公开(公告)号：US07116817B2

公开(公告)日：2006-10-03

申请号：US11235136

申请日：2005-09-27

申请人： Maki Tanaka ,  Masahiro Watanabe ,  Kenji Watanabe ,  Mari Nozoe ,  Hiroshi Miyai

发明人： Maki Tanaka ,  Masahiro Watanabe ,  Kenji Watanabe ,  Mari Nozoe ,  Hiroshi Miyai

IPC分类号： G06K9/00

CPC分类号： G01N23/2251

摘要： A method and apparatus for inspecting a wafer in which a focused charged particle beam is irradiated onto a surface of a wafer on which patterns are formed through a semiconductor device fabrication process, a secondary charged particle image of a desired area of the wafer is obtained by detecting secondary charged particles emitted from the surface of the wafer, and information about image feature amount of each pattern within the desired area from the obtained secondary charged particle beam image. The information about image feature amount is compared with a preset value, and on the basis of a result of the comparison, a quality of patterns which have been formed around the desired area is estimated, and information of a result of the estimation is outputted.

摘要翻译： 一种用于通过半导体器件制造工艺检查其中聚焦的带电粒子束照射到其上形成有图案的晶片的表面上的晶片的方法和装置，通过以下方式获得晶片的期望区域的二次带电粒子图像： 从所获得的二次带电粒子束图像中检测从所述晶片的表面发射的次级带电粒子和关于期望区域内的每个图案的图像特征量的信息。 将关于图像特征量的信息与预设值进行比较，并且基于比较结果，估计在期望区域周围形成的图案的质量，并且输出估计结果的信息。

公开(公告)号：US06952492B2

公开(公告)日：2005-10-04

申请号：US09942213

申请日：2001-08-30

申请人： Maki Tanaka ,  Masahiro Watanabe ,  Kenji Watanabe ,  Mari Nozoe ,  Hiroshi Miyai

发明人： Maki Tanaka ,  Masahiro Watanabe ,  Kenji Watanabe ,  Mari Nozoe ,  Hiroshi Miyai

IPC分类号： G01R31/302 ,  G01N23/225 ,  G01Q20/04 ,  G01Q30/04 ,  H01L21/027 ,  H01L21/66 ,  G06K9/00

CPC分类号： G01N23/2251

摘要： A method and apparatus for inspecting a semiconductor device in which failure occurence conditions on a whole wafer are estimated by calculating the statistic of potential contrasts in pattern sections from sampled images to implement higher throughput, and defective conditions of a process are detected at an early stage with the help of time series data of the estimate result.

摘要翻译： 通过从采样图像计算图案部分中的潜在对比度的统计量来估计在整个晶片上发生故障的半导体器件的方法和装置，以实现更高的吞吐量，并且早期检测到处理的缺陷条件 在估计结果的时间序列数据的帮助下。

公开(公告)号：US08558173B2

公开(公告)日：2013-10-15

申请号：US11518893

申请日：2006-09-12

申请人： Mari Nozoe ,  Hidetoshi Nishiyama ,  Shigeaki Hijikata ,  Kenji Watanabe ,  Koji Abe

发明人： Mari Nozoe ,  Hidetoshi Nishiyama ,  Shigeaki Hijikata ,  Kenji Watanabe ,  Koji Abe

IPC分类号： G01N23/00

CPC分类号： G06T7/0004 ,  G01N23/20 ,  G06T2207/30148 ,  H01J2237/2487 ,  H01J2237/2817

摘要： An electron beam apparatus equipped with a review function of a semiconductor wafer includes a scanning electron microscope to obtain image information of a semiconductor wafer, and an information processing apparatus to process the image information. The information processing apparatus includes a data input unit to receive positional information of a defect on the wafer, a storage for storing a plurality of image information of a position on the wafer corresponding to the positional information, and an image processing unit that retrieves any of the plurality of image information, and classifies the retrieved image information corresponding to the positional information depending on the type of defect.

