专利检索 ap:("David O'Meara" OR "Cory Wajda" OR "Anthony Dip" OR "Michael Toeller" OR "Toshihara Furukawa" OR "Kristen Scheer" OR "Alessandro Callegari" OR "Fred Buehrer" OR "Sufi Zafar" OR "Evgeni Gousev" OR "Anthony Chou" OR "Paul Higgins") AND inv:"Kristen Scheer" 第 2 页

11.

发明授权
Method and system for forming an oxynitride layer by performing oxidation and nitridation concurrently 失效
标题翻译：通过同时进行氧化和氮化来形成氮氧化物层的方法和系统

公开(公告)号：US07517814B2

公开(公告)日：2009-04-14

申请号：US11093262

申请日：2005-03-30

申请人： Cory S. Wajda , Kristen Scheer , Toshihara Furakawa

发明人： Cory S. Wajda , Kristen Scheer , Toshihara Furakawa

IPC分类号： H01L21/33

CPC分类号： H01L21/3144 , C23C8/28 , C23C8/36

摘要： A method for preparing an oxynitride film on a substrate comprising forming the oxynitride film by exposing a surface of the substrate to oxygen radicals and nitrogen radicals formed by plasma induced dissociation of a process gas comprising nitrogen and oxygen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits.

摘要翻译： 一种在衬底上制备氮氧化物膜的方法，包括通过将基底的表面暴露于氧自由基和由等离子体引起的等离子体诱导的包含氮和氧的工艺气体的解离而形成氮氧化合物的方法，所述方法基于经由平面的微波照射的等离子体天线构件具有多个狭缝。