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公开(公告)号：US07952071B2
公开(公告)日：2011-05-31
申请号：US12162071
申请日：2007-01-24
申请人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Masahiro Hatakeyama , Kenji Terao , Takeshi Murakami , Katsuya Okumura , Tatsuhiko Higashiki
发明人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Masahiro Hatakeyama , Kenji Terao , Takeshi Murakami , Katsuya Okumura , Tatsuhiko Higashiki
IPC分类号： G01N23/00
CPC分类号： H01J37/29 , H01J37/045 , H01J2237/2446
摘要： Provided is a defect inspection apparatus and an inspection (or evaluation) method with highly improved accuracy, which would not be provided by the prior art, in the defect inspection apparatus used in a manufacturing process of a semiconductor device.Provided is a method for inspecting a sample surface with a projection type electron beam inspection apparatus, comprising the steps of: forming such an irradiation area on the sample surface by an electron beam generated from an electron gun 21 that has approximately a circular or elliptical shape of a size larger than a pattern on the sample surface; irradiating the electron beam substantially onto a center of the pattern on the sample surface; and forming an image on an electron detection plane of a detector from secondary electrons emanating from the sample surface in response to the irradiation of the electron beam for inspecting the sample surface.
摘要翻译： 提供了在半导体器件的制造工艺中使用的缺陷检查装置中，现有技术不能提供高精度的缺陷检查装置和检查（或评价）方法。 提供一种用投影型电子束检查装置检查样品表面的方法，包括以下步骤：通过由具有大致圆形或椭圆形的电子枪21产生的电子束在样品表面上形成这样的照射区域 尺寸大于样品表面上的图案; 将电子束基本上照射到样品表面上的图案的中心; 以及响应于用于检查样品表面的电子束的照射，从从样品表面发射的二次电子在检测器的电子检测平面上形成图像。
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公开(公告)号：US07100146B2
公开(公告)日：2006-08-29
申请号：US10636577
申请日：2003-08-08
申请人： Takashi Sato , Takuya Kouno , Takashi Sakamoto , Yoshiyuki Shioyama , Tatsuhiko Higashiki , Ichiro Mori , Noboru Yokoya
发明人： Takashi Sato , Takuya Kouno , Takashi Sakamoto , Yoshiyuki Shioyama , Tatsuhiko Higashiki , Ichiro Mori , Noboru Yokoya
IPC分类号： G06F17/50
CPC分类号： G03F9/7092
摘要： A design system of an alignment mark for manufacturing a semiconductor device includes a memory which stores at least mark data including pattern information regarding plural kinds of marks and process data including condition information of manufacturing processes, and a first process simulator which simulates a substrate structure before patterning based on the process data, the substrate structure being formed in an identified manufacturing process. Moreover, the design system includes a second process simulator which simulates a processed shape of an identified mark after the patterning based on the simulated substrate structure and the process data, the mark formed in the manufacturing process, a signal waveform simulator which simulates a detection signal waveform of the mark, the waveform being obtained from the simulated processed shape of the mark, and a signal evaluation device which evaluates a suitability of the mark for the identified manufacturing process based on the simulated detection signal waveform.
摘要翻译： 用于制造半导体器件的对准标记的设计系统包括：存储器，其至少存储包括关于多种标记的图案信息的标记数据和包括制造过程的条件信息的处理数据;以及第一处理模拟器，其模拟前面的衬底结构 基于工艺数据构图，基板结构在识别的制造工艺中形成。 此外，设计系统包括第二处理模拟器，其基于模拟的基板结构和处理数据，在制造过程中形成的标记，模拟检测信号的信号波形模拟器，模拟图案化之后的识别标记的处理形状 标记的波形，从标记的模拟处理形状获得的波形，以及基于模拟的检测信号波形来评估用于所识别的制造处理的标记的适合性的信号评估装置。
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13.发明授权Displacement correction apparatus, exposure system, exposure method and a computer program product 有权位移校正装置，曝光系统，曝光方法和计算机程序产品公开(公告)号：US07046334B2
公开(公告)日：2006-05-16
申请号：US10808300
申请日：2004-03-25
申请人： Takuya Kono , Tatsuhiko Higashiki
发明人： Takuya Kono , Tatsuhiko Higashiki
CPC分类号： G03F7/703
摘要： An exposure system includes, (a) an exposure apparatus, and (b) a displacement correction apparatus having a curvature information storage unit configured to store curvature information of a reticle; a displacement information calculation unit configured to calculate displacement generated in the reticle being fixed on a reticle stage of an exposure apparatus based on the curvature information; and a correction information calculation unit configured to calculate correction information for correcting a projection lens of the exposure apparatus based on the displacement.
