摘要:
A method and a system for determining a setting parameter of a hydrostatic displacement unit is provided. In the method, a pressure value, a rotational speed value, and a torque value are determined. The setting parameter can be determined with use of the pressure value, rotational speed value, torque value of the setting parameter characteristic diagram, and a setting parameter characteristic diagram, which is an inverted efficiency characteristic diagram, which has at least pressure, rotational speed, and torque as input parameters. The system can include a system unit for determining a pressure value, a system unit for determining a rotational speed value, a system unit for determining a torque value, and a system unit for determining the setting parameter with use of the pressure value, rotational speed value, torque value, and a characteristic diagram, whereby the system for determining a setting parameter is formed so that during the determination of the setting parameter it can use as a characteristic diagram a setting parameter characteristic diagram, which is an inverted efficiency characteristic diagram or torque characteristic diagram, which has at least pressure, rotational speed, and torque as input parameters.
摘要:
The high-purity alkaline earth halide crystals, especially CaF2, BaF2 or MgF2 crystals, have a diffuse scatter distribution function value of less than 7×10−7, an RMS uniformity of refractive index of less than 15×10−8 after subtraction of Zernike coefficients and an RMS value of birefringence in the (111) direction of less than 0.2 nm/cm. Preferably the crystals exhibit a loss coefficient of less than 5×10−4 cm−1 after irradiation with 10×109 laser pulses with an energy density of 10 mJ/cm2 at a wavelength of 193 nm. Also they have RMS birefringence in the (100) direction or the (111) direction that is less than 0.35 nm/cm.
摘要翻译:高纯度碱土卤化物晶体,特别是CaF 2,BaF 2或MgF 2晶体具有小于7×10 -7的漫射散射分布函数值,减去Zernike系数后的折射率RMS均匀度小于15×10 -8, (111)方向的双折射的RMS值小于0.2nm / cm。 优选地,在193nm的能量密度为10mJ / cm 2的10×10 9个激光脉冲照射之后,晶体表现出小于5×10 -4 cm -1的损耗系数。 此外,它们在(100)方向或(111)方向上具有小于0.35nm / cm的RMS双折射。
摘要:
A device having at least one screw plug for screwing into a first tapped hole of a housing or housing part of the device, the at least one screw plug including a device for sealing, such as a sealing ring, for the connection to the housing in a manner forming a seal, e.g., against the escape of oil. Introduced into the screw plug is a second tapped hole by which a sensor is releasably connectable, e.g., is able to be screwed in. The screw plug includes an end stop for conducting acoustical waves and for the simultaneous mechanical limit for screwing in the screw plug.
摘要:
The method of making a vacuum tube collector or X-ray tube, which includes a matching glass-metal joint, includes providing a glass tube (1) made of a glass with a composition, in percent by weight on the basis of oxide content, consisting of B2O3, 8-11.5; Al2O3, 5-9; Na2O, 5-9; K2O, 0-5; CaO, 0.4-1.5; balance, SiO2; and bonding, preferably fusing or melting, an end portion of the glass tube (1) with a metal part (2) in order to bond or attach the glass tube to the metal part, thus forming a long-lasting glass-metal joint. The method of making the glass-metal joint is performed without using intermediary glass compositions of varying thermal conductivities. In the case of the vacuum tube collector the method can provide the basis for an automated manufacture of the vacuum tube collector.
摘要:
The invention relates to a hydraulic fluid accumulator (30) having a high-pressure chamber (32) and a low-pressure chamber (33), wherein the high-pressure chamber (32) provided with an equalizing volume (36) is disposed in the low-pressure chamber (33). Provided at the hydraulic fluid accumulator (30) is an external connection (34) for the equalizing volume (36), by means of which connection the equalizing volume (36) can be filled with a gas having a predefinable pressure.
摘要:
The invention relates to a method for producing a monocrystalline or polycrystalline semiconductor material by way of directional solidification, wherein lumpy semiconductor raw material is introduced into a melting crucible and melted therein and directionally solidified, in particular using the vertical gradient freeze method.In order to prevent contamination and damage, the semiconductor raw material is melted from the upper end of the melting crucible. The molten material trickles downward, so that semiconductor raw material which has not yet melted gradually slumps in the melting crucible. In this case, the additional semiconductor raw material is replenished to the melting crucible from above onto a zone of semiconductor raw material which has not yet melted or is not completely melted, in order at least partly to compensate for a volumetric shrinkage of the semiconductor raw material and to increase the filling level of the crucible.In order to reduce the melting-on time and to influence the thermal conditions in the system as little as possible, the semiconductor raw material to be replenished is heated by the purposeful introduction of heat to a temperature below the melting temperature of the semiconductor raw material and introduced into the container in the heated state.
摘要:
Single crystals with low scattering, small refractive index differences and few small angle grain boundaries have a bi-directional scattering distribution function value (BSDF) of less than 1.5*10−6 or 5*10−7.
摘要:
The invention relates to the production of bulky monocrystalline metal or semi-metal bodies, in particular of a monocrystalline Si ingot, using the vertical gradient freeze (VGF) method by directional solidification of a melt in a melting crucible having a polygonal basic shape.According to the invention, the entire bottom of the melting crucible is completely covered with a thin seed crystal plate made of the monocrystalline semi-metal or metal. Throughout the procedure, the bottom of the melting crucible is kept below the melting temperature of the semi-metal or metal in order to prevent melting of the seed crystal plate.Monocrystalline ingots produced in this way are distinguished by a low average dislocation density of for example less than 105 cm−2, allowing the production of very efficient monocrystalline Si solar cells.
摘要:
The invention relates to a vehicle having a drive engine/motor (2) for driving a locomotive drive (6) and for operating at least one hydraulic working circuit (4). The vehicle, has a hydraulic accumulator (11) which is connected to a hydraulic machine (12). The hydraulic machine, (12) is connected to an output shaft (5) which connects the drive engine/motor (2) to the locomotive drive (6).
摘要:
The invention relates to a process for producing an electrical contact, in which a coating that provides the contact is applied to a carrier by means of laser welding, such that a pulsed laser is employed as the coating material is introduced, in at least one laser pulse draw. The operating parameters are so selected that during the welding process the temperature in the welding area oscillates around the melting point, specifically in such a way that the melt alternately liquefies and again solidifies.