公开(公告)号：US20230276653A1

公开(公告)日：2023-08-31

申请号：US18312313

申请日：2023-05-04

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Gang YU ,  Zhuo CHEN

IPC: H10K50/828 ,  H10K50/16 ,  H10K71/60

CPC classification number: H10K50/828 ,  H10K50/16 ,  H10K71/60 ,  H10K2101/30

Abstract: A light emitting diode and a display device including the light emitting diode. The light emitting diode includes a first electrode, a quantum dot light emitting layer, a carrier transport layer and a second electrode, in which the light emitting diode further includes a metal transition layer located between the carrier transport layer and the second electrode, and the second electrode includes a transparent conductive oxide material.

公开(公告)号：US20210320272A1

公开(公告)日：2021-10-14

申请号：US17271619

申请日：2020-05-20

Applicant: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Gang YU

IPC: H01L51/50 ,  H01L51/56 ,  H01L51/00

Abstract: A light-emitting diode device and a manufacturing method therefor, and a display panel and a display apparatus. The light-emitting diode device comprises a quantum dot light-emitting layer, and a hole transport layer located at one side of the quantum dot light-emitting layer, wherein the hole transport layer comprises a perovskite material and an organic hole transport material. The high carrier mobility of a perovskite material can improve the carrier transport performance of a hole transport layer.

公开(公告)号：US20200075877A1

公开(公告)日：2020-03-05

申请号：US16608077

申请日：2019-04-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Gang YU

IPC: H01L51/50

Abstract: A quantum dot light emitting diode includes: a light emitting layer, the light emitting layer including a first quantum dot layer and a second quantum dot layer which are stacked; the first quantum dot layer including a first quantum dot having a hole transporting property; and the second quantum dot layer including a second quantum dot having an electron transporting property. The first quantum dot layer having hole transporting property and the second quantum dot layer having electron transporting property are stacked. The first quantum dot layer and the second quantum dot layer not only form a quantum dot light emitting layer, but also transport holes and electrons respectively, thereby causing excitons to be recombined in the first quantum dot layer and/or the second quantum dot layer, or near the interface of the first quantum dot layer and the second quantum dot layer.