mw of 1,000-500,000 is provided. R1 is H, CH3 or CH2CO2R3, R2 is H, CH3 or CO2R3, R3 is alkyl, R4 is H, alkyl, alkoxyalkyl or acyl, R5 is alkyl or aryl, Y is a divalent hydrocarbon group which may contain a hetero atom and which forms a ring with the carbon atom, Z is a trivalent hydrocarbon group, k is 0 or 1, and W is —O— or —(NR)— wherein R is H or alkyl. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV rays.