摘要翻译： 曝光系统包括：（a）曝光装置，和（b）具有曲率信息存储单元的位移校正装置，其被配置为存储标线的曲率信息; 位移信息计算单元，被配置为基于所述曲率信息计算在所述掩模版上产生的位移，所述位移固定在所述曝光装置的标线片平台上; 以及校正信息计算单元，被配置为基于所述位移来计算校正所述曝光装置的投影透镜的校正信息。
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公开(公告)号：US20060001846A1
公开(公告)日：2006-01-05
申请号：US11170165
申请日：2005-06-30
申请人： Takuya Kono , Tatsuhiko Higashiki , Takashi Sato , Shoji Mimotogi , Soichi Inoue
发明人： Takuya Kono , Tatsuhiko Higashiki , Takashi Sato , Shoji Mimotogi , Soichi Inoue
IPC分类号： G03B27/00
CPC分类号： G03F7/70625
摘要： An exposure system includes a simulator speculating first and second calculated doses to project first and second reference marks onto first and second resist films, respectively, an exposure tool projecting the first reference mark onto the first resist film at test doses to form test resist patterns, a choose module choosing an optimum pattern among the test resist patterns and choosing a first optimum dose used for the optimum pattern, and a dose calculator calculating a second optimum dose for the second reference mark by correcting the first optimum dose based on the first and the second calculated doses.
摘要翻译： 曝光系统包括模拟器，分别将第一和第二参考标记分别投影到第一和第二抗蚀剂膜上的第一和第二计算剂量，曝光工具以测试剂量将第一参考标记投影到第一抗蚀剂膜上以形成测试抗蚀图案， 选择模块，在测试抗蚀剂图案中选择最佳图案，并选择用于最佳图案的第一最佳剂量;以及剂量计算器，通过基于第一和第二图像校正第一最佳剂量来计算第二参考标记的第二最佳剂量 秒计算剂量。
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公开(公告)号：US06813001B2
公开(公告)日：2004-11-02
申请号：US10283252
申请日：2002-10-30
IPC分类号： G03B2742
CPC分类号： G03F9/7026 , G03B27/42 , G03F7/70258 , G03F7/703 , G03F9/7034
摘要： An exposure method comprising measuring a position distribution, in an optical axis direction of the optical system, on a measurement area surface of the wafer which is not irradiated with the exposure light, computing a tilt component and a curved component of the measurement area surface on the basis of the measured position distribution, obtaining a leveling amount by which the measurement area surface is made to become orthogonal to the optical axis direction, on the basis of the tilt component, obtaining an adjustment amount for an imaging characteristic of the optical system on the basis of the curved component, and irradiating the measurement area with the exposure light on the basis of the obtained leveling amount and adjustment amount while the measurement area surface and the imaging characteristic are adjusted.
摘要翻译： 一种曝光方法，包括测量在光学系统的光轴方向上的未被曝光光照射的晶片的测量区域表面上的位置分布，计算测量区域表面的倾斜分量和弯曲分量 测量位置分布的基础，基于倾斜分量获得测量区域表面与光轴方向正交的调平量，获得用于光学系统的成像特性的调整量 基于所述弯曲成分的基准，并且在调整测量面积和成像特性的同时，基于获得的调平量和调节量，用曝光光照射测量区域。
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公开(公告)号：US08122385B2
公开(公告)日：2012-02-21
申请号：US12129167
申请日：2008-05-29
申请人： Kazuya Fukuhara , Tatsuhiko Higashiki , Toshiya Kotani , Satoshi Tanaka , Takashi Sato , Akiko Mimotogi , Masaki Satake
发明人： Kazuya Fukuhara , Tatsuhiko Higashiki , Toshiya Kotani , Satoshi Tanaka , Takashi Sato , Akiko Mimotogi , Masaki Satake
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： In a model-based OPC which makes a suitable mask correction for each mask pattern using an optical image intensity simulator, a mask pattern is divided into subregions and the model of optical image intensity simulation is changed according to the contents of the pattern in each subregion. When the minimum dimensions of the mask pattern are smaller than a specific threshold value set near the exposure wavelength, the region is calculated using a high-accuracy model and the other regions are calculated using a high-speed model.
摘要翻译： 在基于模型的OPC中，使用光学图像强度模拟器对每个掩模图案进行适当的掩模校正，将掩模图案划分为子区域，并且根据每个子区域中的图案的内容来改变光学图像强度模拟模型 。 当掩模图案的最小尺寸小于在曝光波长附近设置的特定阈值时，使用高精度模型计算该区域，并且使用高速模型来计算其它区域。
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公开(公告)号：US20090148782A1
公开(公告)日：2009-06-11
申请号：US12330653
申请日：2008-12-09
CPC分类号： G03F7/70433 , G03F7/70066 , G03F7/70425
摘要： An exposure method includes setting a photo mask into an exposure apparatus. The exposure apparatus includes an opening/closing unit configured to block a part of exposure light from a light source to the wafer. The photo mask having a product area in which a pattern to be used when a central part of a wafer is exposed is formed and peripheral exposure areas in each of which a pattern to be used when a peripheral area is exposed is formed. The peripheral exposure areas are formed to have a plurality of types of pattern densities. Then, a peripheral part of the wafer exposed. When exposing, the opening/closing unit is opened such that one or more of exposed photo mask areas selected from among the peripheral exposure areas has a pattern density corresponding to a shot position of the peripheral part.