摘要翻译： 配备有半导体晶片的检查功能的电子束装置包括扫描电子显微镜以获得半导体晶片的图像信息，以及处理图像信息的信息处理装置。 信息处理装置包括：数据输入单元，用于接收晶片上的缺陷的位置信息，存储用于存储与位置信息对应的晶片上的位置的多个图像信息;以及图像处理单元， 多个图像信息，并且根据缺陷的类型对与位置信息相对应的检索到的图像信息进行分类。

公开(公告)号：US20050006583A1

公开(公告)日：2005-01-13

申请号：US10916451

申请日：2004-08-12

申请人： Mari Nozoe ,  Hidetoshi Nishiyama ,  Shigeaki Hijikata ,  Kenji Watanabe ,  Koji Abe

发明人： Mari Nozoe ,  Hidetoshi Nishiyama ,  Shigeaki Hijikata ,  Kenji Watanabe ,  Koji Abe

IPC分类号： G01Q30/02 ,  G01N21/956 ,  G01N23/20 ,  G01N23/225 ,  G01Q30/04 ,  G01Q30/20 ,  G01R1/06 ,  G01R31/302 ,  H01L21/027 ,  H01L21/66 ,  G21K7/00 ,  G01N23/00

CPC分类号： G06T7/0004 ,  G01N23/20 ,  G06T2207/30148 ,  H01J2237/2487 ,  H01J2237/2817

摘要： A sample inspection system having a sample stage holding a sample to be inspected corresponding to a selected file, electron beam optics so as to radiate an electron beam to the sample, a detector unit that detects a secondly generated signal attributable to the electron beam, a storage for storing a plurality of images obtained from the secondly generated signal and information for classifying the plurality of images by a type of defect in the sample, and an image processing unit. The image processing unit retrieves any of the plurality of images and classifies the retrieved image depending on the type of defect including an electrical defect and a defect in the figure.

摘要翻译： 一种样本检查系统，具有样本台，其保持对应于所选择的文件的待检查样本，电子束光学器件，以便向样本辐射电子束;检测器单元，其检测归因于电子束的第二生成信号; 用于存储从第二生成信号获得的多个图像的存储器和用于通过样本中的缺陷类型对多个图像进行分类的信息，以及图像处理单元。 图像处理单元检索多个图像中的任一个，并且根据包括图中的电缺陷和缺陷的缺陷的类型对检索到的图像进行分类。

公开(公告)号：US06613593B2

公开(公告)日：2003-09-02

申请号：US09942862

申请日：2001-08-31

申请人： Maki Tanaka ,  Masahiro Watanabe ,  Kenji Watanabe ,  Mari Nozoe ,  Hiroshi Miyai

发明人： Maki Tanaka ,  Masahiro Watanabe ,  Kenji Watanabe ,  Mari Nozoe ,  Hiroshi Miyai

IPC分类号： G01R3126

CPC分类号： G01N23/2251

摘要： A method and apparatus for inspecting a semiconductor device in which failure occurrence conditions on a whole wafer are estimated by calculating the statistic of potential contrasts in pattern sections from sampled images to implement higher throughput, and defective conditions of a process are detected at an early stage with the help of time series data of the estimated result.

摘要翻译： 通过从采样图像中计算图案部分中的潜在对比度的统计量来估计半导体装置的检查方法和装置，其中通过计算采样图像中的图形部分的电位对比度的统计量来估计整个晶片的故障发生状况，以实现更高的吞吐量， 在估计结果的时间序列数据的帮助下。

