Abstract:
The present invention provides a layered metal/fullerene anode structure for efficient hole injection. The layered anode structure includes one or more layers of electrical conductors and a second layer containing fullerenes. The thickness of the second layer is selected so that the layered structure facilitate hole transfer from the layer to second layer under electrical bias. The present invention also provides a light-emitting device which includes a layered metal/fullerene anode. The device includes an hole transport layer, and a second electrically conductive layer defining a cathode electrode layer. The device includes a layer of light-emissive material between the hole transport layer and the cathode electrode. The device may also include a hole injection layer interposed between the layered metal/fullerene anode and the hole transport layer. The device may also include a dielectric layer attached to the metal layer of the layered metal/fullerene anode.
Abstract:
This disclosure provides photovoltaic modules and methods of making the same. In one implementation, a photovoltaic module includes a plurality of photovoltaic devices configured to absorb light and generate electrical power and a plurality of conductors disposed over the photovoltaic devices. The photovoltaic module further includes a glass layer disposed over the photovoltaic devices, and the glass layer includes a textured surface opposite the plurality of photovoltaic devices. The textured surface includes features configured to diffract light incident the photovoltaic module. The photovoltaic module further includes a diffusive layer disposed over at least a portion of the plurality of conductors.
Abstract:
A new transparent-charge-injection-layer consisting of LiF/Al/Al-doped-SiO has been developed as (i) a cathode for top emitting organic light-emitting diodes (TOLEDs) and as (ii) a buffer layer against damages induced by energetic ions generated during deposition of other functional thin films by sputtering, or plasma-enhanced chemical vapor deposition. A luminance of 1900 cd/m2 and a current efficiency of 4 cd/A have been achieved in a simple testing device structure of ITO/TPD (60 nm)/Alq3 (40 nm)/LiF (0.5 nm)Al (3 nm)/Al-doped-SiO (30 nm). A thickness of 30 nm of Al-doped SiO is also found to protect organic layers from ITO sputtering damage.