摘要翻译： 曝光方法包括将光掩模设置到曝光装置中。 曝光装置包括：打开/关闭单元，被配置为将来自光源的曝光光的一部分阻挡到晶片。 形成具有当晶片的中心部分露出时要使用的图案的产品区域的光掩模，并且形成周边曝光区域，其中当外围区域暴露时使用的图案。 外围曝光区域形成为具有多种图案密度。 然后，晶片的周边部分暴露出来。 当曝光时，打开/关闭单元使得从外围曝光区域中选择的一个或多个曝光的光掩模区域具有与周边部分的拍摄位置对应的图案密度。
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18.发明授权Aligner evaluation system, aligner evaluation method, a computer program product, and a method for manufacturing a semiconductor device 有权对准器评估系统，对准器评估方法，计算机程序产品和半导体器件的制造方法公开(公告)号：US07546178B2
公开(公告)日：2009-06-09
申请号：US11882620
申请日：2007-08-03
CPC分类号： G03F7/705 , G03F7/70525 , G03F7/70541 , G03F7/70591 , G03F7/70991
摘要： An aligner evaluation system includes (a) an error calculation module configured to calculate error information on mutual optical system errors among a plurality of aligners; (b) a simulation module configured to simulate device patterns to be delineated by each of the aligners based on the error information; and (c) a evaluation module configured to evaluate whether each of the aligners has appropriate performances for implementing an organization of a product development machine group based on the simulated device pattern.
摘要翻译： 对准器评估系统包括：（a）误差计算模块，被配置为计算多个对准器之间的相互光学系统误差的误差信息; （b）模拟模块，被配置为基于所述误差信息来模拟由每个对准器描绘的装置模式; 以及（c）评估模块，其被配置为基于所述模拟设备模式来评估每个对准器是否具有用于实现产品开发机器组的组织的适当性能。
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公开(公告)号：US20090141378A1
公开(公告)日：2009-06-04
申请号：US12332628
申请日：2008-12-11
IPC分类号： G02B7/185
摘要： An optical element includes a substrate, a magnetostrictive film arranged on the substrate, a film thickness of the magnetostrictive film varying in accordance with intensity of a magnetic field, and a reflection film arranged on the magnetostrictive film and reflects light. An optical apparatus includes a stage including a holder provided with plural holes arranged in a carrying surface thereof for carrying an optical element provided with a magnetostrictive film arranged on a substrate, a film thickness of the magnetostrictive film varying in accordance with intensity of a magnetic field, and a reflection film arranged on the magnetostrictive film and reflecting light, plural magnetic field generation parts embedded in the plural holes, and a control mechanism for controlling the magnetic field generated by each of the plural magnetic field generation parts, and controlling the film thickness of the magnetostrictive film.
摘要翻译： 光学元件包括基板，设置在基板上的磁致伸缩膜，磁致伸缩膜的膜厚度根据磁场的强度而变化，以及布置在磁致伸缩膜上并反射光的反射膜。 一种光学装置，包括：台架，其具有设置有多个孔的保持器，所述保持器设置在其承载表面上，用于承载设置有设置在基板上的磁致伸缩膜的光学元件，所述磁致伸缩膜的膜厚度根据磁场强度而变化 以及布置在磁致伸缩膜上并反射光的反射膜，嵌入在多个孔中的多个磁场产生部分和用于控制由多个磁场产生部分中的每一个产生的磁场的控制机构，并且控制膜厚度 的磁致伸缩膜。
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公开(公告)号：US20090026368A1
公开(公告)日：2009-01-29
申请号：US12162071
申请日：2007-01-24
申请人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Masahiro Hatakeyama , Kenji Terao , Takeshi Murakami , Katsuya Okumura , Tatsuhiko Higashiki
发明人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Masahiro Hatakeyama , Kenji Terao , Takeshi Murakami , Katsuya Okumura , Tatsuhiko Higashiki
IPC分类号： G01N23/00
CPC分类号： H01J37/29 , H01J37/045 , H01J2237/2446
摘要： Provided is a defect inspection apparatus and an inspection (or evaluation) method with highly improved accuracy, which would not be provided by the prior art, in the defect inspection apparatus used in a manufacturing process of a semiconductor device.Provided is a method for inspecting a sample surface with a projection type electron beam inspection apparatus, comprising the steps of: forming such an irradiation area on the sample surface by an electron beam generated from an electron gun 21 that has approximately a circular or elliptical shape of a size larger than a pattern on the sample surface; irradiating the electron beam substantially onto a center of the pattern on the sample surface; and forming an image on an electron detection plane of a detector from secondary electrons emanating from the sample surface in response to the irradiation of the electron beam for inspecting the sample surface.
摘要翻译： 提供了在半导体器件的制造工艺中使用的缺陷检查装置中，现有技术不能提供高精度的缺陷检查装置和检查（或评价）方法。 提供一种用投影型电子束检查装置检查样品表面的方法，包括以下步骤：通过由具有大致圆形或椭圆形的电子枪21产生的电子束在样品表面上形成这样的照射区域 尺寸大于样品表面上的图案; 将电子束基本上照射到样品表面上的图案的中心; 以及响应于用于检查样品表面的电子束的照射，从从样品表面发射的二次电子在检测器的电子检测平面上形成图像。
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