公开(公告)号：US07037758B2

公开(公告)日：2006-05-02

申请号：US10642737

申请日：2003-08-19

申请人： Fumiaki Karasawa ,  Takeshi Yuzawa

发明人： Fumiaki Karasawa ,  Takeshi Yuzawa

IPC分类号： H01L21/48 ,  H01L21/50

CPC分类号： H01L21/6836 ,  H01L21/3043 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2224/11

摘要： The invention provides a method of manufacturing a semiconductor that improves the productivity and the yield of a product, and grinds a semiconductor substrate so that it has almost uniform thickness. The method can include forming a protrusion on a semiconductor substrate having a first area and a second area surrounding the first area. The protrusion protruding above first area. A support being disposed on a surface on which the protrusion is formed, of the semiconductor substrate so that a through hole of the support overlaps with the first area. The semiconductor substrate can be grinded from a surface opposite to the surface on which the protrusion is formed.

摘要翻译： 本发明提供了一种制造半导体的方法，其提高了产品的生产率和产量，并且研磨半导体衬底以使其几乎具有均匀的厚度。 该方法可以包括在具有第一区域的半导体衬底上形成突起并且围绕第一区域形成第二区域。 突起突出在第一区域之上。 在半导体衬底的形成有突起的表面上设置有支撑件，使得支撑件的通孔与第一区域重叠。 可以从与形成有突起的表面相反的表面研磨半导体衬底。