公开(公告)号：US08552373B2

公开(公告)日：2013-10-08

申请号：US13321583

申请日：2010-05-18

申请人： Momoyo Enyama ,  Hiroya Ohta ,  Taku Ninomiya ,  Mari Nozoe

发明人： Momoyo Enyama ,  Hiroya Ohta ,  Taku Ninomiya ,  Mari Nozoe

IPC分类号： H01J37/26 ,  H01J37/28 ,  G01N23/22 ,  G01N23/225

CPC分类号： H01J37/28 ,  H01J37/265 ,  H01J2237/2446 ,  H01J2237/2817

摘要： Disclosed is a charged particle beam device, wherein multibeam secondary electron detectors (121a, 121b, 121c) and a single beam detector (140; 640) are provided, and under the control of a system control unit (135), an optical system control circuit (139) controls a lens and a beam selecting diaphragm (141) and switches the electrooptical conditions between those for multibeam mode and those for single beam mode, thereby one charged particle beam device can be operated as a multibeam charged particle device and a single beam charged particle device by switching. Thus, observation conditions are flexibly changed in accordance with an object to be observed, and a sample can be observed with a high accuracy and high efficiency.

摘要翻译： 公开了一种带电粒子束装置，其中提供多波束二次电子检测器（121a，121b，121c）和单光束检测器（140; 640），并且在系统控制单元（135）的控制下，光学系统控制 电路（139）控制透镜和选择光阑（141），并将电光条件切换到用于多光束模式的光学条件和单光束模式之间，从而一个带电粒子束装置可以作为多光束带电粒子装置和单个 光束带电粒子装置通过切换。 因此，观察条件根据待观察的目标灵活地变化，并且可以高精度和高效率地观察样品。

公开(公告)号：US20110133066A1

公开(公告)日：2011-06-09

申请号：US13059540

申请日：2009-09-14

申请人： Mari Nozoe ,  Taku Ninomiya

发明人： Mari Nozoe ,  Taku Ninomiya

IPC分类号： H01J37/26 ,  G12B13/00 ,  G01N23/22

CPC分类号： H01J37/28 ,  H01J37/265 ,  H01J2237/20292 ,  H01J2237/2817 ,  H01L22/12

摘要： An inspection apparatus and method are provided capable of suppressing electron beam focus drifts and irradiation-position deviations caused by sample surface charge-up by irradiation of an electron beam during micropattern inspection to thereby avoid false defect detection and also shorten an inspection time. The apparatus captures a plurality of images of alignment marks provided at dies, stores in a storage device deviations between the central coordinates of alignment mark images and the coordinates of the marks as a coordinate correction value, measures heights at a plurality of coordinates on the sample surface, captures images of the measured coordinates to perform focus adjustment, saves the relationship between such adjusted values and the sensor-measured heights in the storage as height correction values, and uses inspection conditions including the image coordinate correction values saved in the storage and the height correction values to correct the image coordinates and height of the sample.

摘要翻译： 提供了一种检查装置和方法，其能够通过微图案检查期间的电子束照射而抑制由样品表面充电引起的电子束聚焦漂移和照射位置偏差，从而避免错误检测，并且缩短检查时间。 该装置捕获在模具处设置的对准标记的多个图像，存储在存储装置中的对准标记图像的中心坐标和标记坐标之间的偏差作为坐标校正值，测量样本上的多个坐标上的高度 表面，捕获测量坐标的图像以执行焦点调整，将这种调整值与存储器中传感器测量的高度之间的关系保存为高度校正值，并使用检查条件，包括保存在存储器中的图像坐标校正值和 高度校正值来校正样品的图像坐标和高度。

公开(公告)号：US20080302964A1

公开(公告)日：2008-12-11

申请号：US12190388

申请日：2008-08-12

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01N23/00 ,  G01R31/305

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

摘要翻译： 电路图案检查方法及其装置，其中待检查的样品的待检查部分的整体部分处于预定的改变状态，被检查的部分用成像高分辨率照射， 在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级 通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

