公开(公告)号：US20140252617A1

公开(公告)日：2014-09-11

申请号：US13786627

申请日：2013-03-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Errol Todd RYAN ,  Xunyuan Zhang

IPC: H01L21/768 ,  H01L23/482

CPC classification number: H01L21/76843 ,  H01L21/76814 ,  H01L21/76826 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A process of modulating the thickness of a barrier layer deposited on the sidewalls and floor of a recessed feature in a semiconductor substrate is disclosed. The process includes altering the surface of the conductive feature on which the barrier layer is deposited by annealing in a reducing atmosphere and optionally additionally, silylating the dielectric surface that forms the sidewalls of the recessed feature.

Abstract translation: 公开了一种调制沉积在半导体衬底中凹陷特征的侧壁和底板上的阻挡层的厚度的工艺。 该方法包括通过在还原气氛中进行退火来改变其上沉积阻挡层的导电特征的表面，以及任选地另外地使形成凹陷特征的侧壁的电介质表面甲硅烷基化。