公开(公告)号：US07133263B2

公开(公告)日：2006-11-07

申请号：US10323339

申请日：2002-12-17

申请人： Edward Hin Pong Lee ,  Kim Y. Lee ,  Tsann Lin

发明人： Edward Hin Pong Lee ,  Kim Y. Lee ,  Tsann Lin

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3906 ,  Y10T29/49021 ,  Y10T29/49048

摘要： A self aligned magnetoresistive sensor having a narrow and well defined track width and method of manufacture thereof.

摘要翻译： 具有窄且良好限定的轨道宽度的自对准磁阻传感器及其制造方法。

公开(公告)号：US20130164562A1

公开(公告)日：2013-06-27

申请号：US13335642

申请日：2011-12-22

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/39 ,  H01F7/06

CPC分类号： G11B5/3906 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3909 ,  G11B5/398 ,  G11B5/40 ,  H01F10/3254 ,  H01F10/3295 ,  Y10T29/4902 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143

摘要： The invention provides a tunneling magnetoresistance (TMR) read sensor with a long diffusion path and ex-situ interfaces in a sense layer structure. The sense layer structure comprises a first sense layer preferably formed of a ferromagnetic Co—Fe film, a second sense layer preferably formed of a ferromagnetic Co—Fe—B film, and a third sense layer preferably formed of a ferromagnetic Ni—Fe film. The sense layer structure has a long diffusion path (defined as a total thickness of the first and second sense layers) and ex-situ interfaces for suppressing unwanted diffusions of Ni atoms. Alternatively, the sense layer structure comprises a first sense layer preferably formed of a ferromagnetic Co—Fe film, a second sense layer preferably formed of a ferromagnetic Co—Fe—B film, a third sense layer preferably formed of a ferromagnetic Co—Fe—B—Hf film, and a fourth sense layer preferably formed of a ferromagnetic Ni—Fe film.

摘要翻译： 本发明提供了一种在感应层结构中具有长扩散路径和非原位界面的隧道磁阻（TMR）读取传感器。 感测层结构包括优选由铁磁Co-Fe膜形成的第一感测层，优选由铁磁性Co-Fe-B膜形成的第二感测层和优选由铁磁性Ni-Fe膜形成的第三感测层。 感应层结构具有长的扩散路径（定义为第一和第二感测层的总厚度）和用于抑制Ni原子的不期望的扩散的非原位界面。 或者，感测层结构包括优选由铁磁性Co-Fe膜形成的第一感测层，优选由铁磁性Co-Fe-B膜形成的第二感测层，优选由铁磁性Co-Fe-B膜形成的第三感测层， B-Hf膜，以及优选由铁磁性Ni-Fe膜形成的第四感测层。

公开(公告)号：US08325450B2

公开(公告)日：2012-12-04

申请号：US12332010

申请日：2008-12-10

申请人： Ying Hong ,  Kochan Ju ,  Tsann Lin ,  Ching Hwa Tsang

发明人： Ying Hong ,  Kochan Ju ,  Tsann Lin ,  Ching Hwa Tsang

IPC分类号： G01B5/66

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  Y10T428/1114

摘要： A magnetic structure in one embodiment includes a tunnel barrier layer; a free layer; and a buffer layer between the tunnel barrier layer and the free layer, wherein a cross sectional area of the tunnel barrier layer in a direction parallel to a plane of deposition thereof is greater than a cross sectional area of the free layer in a direction parallel to a plane of deposition thereof, wherein a cross sectional area of the buffer layer in a direction parallel to a plane of deposition thereof is greater than a cross sectional area of the free layer in the direction parallel to the plane of deposition thereof. Additional systems and methods are also presented.

摘要翻译： 一个实施例中的磁性结构包括隧道势垒层; 自由层 以及所述隧道势垒层和所述自由层之间的缓冲层，其中所述隧道势垒层在与其沉积平面平行的方向上的横截面面积大于所述自由层在平行于所述隧道势垒层的方向上的横截面积 其沉积平面，其中在平行于其沉积平面的方向上的缓冲层的横截面面积大于在平行于其沉积平面的方向上的自由层的横截面面积。 还介绍了其他系统和方法。

公开(公告)号：US07796364B2

公开(公告)日：2010-09-14

申请号：US11618527

申请日：2006-12-29

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/39

CPC分类号： G11B5/3912 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/30 ,  H01F10/3272 ,  H01F41/302

摘要： A current-perpendicular-to-plane (CPP) magnetoresistance sensor and a method for forming a current-perpendicular-to-plane (CPP) magnetoresistance sensor. The method includes providing a ferromagnetic shield layer and disposing one or more seed layers on the ferromagnetic shield layer. The method also includes disposing a pinning layer on the one or more seed layers, wherein the pinning layer excludes PtMn, and disposing a pinned layer on the pinning layer. The shield layer, each of the one or more seed layers, the pinning layer, and the pinned layer are comprised of compounds having face-centered-cubic structures.

