公开(公告)号：US20140353795A1

公开(公告)日：2014-12-04

申请号：US13904626

申请日：2013-05-29

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Wei Hua Tong ,  Huang Liu ,  HongLiang Shen ,  Jin Ping Liu ,  Seung Kim

IPC: H01L21/762 ,  H01L29/06

CPC classification number: H01L21/76224 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31155 ,  H01L29/66795 ,  H01L29/785

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes etching an enhanced high-aspect-ratio process (eHARP) oxide fill that is disposed in an STI trench between two adjacent fins to form a recessed eHARP oxide fill. The two adjacent fins extend from a bulk semiconductor substrate. A silicon layer is formed overlying the recessed eHARP oxide fill. The silicon layer is converted to a thermal oxide layer to further fill the STI trench with oxide material.

Abstract translation: 提供了用于制造集成电路的集成电路和方法。 在一个示例中，用于制造集成电路的方法包括蚀刻设置在两个相邻散热片之间的STI沟槽中的增强的高纵横比工艺（eHARP）氧化物填充物，以形成凹陷的eHARP氧化物填充物。 两个相邻的翅片从体半导体衬底延伸。 覆盖凹陷的eHARP氧化物填充物形成硅层。 将硅层转化为热氧化物层，以进一步用氧化物材料填充STI沟槽。