High density serial capacitor device and methods of making such a capacitor device
    11.
    发明授权
    High density serial capacitor device and methods of making such a capacitor device 有权
    高密度串联电容器及其制造方法

    公开(公告)号:US08809149B2

    公开(公告)日:2014-08-19

    申请号:US13712234

    申请日:2012-12-12

    CPC classification number: H01L29/66181 H01L28/60 H01L29/94

    Abstract: A serial capacitor comprised of a bottom electrode, a top electrode that is conductively coupled the bottom electrode, a middle electrode positioned between the bottom and top electrode, a lower dielectric layer positioned between the bottom and middle electrodes, and an upper dielectric layer positioned between the middle and the electrodes. A method includes forming the bottom electrode in a first layer of insulating material, forming the lower dielectric layer and the middle electrode above the bottom electrode, wherein the middle electrode is positioned in a second layer of insulating material, forming the upper dielectric layer above the middle electrode, forming an opening that exposes a portion of the bottom electrode, and forming the top electrode above the upper dielectric layer, wherein a portion of the top electrode extends through the opening and contacts the bottom electrode.

    Abstract translation: 一种串联电容器,包括底部电极,导电耦合底部电极的顶部电极,位于底部和顶部电极之间的中间电极,位于底部和中间电极之间的下部电介质层,以及位于 中间和电极。 一种方法包括在第一绝缘材料层中形成底部电极,在底部电极之上形成下部电介质层和中间电极,其中中间电极位于第二绝缘材料层中,形成上部电介质层 中间电极,形成露出所述底部电极的一部分的开口,以及在所述上部电介质层的上方形成所述顶部电极,其中所述顶部电极的一部分延伸穿过所述开口并接触所述底部电极。

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