摘要翻译： 电流垂直平面（CPP）磁阻传感器和形成电流 - 垂直平面（CPP）磁阻传感器的方法。 该方法包括提供铁磁屏蔽层并在铁磁屏蔽层上设置一个或多个晶种层。 所述方法还包括在所述一个或多个晶种层上设置钉扎层，其中所述钉扎层排除PtMn，并且将钉扎层设置在钉扎层上。 屏蔽层，一个或多个种子层中的每一个，钉扎层和被钉扎层由具有面心立方结构的化合物组成。

公开(公告)号：US07697244B2

公开(公告)日：2010-04-13

申请号：US11423697

申请日：2006-06-12

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/127

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/3912 ,  G11B5/3932 ,  G11B5/3967 ,  G11B2005/3996

摘要： A magnetic head in one embodiment includes first and second ferromagnetic shield layers, first and second nonmagnetic read-gap layers positioned between the first and second ferromagnetic shield layers, a sensor used in a current-in-plane (CIP) mode, first and second longitudinal bias layers electrically coupled with the sensor, and first and second conducting layers electrically coupled with the first and second longitudinal bias layers, respectively.

摘要翻译： 一个实施例中的磁头包括第一和第二铁磁屏蔽层，位于第一和第二铁磁屏蔽层之间的第一和第二非磁性读取间隙层，在平面（CIP）模式中使用的传感器，第一和第二 与传感器电耦合的纵向偏置层，以及分别与第一和第二纵向偏置层电耦合的第一和第二导电层。

公开(公告)号：US07599153B2

公开(公告)日：2009-10-06

申请号：US11362628

申请日：2006-02-27

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/33

CPC分类号： G11B5/3116 ,  G11B5/11 ,  G11B5/3912 ,  G11B5/3932 ,  G11B5/3967 ,  G11B5/398

摘要： A method and apparatus providing a stabilized top shield in a read head used for the longitudinal or perpendicular magnetic recording is disclosed. The top shield includes a laminate structure including at least three layers of ferromagnetic and antiferromagnetic films in a frame. Unidirectional anisotropy induced at the interface of the ferromagnetic and antiferromagnetic films is optimized by selecting suitable compositions and thicknesses to achieve the stabilization of the top shield while maintaining high permeability. In an alternative method, the top shield includes a ferromagnetic Ni—Fe film in a central region and multiple layers comprising ferromagnetic Co—Fe and Ni—Fe layers and an antiferromagnetic layer. Unidirectional anisotropy induced at the interfaces of ferromagnetic and antiferromagnetic layers by selecting suitable compositions and thicknesses of the ferromagnetic and antiferromagnetic layers to achieve the stabilization of the top shield through magnetostatic interactions between the central and side regions.

摘要翻译： 公开了一种在用于纵向或垂直磁记录的读取头中提供稳定的顶部屏蔽的方法和装置。 顶部屏蔽包括在框架中包括至少三层铁磁性和反铁磁性膜的层压结构。 通过选择合适的组成和厚度来优化在铁磁和反铁磁膜的界面处引起的单向各向异性，以实现顶部屏蔽的稳定性，同时保持高磁导率。 在替代方法中，顶部屏蔽包括在中心区域的铁磁性Ni-Fe膜，以及包含铁磁Co-Fe和Ni-Fe层的多层和反铁磁性层。 通过选择铁磁和反铁磁层的合适组成和厚度来实现铁磁性和反铁磁性层的界面处的单向各向异性，以通过中央和侧面区域之间的静磁相互作用实现顶部屏蔽的稳定。

公开(公告)号：US07554775B2

公开(公告)日：2009-06-30

申请号：US11069306

申请日：2005-02-28

申请人： Jinshan Li ,  Tsann Lin

发明人： Jinshan Li ,  Tsann Lin

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996

摘要： A giant magnetoresistance (GMR) sensor with strongly pinning and pinned layers is described for magnetic recording at ultrahigh densities. The pinning layer is an antiferromagnetic (AFM) iridium-manganese-chromium (Ir—Mn—Cr) film having a Mn content of approximately from 70 to 80 atomic percent and having a Cr content of approximately from 1 to 10 atomic percent. The first pinned layer is preferably a ferromagnetic Co—Fe having an Fe content of approximately from 20 to 80 at % and having high, positive saturation magnetostriction. The second pinned layer is preferably a ferromagnetic Co—Fe having an Fe content of approximately from 0 to 10 atomic percent. The net magnetic moment of the first and second pinned layers is designed to be nearly zero in order to achieve a pinning field of beyond 3,000 Oe.

