公开(公告)号：US20160225991A1

公开(公告)日：2016-08-04

申请号：US15024796

申请日：2014-09-29

Applicant: BASF SE ,  MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V.

Inventor： Matthias Georg Schwab ,  Klaus Müllen ,  Hermann Sachdev ,  Yoshikazu Ito

IPC: H01L51/00 ,  C23C16/30

CPC classification number: H01L51/0002 ,  C01B32/186 ,  C23C16/26 ,  C23C16/30 ,  H01L51/002 ,  H01L51/003 ,  H01L51/0045 ,  H01L51/0558 ,  H01L51/42 ,  H01L51/50

Abstract: The present invention relates to the use of an amine precursor of formula I (X1—R1)n—NH(3-n) (I) or its ammonium salts for depositing a graphene film having a nitrogen content of from 0 to 65% by weight on a substrate S1 by chemical vapor deposition (CVD), wherein R1 is selected from (a) C1 to C10 alkanediyl, which may all optionally be interrupted by at least one of O, NH and NR2, (b) alkenediyl, which may all optionally be interrupted by at least one of O, NH and NR2, (c) alkynediyl, which may all optionally be interrupted by at least one of O, NH and NR2, (d) C6 to C20 aromatic divalent moiety, and (e) CO and CH2CO, X1 is selected from H, OH, OR2, NH2, NHR2, or NR22, wherein two groups X1 may together form a bivalent group X2 being selected from a chemical bond, O, NH, or NR2, R2 is selected from C1 to C10 alkyl and a C6 to C20 aromatic moiety which may optionally be substituted by one or more substituents X1, n is 1, 2, or 3.

Abstract translation: 本发明涉及式I（X 1 -R 1）n -NH（3-n）（I）的胺前体或其铵盐用于沉积氮含量为0至65％的石墨烯膜的用途， 通过化学气相沉积（CVD）在衬底S1上的重量，其中R1选自（a）C1至C10烷二基，其可全部任选地被O，NH和NR2中的至少一个中断，（b）烯二基，其可以 全部可选地被O，NH和NR2中的至少一个中断，（c）炔二基，其全部可选地被O，NH和NR2，（d）C6〜C20芳族二价部分中的至少一个中断，（e ）CO和CH 2 CO，X 1选自H，OH，OR 2，NH 2，NHR 2或NR 22，其中两个基团X 1可以一起形成选自化学键，O，NH或NR 2的二价基团， 可以由C1至C10烷基和可任选被一个或多个取代基X1取代的C 6至C 20芳族部分，n为1,2或3。