公开(公告)号：US07211797B2

公开(公告)日：2007-05-01

申请号：US11098699

申请日：2005-04-05

申请人： Hidetoshi Nishiyama ,  Mari Nozoe

发明人： Hidetoshi Nishiyama ,  Mari Nozoe

IPC分类号： G21K7/00

CPC分类号： H01J37/026 ,  H01J37/226 ,  H01J37/28 ,  H01J2237/047 ,  H01J2237/2594 ,  H01J2237/2817

摘要： The present invention provides an inspection technique using a charged particle beam by which a method of setting a condition for optimally charging an object to be inspected without relying on an operator's experience is established and a voltage contrast image with higher efficiency of defect detection than ever before can be obtained. The inspection method comprises the steps of scanning an area on a surface of a substrate having a specific pattern formed thereon with a primary charged particle beam, detecting signals of secondary electrons emitted from the area, forming an image of the area from detected signals, and generating a histogram from the image. All these steps are performed each time a condition of irradiation with the charged particle beam is changed. When two or more separate peaks appear in the histogram, the histogram is determined as an optimal condition for inspection, and inspection is performed based on the image obtained under that condition.

摘要翻译： 本发明提供了使用带电粒子束的检查技术，通过该技术，建立了不依赖于操作者的经验来设定用于最佳地对被检查物体进行充电的条件的方法以及比以往更高的缺陷检测效率的电压对比图像 可以获得。 检查方法包括以下步骤：利用初级带电粒子束扫描其上形成有特定图案的基板的表面上的区域，检测从该区域发射的二次电子的信号，从检测到的信号形成该区域的图像，以及 从图像生成直方图。 每当改变带电粒子束照射的条件时，都执行所有这些步骤。 当直方图中出现两个或多个单独的峰时，直方图被确定为检查的最佳条件，并且基于在该条件下获得的图像进行检查。

公开(公告)号：US20060243908A1

公开(公告)日：2006-11-02

申请号：US11452989

申请日：2006-06-15

申请人： Hiroyuki Shinada ,  Atsuko Takafuji ,  Takanori Ninomiya ,  Yuko Sasaki ,  Mari Nozoe ,  Hisaya Murakoshi ,  Taku Ninomiya ,  Yuji Kasai ,  Hiroshi Makino ,  Yutaka Kaneko ,  Kenji Tanimoto

发明人： Hiroyuki Shinada ,  Atsuko Takafuji ,  Takanori Ninomiya ,  Yuko Sasaki ,  Mari Nozoe ,  Hisaya Murakoshi ,  Taku Ninomiya ,  Yuji Kasai ,  Hiroshi Makino ,  Yutaka Kaneko ,  Kenji Tanimoto

IPC分类号： G21K7/00

CPC分类号： G01N23/225 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： An apparatus for inspecting a sample using a scanning electron microscope includes a sample stage, a first electron-optical system to scan an electron beam of a first beam current on the sample, a second electron-optical system to scan an electron beam of a second beam current smaller than the first beam current on the sample, a mechanism to move the sample stage, a detector provided in each of the first and second electron-optical systems to detect a secondary electron. The first electron-optical system is operable in a first mode and the second electron-optical system is operable in a second mode with higher resolution than that of the first mode. In the first mode, the sample is observed while the sample stage is moved continuously, and in the second mode, the sample is observed by detecting a secondary electron using the detector while the sample stage is held stationary.

摘要翻译： 使用扫描电子显微镜检查样品的装置包括样品台，用于扫描样品上的第一束电流的电子束的第一电子 - 光学系统，用于扫描第二电子束的电子束的第二电子 - 光学系统 光束电流小于样品上的第一光束电流，移动样品台的机构，设置在每个第一和第二电子光学系统中的检测二次电子的检测器。 第一电子 - 光学系统可在第一模式中操作，并且第二电子 - 光学系统可以以比第一模式更高的分辨率在第二模式中操作。 在第一模式中，在样品台连续移动时观察样品，在第二模式中，通过在样品台保持静止时使用检测器检测二次电子来观察样品。