摘要翻译： 描述了具有强钉扎和钉扎层的巨磁阻（GMR）传感器用于超高密度的磁记录。 钉扎层是具有大约70至80原子％的Mn含量并且Cr含量约为1至10原子％的反铁磁（AFM）铱 - 锰 - 铬（Ir-Mn-Cr）膜。 第一被钉扎层优选为Fe含量为约20至80at％且具有高正饱和磁致伸缩的铁磁性Co-Fe。 第二被钉扎层优选为Fe含量约为0〜10原子％的铁磁Co-Fe。 第一和第二被钉扎层的净磁矩被设计为几乎为零，以便实现超过3,000Oe的钉扎场。

公开(公告)号：US20070285847A1

公开(公告)日：2007-12-13

申请号：US11423697

申请日：2006-06-12

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/3912 ,  G11B5/3932 ,  G11B5/3967 ,  G11B2005/3996

摘要： A magnetic head in one embodiment includes first and second ferromagnetic shield layers, first and second nonmagnetic read-gap layers positioned between the first and second ferromagnetic shield layers, a sensor used in a current-in-plane (CIP) mode, first and second longitudinal bias layers electrically coupled with the sensor, and first and second conducting layers electrically coupled with the first and second longitudinal bias layers, respectively.

摘要翻译： 一个实施例中的磁头包括第一和第二铁磁屏蔽层，位于第一和第二铁磁屏蔽层之间的第一和第二非磁性读取间隙层，在平面（CIP）模式中使用的传感器，第一和第二 与传感器电耦合的纵向偏置层，以及分别与第一和第二纵向偏置层电耦合的第一和第二导电层。

公开(公告)号：US07187524B2

公开(公告)日：2007-03-06

申请号：US11064723

申请日：2005-02-23

申请人： Tsann Lin ,  Daniele Mauri

发明人： Tsann Lin ,  Daniele Mauri

IPC分类号： G11B5/39 ,  H01F10/32

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/012 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/332 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/302 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49046

摘要： A giant magnetoresistance (GMR) magnetic head that includes a GMR read sensor with a stitched longitudinal bias (LB) stack. The GMR read sensor includes seed, pinning, pinned, spacer, sense and cap layers in a read region, and its seed and pinning layers are extended into two side regions. The LB stack is fabricated on the pinning layer in the two side regions and includes separation, seed and LB layers. The separation layer, preferably made of an amorphous film, separates the pinning layer from the seed and LB layers and thereby prevents unwanted crystalline effects of the pinning layer. Monolayer photoresist patterning and chemical mechanical polishing may be incorporated into the fabrication process of the GMR head to attain uniform thicknesses of the separation, seed and LB layers, and to align the midplane of the LB layer at the same horizontal level as the midplane of the sense layer.

摘要翻译： 一种巨磁阻（GMR）磁头，其包括具有缝合纵向偏置（LB）堆叠的GMR读取传感器。 GMR读取传感器包括读取区域中的种子，钉扎，固定，间隔物，感测层和盖层，并且其种子和钉扎层延伸到两个侧面区域。 LB堆叠制造在两侧区域的钉扎层上，包括分离，种子和LB层。 优选由非晶膜制成的分离层将钉扎层与种子和LB层分开，从而防止钉扎层的不期望的结晶效应。 可以将单层光致抗蚀剂图案化和化学机械抛光结合到GMR头的制造工艺中以获得分离，种子和LB层的均匀厚度，并且将LB层的中平面对准在与 感觉层。

公开(公告)号：US20060193089A1

公开(公告)日：2006-08-31

申请号：US11069306

申请日：2005-02-28

申请人： Jinshan Li ,  Tsann Lin

发明人： Jinshan Li ,  Tsann Lin

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996

摘要： A giant magnetoresistance (GMR) sensor with strongly pinning and pinned layers is described for magnetic recording at ultrahigh densities. The pinning layer is an antiferromagnetic (AFM) iridium-manganese-chromium (Ir—Mn—Cr) film having a Mn content of approximately from 70 to 80 atomic percent and having a Cr content of approximately from 1 to 10 atomic percent. The first pinned layer is preferably a ferromagnetic Co—Fe having an Fe content of approximately from 20 to 80 at % and having high, positive saturation magnetostriction. The second pinned layer is preferably a ferromagnetic Co—Fe having an Fe content of approximately from 0 to 10 atomic percent. The net magnetic moment of the first and second pinned layers is designed to be nearly zero in order to achieve a pinning field of beyond 3,000 Oe.